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Electron Devices, IEEE Transactions on

Issue 7 • Date July 1971

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1971 , Page(s): c1
    Save to Project icon | Request Permissions | PDF file iconPDF (328 KB)  
    Freely Available from IEEE
  • A hybrid voltage-variable capacitor

    Publication Year: 1971 , Page(s): 401 - 408
    Cited by:  Papers (2)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (656 KB)  

    A new voltage-variable tuning capacitor is described. Using conventional fabrication techniques, metal-insulator-semiconductor and p-n junction structures are combined to obtain the high voltage sensitivity and low capacitance tolerances required to tune the AM broadcast band. Other potential applications are cited. A simple theory of operation based on nonequilibrium conditions is given together ... View full abstract»

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  • Nonreciprocal millimeter-wave devices using a solid-state plasma at room temperature

    Publication Year: 1971 , Page(s): 408 - 411
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (440 KB)  

    We have demonstrated nonreciprocal millimeter-wave properties, first observed by us, in a waveguide loaded with a thin slab of n-InSb at room temperature by the construction of three kinds of nonreciprocal devices, all operating at W-band frequencies. Measurements have shown that the nonreciprocal properties previously observed at K-band are indeed maintained from the microwave to the millimeter-w... View full abstract»

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  • Radiation damage in silicon solar cells from low-energy protons

    Publication Year: 1971 , Page(s): 412 - 417
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (632 KB)  

    Recent evidence has indicated that kilovolt-energy protons are a probable cause for solar-cell array degradation in synchronous-orbit satellites. This damage can occur in the small areas of the cell that have been unprotected by the coverslip. This paper reports on solar-cell current degradation at fixed voltages in nominal 10-Ω.cm silicon solar cells with coverslips which are irradiated by 1... View full abstract»

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  • A resistive-gated IGFET tetrode

    Publication Year: 1971 , Page(s): 418 - 425
    Cited by:  Patents (10)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (824 KB)  

    Studies of the properties of a new insulated-gate field-effect tetrode which consists basically of an IGFET triode having a resistive-gate electrode with connections transverse to the source-drain dimension are described. Experimental tetrodes on silicon with nichrome gates are fabricated to demonstrate applications of the device as a mixer, an amplitude modulator, and an AGC amplifier. Theories a... View full abstract»

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  • Noise in high-gain transistors and its application to the measurement of certain transistor parameters

    Publication Year: 1971 , Page(s): 425 - 431
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (632 KB)  

    Noise performance of a high-gain transistor is presented. It is shown that both burst noise and flicker noise in high-gain transistors are not as important as those in low-gain units. At very small biases, less than 10 µA for the given transistor, the limiting noise of the transistor is dominated by the shot noise. In the higher bias region the thermal noise of the base resistance is the domi... View full abstract»

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  • LSA relaxation oscillations in a waveguide iris circuit

    Publication Year: 1971 , Page(s): 432 - 439
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (864 KB)  

    Large-signal computer simulations of GaAs LSA relaxation oscillations in an X-band waveguide iris circuit are presented. The study is focused on a particular oscillator and a realistic model of an experimental circuit is used. However, the results are typical for other LSA relaxation oscillators. Basic features of the microwave circuit, characteristic voltage and current waveshapes, frequency tuni... View full abstract»

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  • LSA relaxation oscillator principles

    Publication Year: 1971 , Page(s): 439 - 449
    Cited by:  Papers (16)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1048 KB)  

    Oversized n-GaAs diodes operating in the LSA mode with doping-to-frequency ratios in the 1-5×105s/cm3range are investigated in circuits that contain a short-circuited high impedance transmission line foreshortened to resonate the electronic parallel capacitance of the diode. By comparing computer simulations with experiments, such diodes are shown to operate in a nonsinu... View full abstract»

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  • A simple criterion for LSA oscillation

    Publication Year: 1971 , Page(s): 449
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (160 KB)  

    In the LSA oscillation mode, a transferred-electron diode behaves capacitively at any frequency. Theoretical calculations suggest that the equivalent capacitance decreases, and therefore the oscillation frequency increases, when either the bias or the temperature is increased. This is proposed as a criterion for determining whether the oscillation is of the LSA type. View full abstract»

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  • Electric field measurements in klystron cavities

    Publication Year: 1971 , Page(s): 450 - 453
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (544 KB)  

    A qualitative comparison is made between computed and measured electric fields in typical TM010klystron cavities. The computer code LALA is shown to apply effectively to cavities with offset gaps which are difficult to solve analytically, and a bead-pull technique using a highly directive perturbing needle is utilized to verify the theoretical results. The magnitude of the radial field ... View full abstract»

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  • Development of an FM pulsed Gunn oscillator at X band

    Publication Year: 1971 , Page(s): 450
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (160 KB)  

    A varactor tuned 0.5 µs pulsed Gunn oscillator produced 815 MHz of FM at X band. Both diodes are mounted between the broad sides of a short length of Q band waveguide. The evanescent TE10mode of operation has been verified. View full abstract»

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  • [Back cover]

    Publication Year: 1971 , Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego