IEEE Transactions on Electron Devices

Issue 6 • June 1971

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Displaying Results 1 - 18 of 18
  • [Front cover and table of contents]

    Publication Year: 1971, Page(s): c1
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    Freely Available from IEEE
  • Change in editorial board

    Publication Year: 1971, Page(s):337 - 338
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    First Page of the Article
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  • Noise in phototransistors

    Publication Year: 1971, Page(s):340 - 346
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    The investigation reported here presents both analytical and experimental results on the noise performance of phototransistors. The noise performance of phototransistors depends on fluctuations traceable to two main sources: 1) the random fluctuations in the rate of photon arrival; and 2) mechanisms inherent in the device such as fluctuations in the generation of free carriers, diffusion and recom... View full abstract»

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  • High frequency breakdown in diffused transistors

    Publication Year: 1971, Page(s):347 - 349
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    In addition to offering such desirable performance characteristics as very large bandwidth and appreciably high current gain, transistors manufactured by diffusion techniques possess a high frequency voltage capability that is significantly in excess of the breakdown voltage which materializes under quiescent operating conditions. This paper attributes voltage capability enhancement in diffused tr... View full abstract»

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  • Analysis of semiconductor diodes with multifrequency input signal

    Publication Year: 1971, Page(s):350 - 354
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    In this paper a closed form expression for the intermodulation output power from a semiconductor diode driven by an arbitrary number of "small-level" input signals is obtained. The effect of the intrinsic resistance of the diode material is taken into consideration through the use of the modified exponential function for the diode characteristic. It has been found that the relative harmonic distor... View full abstract»

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  • Base diffusion isolated transistors for low power integrated circuits

    Publication Year: 1971, Page(s):355 - 358
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (592 KB)

    Base diffusion isolated transistors (BDI) designed for low power, nonsaturating, integrated circuits have been fabricated. Buried collectors are unnecessary in these low power devices, resulting in structures equivalent to discrete transistors in complexity of fabrication. A low-current power supply is required for isolation purposes. Transistor characteristics differ negligibly from those of stan... View full abstract»

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  • Coupled-mode analysis for nonuniform crossed-field drift beams

    Publication Year: 1971, Page(s):359 - 364
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    Coupled-mode theory is used to describe the propagation of waves on a nonuniform crossed-field beam in a drift region. The nonuniformity considered in this paper is due to potential variation along the beam. Numercial solutions are obtained for the normal-mode amplitudes for two types of potential variation, namely, linear and exponential. It is shown that the coupling between the modes, which is ... View full abstract»

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  • Beam buildup in a DEMATRON amplifier

    Publication Year: 1971, Page(s):365 - 373
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    The operation of an RF triggered cold-cathode crossed-field amplifier is briefly described, and the problem is posed of how the beam builds up, since it is necessary for it to remain in an inherently debunching phase region for more than 20 successive impacts on the cathode. A partial answer is provided by numerical calculations showing that the velocity of a repeatedly impacting beam differs from... View full abstract»

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  • Design considerations for the high-power multicavity klystron

    Publication Year: 1971, Page(s):374 - 382
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (768 KB)

    A confined-flow large-signal formulation of the klystron interaction equations is presented and applied to the analysis of the multicavity klystron amplifier. The effects of cavity voltage, cavity phase, drift length, and beam parameters are studied. The two- and three-cavity amplifiers are studied in detail, and several numerical examples of four-cavity klystrons are also given. A significant sec... View full abstract»

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  • Experimental observation of accumulation mode operation of bulk Ge oscillators

    Publication Year: 1971, Page(s):383 - 384
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    Operation in the accumulation mode of Gunn-type oscillation is experimentally observed in n-type germanium samples oriented to ∠100∠, 360 µm long and with carrier concentration of 1015cm-3at 77°K. View full abstract»

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  • Initial and radiation-induced charge distribution in silicon oxynitride MIS structures

    Publication Year: 1971, Page(s):384 - 386
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    Silicon oxynitride films deposited on a HF-etched Si surface show a large fixed positive charge in the dielectric (2-3 × 10-2cm-2). This charge is shown by etch-back experiments to be located near the silicon-oxynitride interface. Negative charge is injected into the oxynitride film if a negative bias larger than 2.8 × 105V/cm is applied during irradiatio... View full abstract»

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  • Threshold voltage variations with temperature in MOS transistors

    Publication Year: 1971, Page(s):386 - 388
    Cited by:  Papers (38)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (432 KB)

    Variations with temperature in the threshold voltage of n- and p-channel MOS transistors are obtained by calculation as well as measurement, with the results comparing quite closely. The amount of voltage change per °C under normal operating conditions is found to be dependent upon the channel doping concentration. The calculations show that for either n- or p-channel devices the voltage chan... View full abstract»

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  • Noise properties of the dynamic crossed-field photomultiplier

    Publication Year: 1971, Page(s):388 - 390
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (616 KB)

    Experimentally measured noise power spectra of the dynamic crossed-field photomultiplier are presented, along with data which describe the sampling characteristics of the device. Sampling is shown to introduce excess noise of the order of 3 dB. View full abstract»

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  • Static negative resistance in Gunn effect materials with field-dependent carrier diffusion

    Publication Year: 1971, Page(s):390 - 391
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (296 KB)

    A numerical study of the equations governing the electric field in Gunn effect materials under constant bias shows that static negative resistance (SNR) can occur as a bulk effect when certain conditions regarding carrier diffusion are satisfied. This result places an important limitation on Shockley's positive conductance theorem in that a completely general extension of the theorem to cases wher... View full abstract»

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  • Temperature dependence of breakdown voltage in silicon abrupt p-n junctions

    Publication Year: 1971, Page(s):391 - 393
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    Temperature dependence of breakdown voltage in silicon abrupt p+-n junctions has been calculated using a modified Baraff theory [1]-[3] and measured experimentally from 77°K to 500°K, with substrate doping from 1015cm-3to 1018cm-3. Experimental data are in good agreement with the results of theoretical calculations. These results str... View full abstract»

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  • Thermal hysteresis and its possible effect in restricting the hot-spot-free operating range of some power transistors

    Publication Year: 1971, Page(s):393 - 394
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (432 KB)

    Studies conducted on a number of silicon power transistors indicate that for some devices a hot spot, once formed, will remain even though the power dissipation is reduced to a level at which operation was previously free of hot spots. The hot spot can be eliminated only by a significant reduction in power dissipation from the level at which the hot spot first appeared. The effect of the hot spot ... View full abstract»

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  • Enhanced harmonic response of an interdigital surface acoustic wave transducer

    Publication Year: 1971, Page(s): 395
    Cited by:  Papers (1)  |  Patents (2)
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    We describe a surface acoustic wave interdigital transducer designed to display enhanced response at harmonics of its fundamental operating frequency. The performance of the transducer compares well with predictions based on a simple model. View full abstract»

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  • [Back cover]

    Publication Year: 1971, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it