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IEEE Transactions on Electron Devices

Issue 2 • Date Feb. 1971

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1971, Page(s): c1
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    Freely Available from IEEE
  • Microwave-biased photoconductive AM light detector

    Publication Year: 1971, Page(s):81 - 87
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    A resonant microwave cavity loaded with photoconducting material is considered. The change in the power reflected from the cavity is derived in terms of the cavity-coupling coefficient and an interaction parameter involving the photoconductor parameters and the incident light signal amplitude. The effects of cavity coupling and high-frequency roll-off due to the photoconductor response are discuss... View full abstract»

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  • Transit-time negative conductance in GaAs bulk-effect diodes

    Publication Year: 1971, Page(s):88 - 93
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB)

    It is well known that GaAs bulk-effect devices generate RF power by velocity-modulating the charge carriers. We have found through a small-signal analysis and computer simulations that RF power could also be generated by density modulation of the carriers if the diode is subcritically doped ( n_{0}L< 5\times10^{11} cm-2) and carrier injection at t... View full abstract»

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  • Thermal breakdown delay time in silicon p-n junctions

    Publication Year: 1971, Page(s):94 - 97
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    The geometric effects on the applied power dependence of the delay time preceding thermal breakdown in p-n junctions are predicted in terms of a linear heat-flow model and temperature-dependent reverse current. Measurements of the delay time on silicon planar p-n junctions of various areas are compared to the predictions and found to be in reasonable accord. View full abstract»

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  • Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies

    Publication Year: 1971, Page(s):97 - 104
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier velocity saturation is estimated. The noise parameters are calculated by taking into account the influence of parasitic resistances. Measured and calculated noise parameters show good agreement in the frequency range 2-8 GHz. View full abstract»

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  • Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrode

    Publication Year: 1971, Page(s):105 - 109
    Cited by:  Papers (7)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    A new structure is given for the n-channel stacked gate MOS tetrode which consists of a polycrystalline silicon buried control gate and thermally grown oxide for the offset gate insulator. As a result of the large band-bending in the offset gate depletion region of an operating tetrode, some drain current electrons surmount the Si-SiO2energy barrier and are injected into the oxide. Sinc... View full abstract»

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  • Design considerations of hyperabrupt varactor diodes

    Publication Year: 1971, Page(s):109 - 115
    Cited by:  Papers (6)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    This paper describes the design calculations and fabrication techniques used to produce hyperabrupt varactor diodes. The computation consists of determining, the doping profile, the capacitance as a function of applied voltage, the breakdown voltage, and the series resistance; allowance is made for the nonlinear variation of mobility with doping density. Fabrication of the retrograded region was a... View full abstract»

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  • Electrical resistivity of noble gas pulsed discharges

    Publication Year: 1971, Page(s):115 - 118
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    The electrical resistivity of pulsed discharges in flash-tubes using noble gases is treated in a simple manner. Relations between resistivity and electric field E and current density j are given. It is shown that electrical resistivity in pulsed discharges is an inverse function of j ... View full abstract»

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  • The printicon: A new character-generating monoscope for use in visual display systems

    Publication Year: 1971, Page(s):118 - 123
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB)

    A brief review of existing means of generating charactors for visual display reveals certain deficiencies. A new character-generating monoscope has been developed to overcome these problems. Its novel all-electrostatic electron-optical system produces, at high speed, well-defined images of the target symbols which can be designed to customer requirements. The tube is cheap, and its low voltage and... View full abstract»

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  • Design and demonstration of a klystron with 62 percent efficiency

    Publication Year: 1971, Page(s):124 - 133
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1096 KB)

    Extensive design optimization studies on a prototype series of klystrons have been carried out using a digital computer simulation, Five parameters were investigated for their effect on efficiency: 1) penultimate cavity tuning; 2) pre-penultimate cavity tuning; 3) beam perveance; 4) pre-pre-penultimate cavity tuning; and 5) output gap transit angle, These studies indicate that the power conversion... View full abstract»

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  • A transversely magnetized microwave traveling-wave photodetector

    Publication Year: 1971, Page(s):134 - 135
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    Improved sensitivity is obtained by transversely magnetizing a photodetector comprising a section of waveguide partially loaded with a bulk photoconductor. The device performance can be predicted quantitatively with an approximation procedure that includes the effects of partial loading, magnetic field, and non-uniform (exponential) conductivity. View full abstract»

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  • [Back cover]

    Publication Year: 1971, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it