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IEEE Transactions on Electron Devices

Issue 1 • Jan. 1970

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Displaying Results 1 - 17 of 17
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • Negative-resistance diode power amplification

    Publication Year: 1970, Page(s):1 - 8
    Cited by:  Papers (36)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (779 KB)

    An analysis is presented for the nonlinear behavior of power amplifiers utilizing negative-resistance diodes in a reflection circuit. The analysis applies to both stable and locked-oscillator modes of operation. Special emphasis is given to a simple model involving a cubic nonlinearity in theI-Vrelationship, and to the idealized LSA device in an amplification mode. View full abstract»

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  • Device physics of TRAPATT oscillators

    Publication Year: 1970, Page(s):9 - 21
    Cited by:  Papers (75)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1224 KB)

    This paper utilizes a simplified physical model to describe TRAPATT (TRApped Plasma Avalanche Triggered Transit) operation. By yielding on computational accuracy, a complete high-efficiency device design is generated and the dependence of operation on physical parameters is elucidated. The extreme complexity of the precise differential equations describing TRAPATT operation has made the calculatio... View full abstract»

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  • Further studies of the dynamic scattering mode in nematic liquid crystals

    Publication Year: 1970, Page(s):22 - 26
    Cited by:  Papers (8)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    Evaluation of fabrication procedures and operating life have indicated that moisture can play a major role in determining the performance of nematic liquid crystal displays based on the dynamic scattering mode (DSM) in anisylidene-p-aminophenyl-acetate. There is strong evidence that the presence of moisture promotes electron injection by lowering the potential barrier between the metal electrode a... View full abstract»

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  • Pulsed resistance bridge for studies of semiconductor contacts

    Publication Year: 1970, Page(s):27 - 30
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (392 KB)

    A pulsed (∼3-5 µs pulse width; 30-200 Hz repetition rate) resistance bridge that graphically displays the resistance voltage characteristics of semiconductor samples is described. Using this instrument it is possible to detect changes in the resistanceDelta Rof the semiconductor sample of approximately 0.1 percent. With this sensitivity one can determine the quality of the co... View full abstract»

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  • Normal modes of carrier waves in semiconductor plates

    Publication Year: 1970, Page(s):30 - 37
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    A dispersion relation for waves in an extrinsic semiconductor plate or film with an applied electric field is derived. It is shown that there exists an infinite number of modes. An arbitrary perturbation can be expressed as a superposition of modes. Expressions for the expansion coefficients are derived. Finally, it is shown that a perturbation which is initially a plane wave in a thick plate, rem... View full abstract»

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  • Transport equations for electrons in two-valley semiconductors

    Publication Year: 1970, Page(s):38 - 47
    Cited by:  Papers (516)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1056 KB)

    Transport equations are derived for particles, momentum, and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs. Care is taken to state and discuss the assumptions which are made in the derivation. The collision processes are expressed in terms of relaxation times. The accuracy is improved by considering these to depend on the average kinetic ener... View full abstract»

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  • Dielectric-loaded self-resonant LSA diode

    Publication Year: 1970, Page(s):47 - 52
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    The realization of the predicted dc to RF conversion efficiency of LSA oscillators operating around 100 GHz is expected to require low-loss resonant circuits. At these higher frequencies, the practical difficulties attendant upon the construction of conventional waveguide elements suggest that a more compact resonant circuit may be useful. The resonator studied theoretically in the present paper t... View full abstract»

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  • Transit time in the base region of drift transistors considering diffusion, recombination, and variable built-in electric field

    Publication Year: 1970, Page(s):53 - 63
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    The present work gives detailed analysis of the transit time of injected minority carriers in the base region of drift transistors, taking into consideration the effect of recombination as well as the variations in the built-in electric field. Some useful impurity-density distributions in the base region are analyzed in detail. Graphs of transit time for these distributions under different conditi... View full abstract»

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  • An optimal NOR logic element using nonlinear resistance

    Publication Year: 1970, Page(s):63 - 75
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1048 KB)

    The design procedures for a NOR logic element using a nonlinear collector resistor are described. The nonlinear collector resistor is used as a means for reducing dissipation over a linear resistor with the same fan-out capability. The nonlinear resistor is combined with a standard transistor-resistor logic gate to reduce the effects of two of the undesirable characteristics of this type of logic,... View full abstract»

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  • Large-signal electronic admittance in a long transit angle cavity

    Publication Year: 1970, Page(s):76 - 79
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    Using the Lagrangian formulation, the large-signal electronic admittance for a long transit angle cavity is calculated. The double integral equation of time and space must be solved; the integration is carried out first in the space direction to obtain accurate space-charge expressions. These solutions are valid even if electron overtaking occurs. View full abstract»

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  • Coexistence of two stable high-field domains in single multiterminal Gunn oscillators

    Publication Year: 1970, Page(s):80 - 81
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    It is demonstrated that two stable high-field domains can be launched in a single multiterminal Gunn device. Such "two-domain" operation may be used for frequency division. View full abstract»

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  • Optical interaction with high-field domain nucleation in GaAs

    Publication Year: 1970, Page(s):81 - 83
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    Control of nucleation of high-field domains in GaAs has been reported for essentially one-dimensional samples. The present work reports an optically triggered bimodal form of domain launch in a 3- dimensional sample. The preliminary experiments describing this effect are given, indicating an optically induced time shift in domain launch without a corresponding change in the repetition rate of a do... View full abstract»

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  • Impedance measurement of the illuminated metal—SiO2—Si diodes

    Publication Year: 1970, Page(s):83 - 85
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (448 KB)

    Impedance measurement of light-illuminated MIS diodes was made. It becomes clear from the results that in the inversion region conductance of the MIS structure is more sensitive to illumination than its capacitance and that negative photoconductivity appears at low frequency, which is explained by the theory of Grosvalet et al. View full abstract»

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  • A 60- to 96-GHz high-temperature pressure window

    Publication Year: 1970, Page(s):85 - 86
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    Construction details of a mica millimeter-wave pressure window are given. Insertion loss under 0.4 dB from 60 to 90 GHz was achieved. View full abstract»

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  • Photoelectric fields in semiconductors under strong excitation

    Publication Year: 1970, Page(s):86 - 87
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Photoelectric fields induced in semiconductors with nonuniform impurity profiles cancel the built-in electric field. In the case of strong photoexcitation, the maximum open-circuit voltage approaches the internal built-in potential difference due to the impurity gradient between the ohmic contact probes on the semiconductor slice. View full abstract»

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  • [Back cover]

    Publication Year: 1970, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it