IEEE Transactions on Electron Devices

Issue 4 • April 1970

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Displaying Results 1 - 25 of 28
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • New associate editor

    Publication Year: 1970, Page(s): 261
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  • Boundary conditions and high-field domains in GaAs

    Publication Year: 1970, Page(s):262 - 270
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1028 KB)

    In the approximations usually employed, the behavior of a GaAs sample in high fields is determined by Poisson's equation and current continuity plus appropriate boundary conditions. It has been demonstrated recently that boundary conditions can determine such properties as the threshold for Gunn oscillations and their amplitude [1]. In this paper we go through all the stationary solutions that can... View full abstract»

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  • A rapid evaluation technique for functional Gunn diodes

    Publication Year: 1970, Page(s):271 - 274
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    A rapid technique for estimating the carrier mobility, average and minimum carrier concentration, and contact resistance in operational Gunn diodes is presented. Although the physical nature of the functional Gunn-effect device (i.e., an n-type active layer with only two n+ohmic contacts) restricts what can be measured, it will be shown that information useful for estimating device perf... View full abstract»

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  • Effects of doping profile upon electrical characteristics of Gunn diodes

    Publication Year: 1970, Page(s):275 - 281
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (584 KB)

    A one-dimensional computer simulation of Gunn diodes with zero-impedance external load has been made for various nonuniform doping profiles including asymmetrical step-like ones, linearly graded ones, and a periodic square-wave one. The distances between the electrodes and the doping level are taken as 10 µ and an order of 1015cm-3, respectively. Current-voltage characte... View full abstract»

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  • Resonance and parametric effects in IMPATT diodes

    Publication Year: 1970, Page(s):282 - 289
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (696 KB)

    The theory of nonlinear fundamental and subharmonic resonances in the avalanche region of IMPATT diodes is developed by use of the method of harmonic balance. Due to the high resonance strength of the subharmonic mode, and as a consequence of large-signal parametric interaction, the negative resistance of the diode is markedly increased at the presence of a self-pumped oscillation of twice the fre... View full abstract»

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  • Determination of germanium ionization coefficients from small-signal IMPATT diode characteristics

    Publication Year: 1970, Page(s):290 - 299
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (970 KB)

    Small-signal measurements of germanium IMPATT diode admittance in the frequency range from 2 to 8 GHz were taken for various current densities. These measurements were compared with the small-signal admittances calculated using the model developed by Gummel, Scharfetter, and Blue [1], [2]. Values for the ionization coefficients and saturated velocities for electrons and holes used for the calculat... View full abstract»

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  • Silicon pνn avalanche transit-time diodes

    Publication Year: 1970, Page(s):299 - 304
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (616 KB)

    Negative resistance characteristics have been observed in the range 3-12 GHz in silicon pvn diodes using avalanche transit-time operation (IMPATT diodes). The diodes, made by a single boron diffusion into epitaxial wafers, had breakdown voltages from 40 to 100 volts. A few hundred diodes all showed, quite reproducibly, microwave negative resistance. Measurement by swept-frequency reflection showed... View full abstract»

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  • Vacuum-deposited thin-film p-Se/n-CdSe heterojunction diodes

    Publication Year: 1970, Page(s):305 - 310
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    A preliminary feasibility study has been made of vacuum-deposited thin-film diodes based on the p-Se/n-CdSe heterojunction system. These diodes have excellent rectification properties, including: 1) 70-volt reverse breakdown, 2) 105rectification ratio over a range of 25 volts, and 3) 0.5-volt forward offset voltage. The diodes have a "sandwich-cell" structure formed by depositing a CdSe... View full abstract»

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  • Temperature dependence of the conversion loss and response time of InSb mixers

    Publication Year: 1970, Page(s):310 - 319
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    The performance of bulk InSb mixers is investigated, A heterodyne experiment has been performed at 69 GHz with IF's varying from 0.4 to 20 MHz. In this experiment the conversion loss was measured as a function of the intermediate frequency (IF) for ambient temperatures in the range 1.5 to 20°K. The IF at which the conversion loss increased by 3 dB determined the response time. Using an electr... View full abstract»

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  • Avalanche injection and second breakdown in transistors

    Publication Year: 1970, Page(s):320 - 335
    Cited by:  Papers (157)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1432 KB)

    A rapid type of second breakdown observed in silicon n+-p-n-n+transistors is shown to be due to avalanche injection at the collector n-n+junction. Localized thermal effects, which are usually associated With second breakdown, are shown to play a minor role in the initiation of the transition to the low voltage state. A useful tool in the analysis of avalanche injec... View full abstract»

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  • A generalized analytical theory of the response of a photoconductor

    Publication Year: 1970, Page(s):336 - 341
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    In this work a theoretical model is derived for predicting the response of a photoconductor. This model takes into account direct recombination, surface recombination, recombination through traps (for the two limiting cases of high- and low-trap effect), Auger-type processes, and diffusion effect. Complete solutions are obtained for both steady-state and transient conditions for these various case... View full abstract»

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  • Silicon p-i-n photodetector using internal reflection method

