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Electron Devices, IEEE Transactions on

Issue 12 • Date Dec. 1970

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1970 , Page(s): c1
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  • Announcement

    Publication Year: 1970 , Page(s): 1021
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    First Page of the Article
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  • Deflection defocusing effects in cathode-ray tubes at large deflection angles

    Publication Year: 1970 , Page(s): 1022 - 1031
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (776 KB)  

    In modern color television tubes, an array of three electron beams, converging at a target, is deflected through angles of up to 55°. The conventional, small-angle deflection theory cannot be extended to deal with the convergence defects of deflection fields at such large angles since certain series expansions, basic to that theory, diverge at angles larger than 45°. A new approach to the theoretical treatment of deflection defocusing effects in cathode-ray tubes, based on the application of the theory of "focusing fields with arbitrary curved optical axes" leads to a quantitative description of deflection defects at any angle of deflection. Deflection astigmatism and curvature of field will appear in this approach as paraxial effects, while deflection coma will be identified as a second-order aberration. The mathematical treatment presented, here is suitable for numerical evaluation of deflection fields and their defects with the aid of computers. View full abstract»

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  • Starting conditions for backward-wave oscillators with large loss and large space charge

    Publication Year: 1970 , Page(s): 1032 - 1039
    Cited by:  Papers (8)
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    Starting conditions of backward-wave oscillators are obtained both analytically and numerically for large loss and large space charge. Analytical results are obtained for zero loss and space charge up to infinity and for zero space charge and loss up to infinity. Computer results are carried out for circuit loss up to 225 dB and space charge up to QC = 25. An analytical equation is developed for computing starting conditions for large loss approaching infinite values and for large space charge approaching infinite values. Since the starting C is proportional to the loss per wavelength, large values of loss in a backward-wave oscillator can prevent oscillation from occurring unless the current can be made sufficiently large; i.e., the starting C is independent of length. View full abstract»

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  • X-band gas-tube pulsed attenuator for maser protection

    Publication Year: 1970 , Page(s): 1040 - 1047
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    An investigation has been completed of the use of a gas-tube attenuator to protect a maser from saturation when used in a pulsed radar. A typical X-band unit will provide well over 100 dB isolation while introducing only 0.05 dB attenuation in the receiver line. Characteristics including recovery time, life, firing delay, striations, leakage power, tube voltage, etc., as a function of current and gas fill for xenon and neon are presented. These attenuators have been used successfully in two different radar systems over a period of several years. View full abstract»

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  • Analysis of the LSA mode including effects of space charge and intervalley transfer time

    Publication Year: 1970 , Page(s): 1048 - 1060
    Cited by:  Papers (8)
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    A theoretical analysis is presented of the effects of intervalley transfer time, travel of an accumulation layer, and dipole domain growth upon LSA mode operation of GaAs devices. A modified two-valley model is used with energy relaxiation effects included to analyze a crystal divided into an active section (above threshold electric field) and a passive section (below threshold field) by an accumulation layer. Domain growth occurs in the active section. Specific results are given for crystal lengths of 20 µm and 100 µm and the influence of crystal parameters and operating conditions upon the conversion efficiency and devices RF admittance is discussed. View full abstract»

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  • Circuit considerations in the design of wide-band tunable transferred-electron oscillators

    Publication Year: 1970 , Page(s): 1060 - 1067
    Cited by:  Papers (10)
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    A theoretical and experimental investigation into a particular type of tunable microwave circuit commonly used for LSA operation of GaAs layers is reported. It is shown that certain effects which often impose severe limitations on the performance of wide-band transferred-electron oscillators (TEO's) such as frequency saturation, fixed frequency operation, resonance switching, deterioration of efficiency, and high FM noise may, in many instances, be attributed directly to the interaction of the equivalent circuit of the encapsulated device and the microwave circuit. The theoretical result are used to deduce design criteria for a J-band (11 to 19 GHz) waveguide circuit in order to optimize the performance of the oscillator with respect to tunning range, efficiency, and FM noise performance. In particular the results of the investigation indicats that, for continuous tuning combined with low FM noise over the tuning range, the parallel resonant frequency associated with the encapsulated device should be less than the minimum operating frequency, and that, by suitable design of the oscillator, frequency deviation due to fluctuation in the magnitude of the device capacitance can, in principle, be reduced to zero over a narrow bandwidth. View full abstract»

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  • Experimental analysis for the large-amplitude high-efficiency mode of oscillation with Si avalanche diodes

