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IEEE Transactions on Electron Devices

Issue 4 • April 1971

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Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1971, Page(s): c1
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    Freely Available from IEEE
  • Electronic image storage utilizing a silicon dioxide target

    Publication Year: 1971, Page(s):229 - 235
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (984 KB)

    A new electronic charge storage tube that utilizes storage targets fabricated by selective etching of thermally grown SiO2films on silicon substrates is described. The completed targets have a storage density of 600 000 elements/cm2. The flexibility of silicon technology allows targets to be designed with continuous readout time in the range of 3 to 30 min, with a correspondi... View full abstract»

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  • The exact low-frequency capacitance-voltage characteristics of metal-oxide-semiconductor (MOS) and semiconductor-insulator-semiconductor (SIS) structures

    Publication Year: 1971, Page(s):235 - 242
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    Accurate low-frequency MOS (metal-oxide-semiconductor) and SIS (semiconductor-insulator-semiconductor) C-V curves are found by solving Poisson's equation in the bulk semiconductor using regions of analytic solution joined by numerical solutions of specified accuracy. The technique uses the full Fermi function for the electron, hole, and impurity bands; thus valid results can now be obtained for pa... View full abstract»

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  • Base transport factor calculations for transistors with complementary error function and Gaussian base doping profiles

    Publication Year: 1971, Page(s):243 - 248
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    By taking account of the carrier mobility degradation at high impurity concentrations, the high-frequency base transport factor of an n-p-n germanium base transistor was computed numerically for different base doping levels. The doping profiles under consideration were Gaussian and complementary error functions. The base doping level adjacent to the emitter was optimized for minimum base transit t... View full abstract»

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  • Gate protection of MIS devices

    Publication Year: 1971, Page(s):249 - 257
    Cited by:  Papers (16)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (896 KB)

    Gate shorts caused by electrical breakdown of the gate dielectric are a major yield and reliability problem for MOS transistors and integrated circuits. Diodes or diffused resistors with breakdown voltages of about 40 V can be used to protect the gate from high voltage transients or static discharges. This paper provides a uniform approach to gate protection. It is shown theoretically that in orde... View full abstract»

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  • Analysis of electrostatic small-angle deflection

    Publication Year: 1971, Page(s):258 - 274
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1040 KB)

    Electron beam aberrations resulting from deflection by two sets of similar, mutally perpendicular electrostatic deflectors have been studied. The analysis is applicable to the cases where the beam can be treated as a collection of noninteracting individual electrons deflected through a small angle by spatially smooth fields. The analysis shows that, with the types of electrostatic deflectors commo... View full abstract»

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  • Authors' reply

    Publication Year: 1971, Page(s): 275
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    First Page of the Article
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  • Comments on "Desing of an electrooptic light valve projection display"

    Publication Year: 1971, Page(s): 275
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (60 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1971, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it