    Publication Year: 1970, Page(s):342 - 347
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    A semiconductor photodetector is proposed which makes use of an internal reflection method to enhance the photoresponse. This method is to let the incident light be multiply-reflected in the detector so that a long distance is traveled and most of the photon energy is absorbed by the detector. Theoretical analysis of the steady-state and time-dependent photoresponses for a p-i-n photodetector is p... View full abstract»

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  • Comparison of photomultipliers and avalanche photodiodes for laser applications

    Publication Year: 1970, Page(s):347 - 352
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    Photomultipliers and avalanche photodiodes are compared as detectors of short light pulses such as might be encountered in laser ranging or laser PCM communication systems. Expressions are derived for the optimum spectral response of the amplifier-filter combination which maximizes the signal-to-noise ratio for the two detectors. Assuming that this optimized filter is used, the minimum detectable ... View full abstract»

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  • Effects of a gyromagnetic material in a double-coupled helix traveling-wave tube

    Publication Year: 1970, Page(s):353 - 365
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (960 KB)

    An analysis of the double-coupled helix with a gyromagnetic material (ferrite) inside the inner helix is presented using the field theory approach. Quantitative results are presented for the slow-wave solution. Qualitative results in the form of graphs illustrate wave propagation characteristics, impedance, resonance effects, and electric field variations for typical values of the ferrite paramete... View full abstract»

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  • Harmonic generation in octave bandwidth traveling-wave tubes

    Publication Year: 1970, Page(s):365 - 372
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    This paper describes the investigation of harmonic generation in traveling-wave tubes (TWT's) via large-signal analysis and digital computer techniques. Efficiency degradation and harmonic power content are shown to be importantly related to such TWT design considerations as circuit dispersion, harmonic coupling impedance ratio, and gain level. Also described is the phenomenon of second harmonic i... View full abstract»

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  • Digital computer simulation of crossed-field electron guns

    Publication Year: 1970, Page(s):373 - 377
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (400 KB)

    A digital computer program for the simulation of crossed-field electron guns is described. The program simulates the electrodes and fields within the gun on a matrix of up to 10 000 points. The program, written in FORTRAN II for the IBM 7090, is generally executed in six minutes or less. It is shown to produce results within four percent of theory and experiment for two different cases. View full abstract»

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  • Radioactive tracer study of gas cleanup in duplexer discharges

    Publication Year: 1970, Page(s):377 - 379
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    Radioactive tracer gases are used to study the RF-activated gas cleanup process in duplexer discharges. The radioactive mapping technique provides means of calculating the effective discharge area and expected operating life of quartz tubes used in pre-TR and ATR devices. In metallic-wall TR tubes, the tracer technique is also useful for the study of dominant sorption mechanisms and the critical a... View full abstract»

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  • Magnetron anode erosion in the presence of cathodes containing oxides

    Publication Year: 1970, Page(s): 377
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (152 KB)

    An association between magnetron anode vane erosion and presence of oxides in the cathode has been noticed at several laboratories in the past 10 to 15 years, although it does not seem to have been formally reported. it has been suggested that CO rather than oxygen is involved, but the prolem has not been clearly resolved. It assumes some importance in connection with the use of oxygen replenisher... View full abstract»

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  • Correction to "Waves on an electron beam in vacuo and in a plasma"

    Publication Year: 1970, Page(s):379 - 380
    Cited by:  Papers (1)
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  • An experimental CW klystron for generating 0.4-mm waves

    Publication Year: 1970, Page(s):380 - 382
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    A klystron frequency multiplier for 0.4-mm waves is described, generating its own driving power by means of an oscillating extended interaction buncher. By making use of the 18th to 22nd harmonics and two catcher cavity modes, the tube is tunable over a 15 percent band. The maximum output power is 1 mW CW at 673 GHz. View full abstract»

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  • Coupled-mode equations for crossed-field beam tubes

    Publication Year: 1970, Page(s):382 - 383
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    The coupled-mode equations or a thin beam in a crossed-field electron ube are given for the general case of a noncentered beam. View full abstract»

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  • A capacitively coupled meander line for solid-state traveling-wave amplification

    Publication Year: 1970, Page(s):383 - 384
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    A slow-wave structure intended for use in solid-state traveling-wave amplifiers is described. The structure is a meander line with adjacent conducting elements electrically connected by lumped capacitors. The dispersion curve is derived and shown to agree with experiment. The structure is found to have a passband which is dependent on the coupling capacitors. The interaction impedance is estimated... View full abstract»

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  • Comments on "The saturated photovoltage of a p-n junction"

    Publication Year: 1970, Page(s):384 - 385
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (253 KB)

    In a recent paper, Gray has shown that the open-circuit photovoltage ratio of p+n to n+p junctions is given by the mobility ratio. We show here that this is an overestimation, the ratio being much smaller if an exact analysis is used. View full abstract»

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  • Voltage shifts in the forward V-I characteristics of p-n-p-n power switches

    Publication Year: 1970, Page(s):385 - 386
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (258 KB)

    The forward V-I characteristics of p-n-p-n power switches usually consist of one or more voltage shifts having negative resistance characteristics at small forward current. This phenomenon is attributed to local turning on of the switch due to shorted emitter and/or shorting dots used to enhance the dv/dt capability of the device, since lateral current flow plays a significant role in determining ... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it