IEEE Transactions on Electron Devices

Issue 5 • May 1970

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Displaying Results 1 - 10 of 10
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • Characterization of avalanche diode TRAPATT oscillators

    Publication Year: 1970, Page(s):397 - 404
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (792 KB)

    The characteristics of a coaxial avalanche diode oscillator circuit are calculated and compared with experimental results. The circuit admittance, as seen at the diode terminals, is calculated in the frequency domain for "optimally tuned" experimental conditions. The impulse response function of the circuit, as obtained from the transformed admittance, is used to obtain time-evolution solutions of... View full abstract»

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  • Diode edge effect on doping-profile measurements

    Publication Year: 1970, Page(s):404 - 407
    Cited by:  Papers (30)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (448 KB)

    Diode edge effects can be a source of error in doping profile measurements made by the capacity versus voltage technique or CIP technique. A numerical calculation indicates that for uniform doping the apparent doping will be higher than the actual doping by a factor of(1 +bx/r)^{3}whereb=1.5andx/ris the ratio of depthxto diode radiusr. Compari... View full abstract»

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  • Measurement of drift velocity of electrons in silicon by exciting a diode structure with short superradiant laser pulses

    Publication Year: 1970, Page(s):407 - 412
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (480 KB)

    The drift velocity of electrons in high-resistivity silicon was measured by studying the current pulses induced in a surface barrier diode by subnanosecond light pulses from a super-radiant gas laser. Measurements were made for electric field strengths up to ≃1.2 × 104V/cm, at room temperature. The low-field mobility value obtained was 1400 ±5O cm2/V.s. The de... View full abstract»

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  • Performance potential of high-frequency heterojunction transistors

    Publication Year: 1970, Page(s):413 - 420
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (784 KB)

    Assuming a state-of-the-art microwave planar geometry, the maximum frequency of oscillation has been calculated for GaAs-Ge heterojunction transistors utilizing either doped or high-resistivity space-charge-limited emitters. This is compared with a Ge homojunction transistor of the same geometry. A detailed equivalent circuit is used which accounts for the parasitics of the chip. It is shown that ... View full abstract»

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  • Multiplication in collector junctions of silicon n-p-n and p-n-p transistors

    Publication Year: 1970, Page(s):420 - 423
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (388 KB)

    The values 1-1/Mfor both electrons and holes, whereMis the multiplication factor, have been calculated in three different silicon p-n junctions. The logarithmic plot of 1 - 1/Mversus the normalized voltageV/V_{B}is well approximated by a straight line for 0.1 > 1 -1/M> 0.005. This range corresponds to the useful range of α0 View full abstract»

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  • Design of an electrooptic light valve projection display

    Publication Year: 1970, Page(s):423 - 428
    Cited by:  Papers (3)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (576 KB)

    A display device, e.g., projection TV, can be made by scanning, with an electron beam, a large sheet of electrooptic crystal in a light valve configuration. The design equations indicate the following. 1) The transfer function will be reasonably linear. 2) The resolution measured at the crystal will be the order of two TV lines per crystal thickness at 15 percent sine; wave response. 3) The output... View full abstract»

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  • A new quasi-static model of space-charge limiting

    Publication Year: 1970, Page(s):429 - 435
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    The classical quasi-static model of space-charge limiting estimates time averages of the potential distribution and the current flow. But numerical studies by Birdsall and Bridges have indicated important limitations in the classical model. In particular, it makes no estimate of the fluctuation in the electric field. This paper proposes an alternative model that does estimate the fluctuation. The ... View full abstract»

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  • Note on the interpretation of C-V data in semiconductor junctions

    Publication Year: 1970, Page(s): 436
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (125 KB)

    This correspondence presents a proof that when Schottky barrier approximations are applicable to a p-n junction, a straight line on the graph of log C versuslog(V+V_{B})requires a power law dependence of doping on depletion width. This dependence isx^{(1/n-2)}. View full abstract»

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  • [Back cover]

    Publication Year: 1970, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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