IEEE Transactions on Electron Devices

Issue 1 • Jan. 1971

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Displaying Results 1 - 17 of 17
  • [Front cover and table of contents]

    Publication Year: 1971, Page(s): c1
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    Freely Available from IEEE
  • Change in editorial board

    Publication Year: 1971, Page(s):1 - 2
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB)

    First Page of the Article
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  • A cyclotron-wave rectifier for S-band and X-band

    Publication Year: 1971, Page(s):3 - 11
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    A device for converting microwave power into either dc power or low-frequency ac power has been investigated both theoretically and experimentally. Rotational energy is stored in an electron beam by a Cuccia coupler, then converted to longitudinal energy by interaction with a space-dependent dc magnetic field, and finally recovered as electric energy by a depressed collector. A simple kinematic an... View full abstract»

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  • Characteristics of multisignal and noise-modulated high-power microwave amplifiers

    Publication Year: 1971, Page(s):11 - 34
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2368 KB)

    As a result of the inherent nonlinearity of the beam-circuit wave interaction process in high-power microwave amplifiers, there are harmonics generated when one signal is applied to the input and both harmonics and intermodulation products are generated when multiple component signals are applied. The effect of these generated signals is to reduce the available power levels of the fundamental sign... View full abstract»

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  • Design considerations for improved efficiency characteristics of M-type backward-wave oscillators

    Publication Year: 1971, Page(s):35 - 41
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    It has been observed that under certain conditions the electronic efficiency of M-type backward-wave oscillations (M-BWO's) can deteriorate appreciably. The deterioration in the efficiency of M-BWO's has been investigated from the viewpoint of cyclotron-wave interactions. It has been found that although the main cause of the deterioration is the interaction of the slow cyclotron wave with one of t... View full abstract»

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  • Production of 1.3-mm waves with waveguide magnetrons

    Publication Year: 1971, Page(s):42 - 45
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    The authors succeeded in producing continuous extremely short millimeter waves with waveguide magnetrons [1] of a special type, which will be called "modified waveguide magnetrons" [2] in order to distinguish them from conventional waveguide magnetrons. These magnetrons are very simple in construction and have stability of performance similar to conventional designs. Moreover, the wavelengths of t... View full abstract»

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  • A new technology for high-power IC

    Publication Year: 1971, Page(s):45 - 50
    Cited by:  Papers (7)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    The paper describes a new fabrication technology for a monolithic high-power linear IC. It is based on a novel process for controlling the epitaxial growth of single crystal regions and very fine polycrystalline regions on an IC substrate essentially in accordance with the specified mapping of the IC pattern. Polycrystalline regions are used in areas of isolation and collector lead paths which mus... View full abstract»

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  • Semiconductor impurity analysis from low-frequency noise spectra

    Publication Year: 1971, Page(s):50 - 53
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    The usefulness of material for semiconductor devices can be degraded by the presence of deep impurity levels or traps which are often difficult to detect. The equations necessary for using the noise emitted by a uniform semiconductor when biased with a small dc current to find the energy, degeneracy factor, density, and time constants of such a deep level are derived. The theory was verified by an... View full abstract»

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  • Si3N4-masked thermally oxidized post-diffused mesa process (SIMTOP)

    Publication Year: 1971, Page(s):54 - 57
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    This paper describes a new process for the fabricating of semiconductor devices, using a silicon nitride (Si3N4-masked thermally oxidized post-diffused mesa process (SIMTOP), which combines the advantages of both the mesa and planar processes while eliminating the disadvantages peculiar to each. An IMPATT diode was fabricated as a model vehicle for the process and the physica... View full abstract»

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  • Avalanche ionization rates measured in silicon and germanium at low electric fields

    Publication Year: 1971, Page(s):58 - 66
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (967 KB)

    Ionization rates in semiconductors can be measured at low values of electric field using a new method involving a field-effect transistor (FET) structure which offers greater sensitivity than reverse biased p-n junction diode methods. Carriers of only one polarity cause ionization in the FET and no correction is required for ionization caused by carriers of the opposite polarity. Since secondary c... View full abstract»

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  • Electric field distribution for a surface

    Publication Year: 1971, Page(s):66 - 69
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    A closed form expression is obtained for the electric field distribution that results when a voltage is impressed on a system of surface wave interdigital electrodes. The conventional assumptions of weak piezoelectric coupling and of electrodes long compared with acoustic wavelength are made. Equivalence with previously reported results derived by a spatial harmonics method is explicitly demonstra... View full abstract»

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  • LSA operation of a gallium arsenide device in microstrip

    Publication Year: 1971, Page(s):69 - 70
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Two LSA microstrip oscillators were made. The poor performance of the first oscillator was found by a time-domain computer simulation to be caused by poor circuit design and the effects of the LSA device package. A second circuit was constructed which eliminated the device package and used a more straightforward design. Thirty watts of RF power was generated in the second circuit at a frequency of... View full abstract»

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  • Generation and the characteristics of current pulses from alloyed-type low-conductivity bulk GaAs

    Publication Year: 1971, Page(s):70 - 72
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (912 KB)

    Current pulses with frequencies in the vicinity of 1 kHz were observed in low-conductivity copper-doped GaAs. The coherent current pulses were obtained by applying an ac half-sinusoid voltage to low-conductivity bulk GaAs samples with indium ohmic contacts. The repetition rate increased as the applied voltage was increased. Illumination of the specimen surface or change in ambient temperature had ... View full abstract»

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  • Comments on "A rapid evaluation technique for functional Gunn diodes"

    Publication Year: 1971, Page(s):72 - 73
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (231 KB)

    In a recent paper, Larrabee et al. proposed the magnetoresistance measurement for a quick determination of electron mobility in a functional Gunn diode. It is pointed out in this correspondence that the formula used in the paper is applicable only to extremely thin Gunn diodes where the length-to-width ratio is negligibly small. It is also shown how to obtain the correct value of the mobility by t... View full abstract»

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  • The integral for multiplication factor M with single or equal ionization coefficients

    Publication Year: 1971, Page(s):73 - 74
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (225 KB)

    General expressions for the multiplication factorMare derived for both step and linear graded junctions by integrating the common form for the ionization coefficientalpha(E)= alpha_{infin}exp(-b/E). Equal ionization coefficients are assumed. The results are compared with a commonly used approximation. View full abstract»

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  • Comments on hot carrier noise in field-effect transistors

    Publication Year: 1971, Page(s):74 - 75
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (239 KB)

    Taking into account more rigorously such high field effects as velocity saturation and an increasing free carrier temperature, a new derivation is presented for the output noise of the field-effect transistor. It is shown that for devices with a short channel and a high saturation voltage the equivalent noise resistance can increase considerably above the low field value. View full abstract»

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  • [Back cover]

    Publication Year: 1971, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it