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IEEE Transactions on Electron Devices

Issue 6 • June 1970

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • Introduction

    Publication Year: 1970, Page(s): 441
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  • The growing use of electron beams for processing in microelectronics

    Publication Year: 1970, Page(s):442 - 445
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    Four original papers are assembled in this issue to highlight the work which is being carried out on the use of electron beams in microelectronics. A brief background description is given of the phenomena which are of interest for microelectronics. This is followed by short descriptions of the scanning electron microscope and an electron projection system. Various features of the original papers a... View full abstract»

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  • Electron beam and ion beam fabricated microwave switch

    Publication Year: 1970, Page(s):446 - 449
    Cited by:  Papers (7)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB)

    A combination of electron beam and ion beam techniques were used in conjunction with conventional planar technology to fabricate a junction field-effect microwave switch. A digital tape-controlled scanning electron beam was used to expose mask patterns in polymethyl methacrylate resist whose line widths (≤1 um) are inaccessible to conventional photolithography; ion beam sputtering was used t... View full abstract»

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  • Automatic pattern positioning of scanning electron beam exposure

    Publication Year: 1970, Page(s):450 - 457
    Cited by:  Papers (12)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (904 KB)

    When making a pattern for a solid-state device from a silicon wafer coated with photoresist by the scanning electron beam exposure technique, the positioning accuracy of the pattern is as important as its resolution and dimensional accuracy. A pattern positioning system automated by an electronic computer which is included in the electron beam exposure apparatus type JEBX-2B, is introduced and des... View full abstract»

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  • Carrier profiles and collection efficiency in Gaussian p-n junctions under electron beam bombardment

    Publication Year: 1970, Page(s):458 - 465
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    Gaussian-doped semiconductor junctions have a built-in electrostatic field E which usually varies linearly with distance from the surface. A series of solutions of the one-dimensional continuity equation for linear E field are given in terms of the confluent hypergeometric function and its limiting forms. These solutions are directly applicable to the collection of hole-electron pairs generated be... View full abstract»

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  • Fabrication of integrated circuits using the electron image projection system (ELIPS)

    Publication Year: 1970, Page(s):465 - 469
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    ELIPS is based on the use of an electron image tube principle to project large area (5-cm diameter) ultrahigh resolution (1 micron) electron images from a patterned photocathode onto an electron-sensitive resist layer, thereby replacing the conventional photoresist optical procedures in integrated circuit fabrication [1]. Integrated circuits of minimum linewidths of 0.5 mil have been fabricated to... View full abstract»

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  • Anode sputtering in high-voltage mercury arc valves

    Publication Year: 1970, Page(s):470 - 474
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    A method is described whereby the anode sputtering rate during recovery of a mercury arc valve can be estimated from its transient inverse current and voltage waveforms. Inverse currents have been measured in an experimental valve, from which corresponding anode sputtering rates are deduced for a variety of cathode coolant temperatures and commutation conditions. These measurements substantiate pr... View full abstract»

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  • Effects of gamma radiation on Gunn diodes

    Publication Year: 1970, Page(s):475 - 479
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    Changes in Gunn diode performance caused by 1.25 MeV Co-60 gamma radiation have been studied. Hall effect measurements as a function of temperature made on GaAs crystals grown by liquid epitaxy reveal an energy level 0.13 eV below the conduction band which was not detectable before irradiation. Detailed measurements of low-field resistance were carried out on Gunn diodes together with output power... View full abstract»

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  • Obtaining improved accuracy in numerical analysis of potentials near a space-charge-limited cathode

    Publication Year: 1970, Page(s):480 - 481
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    This correspondence describes a technique for improving the accuracy of numerical calculations near a space-charge-limited cathode. A one-dimensional diode is employed to show that an order of magnitude reduction in the errors is obtainable when compared with those obtained using standard relaxation techniques. View full abstract»

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  • Drift velocity saturation in MOS transistors

    Publication Year: 1970, Page(s):481 - 482
    Cited by:  Papers (43)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    It is shown that the drift velocity saturation of the current carriers in the channel of a MOSFET iS an important factor in the analysis of the electrical behavior of such devices. The theory presented here, which includes this effect, shows improved agreement with measured output characteristics. View full abstract»

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  • Thermal spreading resistance of ring-geometry diodes

    Publication Year: 1970, Page(s):482 - 484
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    Mesa avalanche diodes shaped in ring structures have lower thermal spreading resistances than conventional disk mesa diodes of equal junction area. A simple analog electrolytic tank was built to measure the spreading resistance of ring geometries, A normalized curve was obtained which allows the determination of thermal spreading resistance for any ring structure. View full abstract»

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  • Correction terms for contacts to diffused resistors

    Publication Year: 1970, Page(s):484 - 485
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    Correction terms obtained from measurements on typical planar resistors are given and compared to values expected from two different mechanisms: inhomogeneous current flow around the contact or contact resistance between metal and diffusion layer. Good agreement between contact resistance model and experiment is shown. View full abstract»

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  • A new air-isolation process for monolithic integrated circuits

    Publication Year: 1970, Page(s):485 - 487
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    A new air-isolation process is described which overcomes many of the problems of existing isolation technologies. The process consists of standard integrated circuit processing except for the p-n junction isolation process which is omitted. After metal mask, the device wafer is glass bonded face down to a supporting silicon wafer. Subsequent backlapping, masking, and mesa etching steps yield an ai... View full abstract»

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  • [Back cover]

    Publication Year: 1970, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it