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Electron Devices, IEEE Transactions on

Issue 3 • Date March 1970

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Displaying Results 1 - 16 of 16
  • [Front cover and table of contents]

    Publication Year: 1970 , Page(s): c1
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  • Introduction

    Publication Year: 1970 , Page(s): 177
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  • Carrier waves in semiconductors I: Zero temperature theory

    Publication Year: 1970 , Page(s): 178 - 192
    Cited by:  Papers (7)
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    A detailed treatment of the space-charge waves or carrier waves which are associated with drifting carriers in a semiconductor is given. These waves have a phase velocity comparable to that of the drifting carriers, but normally have very high loss. This dielectric relaxation loss may be radically decreased by utilizing the interaction between two sets of carriers, working with semiconductors of small cross section, or semiconductors placed against high permittivity materials. Gain may be obtained by using special materials such as GaAs, or by the use of interactions between two sets of carriers in the presence of a magnetic field. The treatment given neglects the effect of diffusion so as to keep the mathematics simple and emphasize the physics of the problem. In a later paper, methods of taking diffusion into account will be given. View full abstract»

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  • Traveling-wave amplification and power flow in conducting solids

    Publication Year: 1970 , Page(s): 193 - 199
    Cited by:  Papers (3)
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    An RF power-density function is used to obtain some of the characteristics of small-signal traveling-wave amplification in solids. Criteria for determining instability conditions are developed, in terms of well-defined drift and phase velocities, for both electrostatic and electromagnetic wave systems. The results are useful, typically, at or below the microwave range. More exactly, we investigate cases where the operating frequency is much less than the carrier-lattice collision frequency and the wavelength λ is much greater than l, the mean-free path. Effects due to a transverse or longitudinal applied magnetic field and the presence of more than one carrier type are included; this leads to modification of the vdrift> vphaseamplification rule used in simpler systems. Diffusion effects are discussed. Helicon, acoustic-wave, and two-stream problems are used to illustrate some of the results. In considering the carrier-to-wave energy transfer, kinetic power is shown to be negligible in solids when kl > 1, where k =2π/λ. The important term is seen to be one neglected in earlier work. It represents power loss when no drift field is applied and negative loss under amplification conditions. View full abstract»

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  • Electron—Hole plasma instabilities

    Publication Year: 1970 , Page(s): 200 - 206
    Cited by:  Papers (1)
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    A semiconductor plasma slab will support three classes of slow quasi-static waves: 1) bulk waves which involve space-charge disturbance throughout the bulk of a thick slab, 2) surface waves which involve surface charge disturbance along one surface of a thick slab, and 3) thin-layer waves which involve dipolar surface charge disturbance on either side of a thin plasma slab. A review of the linear stability theory for these waves indicates that each wave class can support one or more potentially unstable two-stream modes. Four of these modes should be observable in InSb: 1) a thin-layer wave interaction in the low magnetic field limit ( \omega _{ce}\tau _{e} \ll 1 ), 2) a collision-induced mode supported by the thin-layer waves when \omega _{ce}\tau _{e} g\sim 1 , 3) a corresponding collision-induced mode supported by the bulk space-charge waves when \omega _{ce}\tau _{e} g\sim 1 , and 4) a mode which results from the interaction of surface waves. The second mode has been well documented experimentally. View full abstract»

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  • Current oscillations and negative differential conductivity in n-type germanium

    Publication Year: 1970 , Page(s): 207 - 213
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    The existence of several types of high-frequency majority carrier current instabilities in [100] and [110] oriented samples of n-type germanium has led to a renewed interest in the conductivity of germanium in a strong electric field. We review the experimental situation with regard to these instabilities and show how their properties can be understood in terms of bulk negative differential conductivity, which has been shown to occur in this material for temperatures below about 120°K. The present state of understanding of the origin of this BNDC effect in terms of the band structure and scattering mechanisms in germanium is summarized. View full abstract»

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  • Acoustoelectric amplification in composite piezoelectric and semiconducting structures

    Publication Year: 1970 , Page(s): 214 - 218
    Cited by:  Papers (3)
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    Acoustoelectric amplification in composite semiconducting and piezoelectric structures is discussed, with emphasis on work with guided plate modes in PZT and LiNbO3. These guided modes have proven to yield very strong amplification at frequencies between 1 and 10 MHz, with a variety of mode-dependent characteristics such as frequency dependence and dispersion. A simple theoretical treatment for the acoustoelectric interaction in composite structures is given, which stresses the analogy with a piezoelectric semiconductor. The behavior expected from an interaction with several types of carriers is considered, and it is shown that the shape of the amplification curve, in this case, depends on an average drift parameter. Some experimental results involving both electrons and holes are also cited. View full abstract»

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  • The theory of the interaction of drifting carriers in a semiconductor with external traveling-wave circuits

    Publication Year: 1970 , Page(s): 219 - 223
    Cited by:  Papers (1)
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    The interaction between slow electromagnetic waves and drifting carriers in a semiconductor is analyzed including mechanisms important and peculiar to the semiconductor device. The growth rate coefficients, excitation amplitudes, and phase are found using a modification of Pierce's one-dimensional model of the traveling-wave tube. A technique for calculating a growing mode criterion is presented. View full abstract»

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  • Spin-wave/Carrier-wave interactions

    Publication Year: 1970 , Page(s): 224 - 229
    Cited by:  Papers (4)
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    The possibility of spin-wave/carrier-wave interactions has been considered with a more rigorous stability analysis than that used in previous studies. It is concluded that unstable bulk interactions in magnetic semiconductors will not be possible until resistivities are reduced to several orders of magnitude below those presently available. Composite YIG-InSb structures are potentially unstable at room temperature. The composite system can provide high-gain, slow-wave amplification at X-band with delay line capability (2300 dB/cm at 7.5 GHz). In a uniform magnetic field, the instability exhibits an exceedingly narrow bandwidth, 2.5 MHz, which would be a great disadvantage in any practical application as an amplifier. This could be offset somewhat, with a resulting loss of gain, by applying an inhomogeneous magnetic field. View full abstract»

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  • Acoustooptic interactions and devices

    Publication Year: 1970 , Page(s): 229 - 235
    Cited by:  Papers (4)
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    A review of recent advances in the understanding of the interaction of light and ultrasonic waves in solids and liquids is presented, emphasizing the Bragg diffraction regime wherein the diffracted optical energy is confined near one angular direction. The usefulness of optical beam probing techniques, using laser light sources, for investigating such subjects as ultrasonic attenuation and diffraction, acoustic nonlinear phenomena, magnetoelastic interactions, and photoelastic properties of materials is described. The application of the acoustooptic interaction for the design of devices intended to perform optical information processing functions is also mentioned. Present applications include optical modulators, switches, sequential scanners (such as are useful for television display), random access optical deflectors, and optical correlators. An attempt is made to describe the assets and liabilities of acoustooptic devices and to speculate concerning their future in the practical world. View full abstract»

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  • A new acoustic phonon spectrometer

    Publication Year: 1970 , Page(s): 236 - 239
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    Paramagnetic impurities which interact primarily with the resonant phonons in a dielectric crystal and show large magneto-optical properties can be used as a tunable and sensitive probe of the acoustic waves, or phonons, in a dielectric crystal. Such a technique usually works only at a few degrees Kelvin and is tunable over a wide frequency range, 10-500 GHz, with a magnetic field. View full abstract»

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  • Optical excitation of surface plasmons

    Publication Year: 1970 , Page(s): 240 - 244
    Cited by:  Papers (1)
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    Described are the resonance effects associated with surface plasmon excitation (the excitation of evanescent electro-magnetic surface waves) which occur when light is reflected from metal gratings and rough surfaces. View full abstract»

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  • Parametric excitations of density waves in semiconductors by electromagnetic radiation

    Publication Year: 1970 , Page(s): 245 - 247
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    The parametric excitations of electron-hole density fluctuations by means of a long wavelength radiation field is discussed. The kinetic equations for electrons and holes driven by a "strong" homogeneous radiation field is solved. The condition for the onset of instability is obtained. View full abstract»

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  • Cascade mechanism of nonlinear interactions between modes in a turbulent plasma

    Publication Year: 1970 , Page(s): 247 - 251
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    A hydrodynamical model of plasma turbulence is developed. A cascade concept is utilized to solve the problem of closure, which is characteristic of any nonlinear system. The spectra of kinetic and electrostatic energies are investigated for both the collisional and collisionless cases. In the former case, the spectrum of potential energy from the electrostatic potential fluctuations, as a function of the wave number k , and denoted by G(k) , follows the laws G \sim k^{-3/2} and k^{-9/2} in the inertial and dissipative subranges, respectively. In the latter case, the dissipative law G \sim k^{-5} is derived. The solutions of the kinetic energy spectrum are also found. The anomalous diffusion, called the Bohm diffusion, is derived in the present theory, and is found to play the role of a sink of energy flux across a potential spectrum. View full abstract»

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  • On quasi-particle descriptions of many particle systems

    Publication Year: 1970 , Page(s): 252 - 257
    Cited by:  Papers (1)
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    Quasi-particle descriptions of thermal or weakly turbulent fluctuations in classical many particle systems may be derived with the aid of a complete set of eigenmodes. For a Maxwell-Vlasov electron plasma, the latter comprise a set of continuous and discrete modes, the continuum modes being dressed single-particle excitations with real eignvalues. Fluctuation field correlations can be represented in terms of either the continuous eigenmodes or discrete quasi-modes; the latter characterize collective waves corresponding to complex quasi-eigenvalues (Landau poles)on the unphysical sheet of the complex frequency Plane. Quasi-mode representations of the dynamics of weakly correlated fluctuations can be interpreted in terms of quasi-particles moving in their phase space along trajectories determined by dispersion relations characteristic of quasi-mode "energy." The quasi-particle density in phase space is determined by the amplitude correlation spectrum of the quasimodes. View full abstract»

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  • [Back cover]

    Publication Year: 1970 , Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego