IEEE Transactions on Electron Devices

Issue 7 • July 1970

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • Ultrahigh-speed microchannel photomultiplier

    Publication Year: 1970, Page(s):493 - 495
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    Use of a microchannel-water electron multiplier makes possible a new, compact photomultiplier with time-resolution capabilities better than can be obtained from classical photomultipliers using cascaded dynode structures. The small thickness of the wafer, together with proximity focusing in the electron optics of the input and output of the wafer, results in reduction of the electron transit-time ... View full abstract»

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  • Low-frequency excess noise in metal—Silicon Schottky barrier diodes

    Publication Year: 1970, Page(s):496 - 506
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (960 KB)

    Theoretical models for the generation-recombination noise and trapping noise in metal-semiconductor Schottky barrier diodes are developed. Low-frequency excess noise in Schottky barrier diodes is found to be dominated by the modulation of the barrier height φB caused by fluctuation in the charge state of traps or generation-recombination centers. This noise mechanism does not occur in p-n jun... View full abstract»

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  • Position-sensitive Schottky barrier photodiodes: Time-dependent signals and background saturation effects

    Publication Year: 1970, Page(s):507 - 513
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    Performance of position-sensitive Schottky barrier gold-silicon photodiodes in the presence of uniform radiant background levels is investigated. Proper conditions of reverse bias and external circuit loading are shown to reduce the background saturation effects while maintaining nearly constant responsivity. The response of the lateral photovoltaic photodetector to CW-modulated and short pulse-wi... View full abstract»

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  • Computer calculation of silicon avalanche diodes

    Publication Year: 1970, Page(s):514 - 519
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (573 KB)

    The efficiency η and output power P per unit area were computed for silicon p-n-n+avalanche diodes having an active region of 5 microns. The condition for making both η andPmaximum is that the field at the n-n+interface generated by impurity and bias voltage is about one fourth of that at the junction under oscillation conditions. The maximum η and View full abstract»

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  • Carrier trapping and recombination in avalanche diodes

    Publication Year: 1970, Page(s):520 - 526
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    The differential equations describing an avalanching p+nn+junction in the presence of multiple-level carrier traps have been solved numerically for trap densities as high as two orders of magnitude greater than the n-region background doping. The results compare quantitatively with a number of past, as well as new, experimentally observed changes in avalanche microwave diode ... View full abstract»

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  • The effect of operating parameters and oscillator characteristics upon the phase angle between a locked X-band Gunn oscillator and its locking signal

    Publication Year: 1970, Page(s):527 - 533
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    Experiments have been carried out to measure the phase angle between a locked negative-resistance (Gunn) oscillator and its locking oscillator. Phase angle has been measured as a function of ambient temperature, oscillator bias voltage, locking power, and the voltage applied to a varactor tuning diode coupled into the locked oscillator. Results indicate that given a knowledge of the oscillator cha... View full abstract»

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  • An adaptive ferroelectric transformer—A solid-state analog memory device

    Publication Year: 1970, Page(s):534 - 540
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    A new solid-state adaptive (analog memory) device is described and demonstrated. The device is a flat-band electronic transformer with adaptable voltage gain; that is, the voltage gain-frequency transfer characteristic can be "set" to different values of attenuation by the application of an adapt signal and will retain that setting after the adapt signal has been removed. Ferroelectric materials a... View full abstract»

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  • Surface-wave amplification between parallel semiconductors

    Publication Year: 1970, Page(s):541 - 549
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    In the parallel arrangement of two slabs of semiconductors incorporating drifting carriers, dispersion equations governing surface-wave propagation are derived. The wave is a space-charge wave along the interface. It can be the polarization wave utilizing minority carriers. The relation is deduced from a set of transport equations and boundary conditions. The dielectric relaxation frequency, which... View full abstract»

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  • Relativistic effects in the traveling-wave amplifier

    Publication Year: 1970, Page(s):549 - 561
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1092 KB)

    A relativistically correct large-signal theory is developed for the analysis of high-power, axially symmetric traveling-wave amplifiers in order to investigate the physical phenomena involved in the interaction process. The nonlinear integro-differential system equations are developed from the Lorentz force equation, the one-dimensional equivalent circuit equation, the wave equation, and the conti... View full abstract»

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  • Large ac signal behavior of the MOS capacitor biased in inversion

    Publication Year: 1970, Page(s):561 - 562
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    The behavior of inversion-biased MOS capacitors as function of the ac signal magnitude is examined and explained. A method based on the theory developed is proposed for estimating bulk doping concentrations. View full abstract»

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  • Negative differential resistance produced by Joule heating in semiconductors

    Publication Year: 1970, Page(s):562 - 564
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    A simple analysis indicates that negative differential resistance (NDR) characteristics may be made possible by an intervalley electron-transfer process enhanced by Joule heating in semiconductors at low fields. The negative temperature coefficient of electronic mobility of semiconductors is also favorable to the achievement of NDR. View full abstract»

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  • [Back cover]

    Publication Year: 1970, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it