IEEE Transactions on Electron Devices

Issue 3 • March 1971

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1971, Page(s): c1
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    Freely Available from IEEE
  • The effect of injecting contacts on avalanche diode performance

    Publication Year: 1971, Page(s):141 - 146
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    Metal-semiconductor contact injection on the junction side of diffused-mesa avalanche diodes has been found to have a significant effect on the performance of these diodes as oscillators. A minority carrier injection ratio of 6 percent reduces the efficiency of what would be 9 percent efficient diodes to less than 1 percent and increases the FM noise by a factor of 2 as tested in a 6-GHz oscillato... View full abstract»

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  • Circuit effects in second-harmonic tuning of IMPATT diodes

    Publication Year: 1971, Page(s):147 - 150
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    Two-frequency operation of IMPATT diodes is examined in this paper on a conceptual basis. It is shown that a simple interpretation of the "single-frequency" admittances of the diode may be made. An equivalent circuit is presented which shows that the effect of second-harmonic tuning is to introduce a nonlinear resonance into the fundamental input admittance. This occurs when the external circuit a... View full abstract»

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  • A refined step-recovery technique for measuring minority carrier lifetimes and related parameters in asymmetric p-n junction diodes

    Publication Year: 1971, Page(s):151 - 158
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (944 KB)

    Minority-carrier lifetime in a forward-biased asymmetrical p-n junction diode can be measured by observing the time response of the diode to a sudden reversing step voltage. An approximate but general theory for p-n junctions with almost arbitrary impurity gradients is developed, and its results are within about 25 percent of those previously obtained for the special cases of ideal step and expone... View full abstract»

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  • Temperature in Gunn diodes with inhomogeneous power dissipation

    Publication Year: 1971, Page(s):158 - 165
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    The output power of Gunn oscillators is limited by the increased temperature which affects the velocity-field curve and which may also permanently damage the diode or the metal contacts. The behavior of these oscillators indicates that the dissipation power density is more or less inhomogeneous, depending on the kind of oscillation mode. The present paper makes use of simple models of the dipole d... View full abstract»

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  • Bulk degradation of GaP red LEDs

    Publication Year: 1971, Page(s):166 - 170
    Cited by:  Papers (34)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (552 KB)

    The external quantum efficiency of GaP red light-emitting diodes (LEDs) degrades under forward-biased operation. The degradation is a complex phenomenon which in the long run is dominated by changes in the bulk semiconductor. This paper is restricted to the discussion of bulk degradation. The symptoms of the degradation are: 1) for a given forward current, the activation energy of the degradation ... View full abstract»

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  • Combined doping and geometry effects on transferred-electron bulk instabilities

    Publication Year: 1971, Page(s):170 - 174
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    The behavior of transferred-electron bulk negative differential conductivity devices with nonuniform geometries and various doping profiles is analyzed. Computer solutions were obtained for appropriate transport equations generalized by a scheme to simulate arbitrary areal variation. The solutions show that the effects of doping and geometrical nonuniformities on domain dynamics are similar. The p... View full abstract»

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  • A note on the semiconductor current flow equations

    Publication Year: 1971, Page(s):175 - 178
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    The current flow equations for nondegenerate and degenerate semiconductors at low temperature are discussed in terms of the Boltzmann transport equation. It is shown that the diffusion current in an inhomogeneous but isotropic semiconductor must be expressed as q.D(r). ∇n(r) where n(r) is the carrier (electron) concentration and D(r) is a spatially varying diffusion "constant." Some formulas... View full abstract»

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  • Transition region capacitance of diffused p-n junctions

    Publication Year: 1971, Page(s):178 - 195
    Cited by:  Papers (32)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1512 KB)

    The classical capacitance-voltage relations based on abrupt space-charge edge approximations, while adequate at large reverse bias, do not adequately describe the capacitance near zero bias. This paper presents explicit capacitance-voltage relations valid near zero bias for linearly graded and exponential-constant profiles. For linearly graded junctions, the intercept in a 1/C3versus vo... View full abstract»

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  • Lumped modeling of optical generation in nonuniformly doped semiconductors

    Publication Year: 1971, Page(s):195 - 199
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (480 KB)

    When carrier density is normalized and recombination neglected, a single transport element accounts for both drift and diffusion. Optical generation is modeled by discrete current sources, and expressions for lumped elements are obtained in terms of integrals of the doping profile. Good physical intuition with respect to the effect of the profile on photocurrent transport is obtained, and analytic... View full abstract»

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  • A small-signal calculation for one-dimensional transistors

    Publication Year: 1971, Page(s):200 - 210
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    A computation method to obtain an exact small-signal solution of a one-dimensional transistor model for high-frequency operation is presented under the assumption of negligible bulk recombination effect. Basis for the small-signal calculation is 1) a dc solution at the operating point under consideration, 2) trial potentials (electrostatic potential and quasi-Fermi potentials for electrons and hol... View full abstract»

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  • Theory of frequency multiplication including transition loss

    Publication Year: 1971, Page(s):210 - 214
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    A theory for frequency multipliers with charge storage diodes is developed including the effects of finite transition time. The transition loss due to the charge storage diode turn-off transient is taken into account with a charge-controlled diode model which requires only limited mathematical effort and has readily measurable characteristics. Furthermore, it very well describes the performance of... View full abstract»

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  • Space-charge waves of periodic-electrostatically focused electron beams

    Publication Year: 1971, Page(s):214 - 220
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    Space-charge wave propagation for periodic-electrostatically focused electron beams with nonuniform radial beam density distributions is the subject of this paper. The dispersion equation is obtained by solving a differential equation for the ac electric potential inside the electron beam and by matching the solution at the boundaries. An approximate analytic solution and a digital computer treatm... View full abstract»

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  • Spectra of short, locked magnetron pulses

    Publication Year: 1971, Page(s):221 - 223
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    A theoretical explanation is given for the observed difference between the frequency at which the peak of the spectrum of a train of short, locked magnetron pulses occurs and the frequency of the CW locking signal. View full abstract»

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  • [Back cover]

    Publication Year: 1971, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Politecnico di Torino,
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