    Publication Year: 1970 , Page(s): 1067 - 1076
    Cited by:  Papers (9)
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    This paper presents the result of an investigation aiming to clarify the large-amplitude oscillation mechanisms of a Si avalanche diode with high efficiency, a part of which was already reported in [6], by varying circuit conditons and the shapes of applied voltage pulses. Applying a pulse resistive, transient voltage across and current through the diode have been observed by varying the rise time of the source voltage. As a result, variations of these waveforms have been revealed with decreasing the rise time and if the slope of the diode voltage at the breakdown is large than 100 V/ns, damping oscillation has been observed with the amplitude increasing proportionally to this slope. This damping oscillation plays a significant role in initiating the stable large-amplitude oscillation. Using a resonant cavity, voltage and current waveforms at various points have been observed and analyzed for various cavity lengths and applied source voltages. The analysis shows that the voltage wave-form across the diode coincides with the superimposed waveforms of the wave incident on and the wave reflected from the diode, the latter being delayed about 60 ps with respect to the former. This oscillation mechanism is considered to be very close to the TRAPATT oscillation. The details of experimental results, oscillation characteristics, and their analyses are explained. View full abstract»

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  • Advantages of vapor-plated phosphosilicate films in large-scale integrated circuit arrays

    Publication Year: 1970 , Page(s): 1077 - 1083
    Cited by:  Papers (6)  |  Patents (2)
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    The use of low temperature phosphosilicate glass (PSG) films which are compatible with aluminum-metallized integrated circuits, has been found to possess significant merits in LSI applications. PSG used on integrated circuits fabricated in production has resulted in improvements in fabrication yields and device performance and reliability. The properties and effects of PSG which contribute to these benefits have been determined and studied. They include hardness, ability to getter alkali ions, effect on immobile charge density, ability to quench fast states, low stress, resistance to cracking, low pinhole density, and effect on electromigration. The deposition system used to deposit the PSG films and the phosphorus content of the films are also discussed. View full abstract»

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  • A novel transparent electrode process

    Publication Year: 1970 , Page(s): 1083 - 1085
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    A novel process for the formation of thin-film, optical-quality conductive electrodes for use in electrophoretic deposition of high-resolution phosphor screens is described. The thin-film metal electrodes can be removed from under the phosphor either chemically or by vacuum sublimation leaving a completely transparent interface. The metal electrodes show good adherence to substrates and are low in pinhole density. High condensation rates are obtained through the use of nucleation techniques. View full abstract»

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  • A photoconductive sensor for card readers

    Publication Year: 1970 , Page(s): 1086 - 1087
    Cited by:  Papers (1)
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    An experimental thin-film CdS:CdSe photoconductordiode array having 80 × 12 elements has been fabricated by vacuum deposition on a single 4 × 8 inch substrate. Element spacing is the same as the hole positions in a standard computer punched card. Possible applications include static and dynamic card readers. View full abstract»

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  • On the calculation of doping profiles from C(V) measurements on two-sided junctions

    Publication Year: 1970 , Page(s): 1087 - 1088
    Cited by:  Papers (2)
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    It is shown that for a two-sided junction, the doping profile can only be uniquely determined from C(V) measurements if the doping profile is known on one side. Expressions are derived which enable the calculation of the complete doping profile from C(V) measurements and the knowledge of the doping profile on one side. View full abstract»

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  • Differential drain resistance of field-effect transistors beyond pinch-off: A comparison between theory and experiment

    Publication Year: 1970 , Page(s): 1088 - 1089
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    The theoretical computation of the drain characteristics of junction field-effect transistors reported by Kim and Yang has been compared with the experimental measurements in terms of the differential drain resistance. Good agreement between the theory and experiment has been found. View full abstract»

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  • A technique for measuring the dispersion characteristics in slow-wave circuits containing materials with nonreciprocal RF properties

    Publication Year: 1970 , Page(s): 1089 - 1090
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    A traveling wave technique to measure the dispersion charateristics of slow-wave circuits is described which uses a sensitive phase measurement system and negates the requirment for shorting the circuit under test. Because of the elimination of the short and because the sensitivity of the measurement does not require strong coupling to the circuit fields, errors due to the creation of spurious modes are minimized. Comparison of wavelength measurements using this system with those of previous techniques show excellent agreement. View full abstract»

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  • [Back cover]

    Publication Year: 1970 , Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego