IEEE Transactions on Electron Devices

Issue 2 • Feb. 1970

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Displaying Results 1 - 18 of 18
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • A lumped model for characterizing single and multiple domain propagation in bulk GaAs

    Publication Year: 1970, Page(s):93 - 102
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (904 KB)

    A study of the nucleation and propagation of single and multiple domains in n-GaAs has led to the development of a circuit oriented lumped model for the representation of this phenomenon. The lumped bulk model accurately predicts device behavior during domain nucleation, modulation and quenching, without indicating domain position within the bulk. The proposed equivalent circuit is developed in a ... View full abstract»

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  • Extension of the lumped bulk device model to incorporate the process of domain dissolution

    Publication Year: 1970, Page(s):103 - 107
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (488 KB)

    A lumped model capable of representing domain nucleation, modulation, and quenching in n-GaAs has previously been reported. In the present paper an algorithm is proposed which successfully describes the process of domain dissolution. An analytical description of the mechanisms involved is achieved by characterizing the shape of a stable domain and by postulating the existence of an "apparent" doma... View full abstract»

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  • Large-signal nonlinear analysis of a high-power high-frequency junction transistor

    Publication Year: 1970, Page(s):108 - 119
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1048 KB)

    A relatively complex nonlinear model is derived for large-signal analysis of high-power high-frequency junction transistors. The model, based on a modified Ebers-Moll equivalent circuit, is particularly useful when the transistor operates as a high-speed switch and is generally either ON or OFF, and seldom in between, or ACTIVE. A digital computer program NET-1 is used for transient analysis of th... View full abstract»

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  • An analysis of current saturation mechanism of junction field-effect transistors

    Publication Year: 1970, Page(s):120 - 127
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (672 KB)

    A two-dimensional numerical analysis has been amde for junction field-effect transistors with small and large values of length-to-width ratio. Comparison of the results for different drain bias voltages shows the cause of the saturation of the drain current and the finite differential drain conductance in the saturation region. The effects of the geometry of the device and the field dependent mobi... View full abstract»

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  • Low-frequency noise sources in bipolar junction transistors

    Publication Year: 1970, Page(s):128 - 134
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (877 KB)

    Low-frequency noise measurements are made on specially fabricated silicon tetrode planar transistors. The measurements show the existence of three distinct sources of excess noise: a 1/fnoise source associated with the surface; a l/fnoise source associated with the active base region; and an anomalous burst noise source associated with the forward-biased emitter-base junction... View full abstract»

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  • Avalanche-induced 1/f noise in bipolar transistors

    Publication Year: 1970, Page(s):134 - 136
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (293 KB)

    It has been proposed that degradation of low current hFE, as a result of avalanching the emitter-base junction of a bipolar transistor, can be attributed to an increase in surface recombination velocity within the emitter-base space-charge region. This work shows that 1/fnoise is also increased during avalanche and that this increase is consistent with a previously reported c... View full abstract»

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  • A thin-film inductance using thermal filaments

    Publication Year: 1970, Page(s):137 - 148
    Cited by:  Papers (6)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1272 KB)

    A particular thin-film structure is analyzed to determine the conditions for thermal filament formation. Assuming that these conditions are satisfied and that the structure is electrically biased so that a thermal filament exists, the current-voltage characteristic and small-signal equivalent circuit for a general conductivity-temperature characteristic in the thin film are determined. It is shown... View full abstract»

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  • Ferroelectric ceramic light gates operated in a voltage-controlled mode

    Publication Year: 1970, Page(s):148 - 157
    Cited by:  Papers (12)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1168 KB)

    Plates of lead zirconate-lead titanate ferroelectric ceramic can have 1) low-loss optical transmission in thin, polished sections and 2) uniaxial birefringence dependent upon remanent polarization. These properties are potentially useful in electrically variable optical retarders, modulators, and latching light gates. This paper reports the results of measurements of basic light-gate devices using... View full abstract»

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  • An interpretation of tunneling time

    Publication Year: 1970, Page(s):157 - 159
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (240 KB)

    The time required for tunneling through a wide potential barrier has been obtained, in general, using a closed form method. We show that a knowledge of the phase delays at the boundary surfaces yields the tunneling time and as a consequence the tunneling time is independent of the barrier thickness. For the particular case of a rectangular barrier the tunneling time is identical with that derived ... View full abstract»

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  • Equivalent generators for a cavity with a bunched charged beam

    Publication Year: 1970, Page(s):160 - 164
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (440 KB)

    Equivalent generators are developed to represent a conducting cavity of arbitrary size and shape through which a periodically bunched beam of charged particles passes. This development is reminiscent of the Lorentz reciprocity theorem. Three circuits are developed: a Norton's theorem generator, a Thevenin's theorem generator, and an equivalent wave generator. View full abstract»

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  • The choice of boundary conditions in Monte Carlo calculations of noise

    Publication Year: 1970, Page(s):165 - 166
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (320 KB)

    Probability density functions and the corresponding cumulative distribution functions for density and Velocity fluctuations at the surface of a thermionic emitter are discussed. In particular, it is shown that as far as velocity fluctuations are concerned, the appropriate probability density function is given byf(w | r_{c}) = (2 / pi^{3/2}) exp (-w^{2}), where w is the reduced velocity.... View full abstract»

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  • New method of measuring noise parameters of electron beams using two fixed cavities

    Publication Year: 1970, Page(s):166 - 168
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (472 KB)

    A new method of measuring noise parameters of electron beams is proposed which requires only two fixed cavities, The demonstration was done with a gun in which the configuration of electrodes was different from normal. View full abstract»

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  • RF defocusing of ion-focused electron beams

    Publication Year: 1970, Page(s):168 - 169
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (320 KB)

    Ion-focusing of electron beams in high-power linear-beam microwave tubes is considered, and a qualitative discussion of the defocusing mechanism of an externally applied RF power is presented. The primary mechanism of beam breakup is the space-charge force of bunched electrons which limits the use of ion-focusing in high-power tubes. View full abstract»

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  • Relation between ion spot growth and gas ratio in storage tubes

    Publication Year: 1970, Page(s):169 - 170
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (384 KB)

    In a recording Storage tube, the relation between the rate of growth of the central maximum of the ion spot and the gas content is shown to be strongly non-linear. However, by integrating over the entire ion spot, it is possible to calculate the positive ion current and, from that, the gas ratio and gas content. It is concluded that, whenever possible, gas content should be determined by gas ratio... View full abstract»

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  • Resistivity changes caused by gold diffusion in epitaxial n-p-n transistors

    Publication Year: 1970, Page(s):170 - 172
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (496 KB)

    Differential capacitance was used to determine resistivity changes in high-BVCEOn-p-n epitaxial transistor structures caused by gold diffusion and subsequent heat cycles. Resistivities corresponding to 8 × 1014to 2 × 1015phosphorus atoms/ cm3were found to be compensated to 1012/ cm8after a 15-min gold diffusion at 1150... View full abstract»

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  • Extensions of the small-signal theory of negative resistance in gallium arsenide

    Publication Year: 1970, Page(s):172 - 173
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (224 KB)

    The small-signal model for the Gunn effect proposed by Englemann and Quate is revised to include the effects of average mobility of the two-valley system in the expressions for carrier velocity as a function of electric field. The dispersion relation is then rederived, and computed results consistent with experimental observations are shown. View full abstract»

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  • [Back cover]

    Publication Year: 1970, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it