IEEE Transactions on Electron Devices

Issue 11 • Nov. 1970

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • Electron-optical masking of semiconductor structures

    Publication Year: 1970, Page(s):961 - 964
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (464 KB)

    Electron-optical techniques were employed to fabricate planar silicon transistors having a 1-micron strip width and a combined dimensional and registration tolerance of 1000 Å. A new electron-sensitive positive resist was used to define a conventional oxide diffusion mask. The exposure equipment is described and electrical parameters of the complete device are given. View full abstract»

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  • Failure analysis of evaporated metal interconnections at contact windows

    Publication Year: 1970, Page(s):964 - 970
    Cited by:  Papers (8)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (880 KB)

    An analysis of the open metallization problem at oxide steps at the surface of planar devices is described. This failure mechanism is essentially based upon the presence of a film discontinuity which grows during the evaporation process at the interface of coarse and dense crystal structures of the evaporated film. The growth rate of the coarse surface is somewhat larger than that of the normal su... View full abstract»

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  • Filamentary injection currents in semi-insulating GaAs

    Publication Year: 1970, Page(s):971 - 975
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (472 KB)

    Current filaments have been observed in the post-breakdown region of two-carrier space-charge-limted diodes in silicon and gallium arsenide. An analytical expression for the radial distribution of current in such filaments has been derived using an appropriate model for the total current-electric field problem. This derived expression is solved numerically for semi-insulating GaAs. These analytica... View full abstract»

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  • Down-converters using Schottky-barrier diodes

    Publication Year: 1970, Page(s):975 - 983
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (864 KB)

    The analysis of noise in down-converters, in which signal and image ports are equally terminated, is extended to include the effect of a nonlinear junction capacitance. The theory is applied to Schottky-barrier diodes, which are represented by a constant resistance in series with a parallel combination of a nonlinear conductance and nonlinear capacitance pumped in phase. Using numerical optimizati... View full abstract»

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  • Frequency scaling of IMPATT diodes

    Publication Year: 1970, Page(s):983 - 986
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (432 KB)

    A simple set of frequency scaling laws for the basic characteristics of IMPATT diodes is derived. View full abstract»

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  • High-speed shutter tubes of biplanar and proximity focusing design: Improvements through introduction of a microchannel wafer

    Publication Year: 1970, Page(s):986 - 989
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (664 KB)

    Characteristics of several diode shutter tubes, useful for exposure time of 1 ns to 500 ns, are given. Addition of a microchannel electron multiplier between photocathode and screen makes possible higher and adjustable gain while retaining the advantages of high speed, small size, and high resolution. The transfer technique for making the photocathode and positioning it close to the microchannel w... View full abstract»

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  • Target limitation of resolution and signal/noise in mesh storage tubes

    Publication Year: 1970, Page(s):989 - 998
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (859 KB)

    By assuming that the mesh holes are square and that the electron beams are Gaussian, both the sine-wave and the cross-scan response may be calculated for a mesh-type storage tube. The sine-wave response is the product of a function of the formsin x/x. from the mesh holes and a Gaussian function from the electron beams. Cross-scan response always exceeds sine-wave response; the resolutio... View full abstract»

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  • The effect of potential beam energy on the performance of linear beam devices

    Publication Year: 1970, Page(s):999 - 1009
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (882 KB)

    The potential energy stored in a bunched electron beam is calculated using analytical and numerical methods. The ratio of stored potential energy to the total beam energyW_{p}/W_{0}increases rapidly with the degree of bunching and with decreasing beam filling factorb/a.W_{p}/W_{0}is proportional to the beam perveance and independent of the beam voltage, as long as ... View full abstract»

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  • Dielectric relaxation in Si—SiO2—Cr structures

    Publication Year: 1970, Page(s):1010 - 1011
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (240 KB)

    The dielectric behavior of thermally grown SiO2was examined using Si-SiO2-Cr structures. The relaxation spectrum exhibits a time dependence indicative of diminishing charge-carrier concentration. The relaxation process is characterized by activation energies of 29-32 kcal/mole; this, together with the considerably higher loss measured in specimens contaminated with Na2 View full abstract»

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  • Transmission-line analog of electron stream in solid-state plasmas

    Publication Year: 1970, Page(s):1011 - 1013
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (288 KB)

    Transmission-line analogs of the space-charge waves and the electroacoustic waves propagation in solid-state plasmas have been developed. Normal modes have also been defined. These transmission analogs provide the base for description of wave interactions in solid-state plasma by coupled-mode theory. View full abstract»

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  • An analysis of the heat pipe as a heat sink for solid-state RF sources

    Publication Year: 1970, Page(s):1013 - 1014
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (232 KB)

    Equations are developed for determining the temperature of a steady-state power flux source incident on the heat pipe as a function of the pipe wall thickness. The analysis shows the heat pipe to be no better than a semi-infinite heat sink operating at an elevated temperature for practical solid-state RF devices having power flux densities of 104-106watts/cm2. View full abstract»

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  • Comments on the bibliography on field-effect transistors

    Publication Year: 1970, Page(s): 1014
    Cited by:  Papers (1)
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  • [Back cover]

    Publication Year: 1970, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it