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IEEE Transactions on Electron Devices

Issue 12 • Dec. 1969

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Displaying Results 1 - 19 of 19
  • [Front cover and table of contents]

    Publication Year: 1969, Page(s): c1
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    Freely Available from IEEE
  • Some considerations for reduction of noise and instability improvement in high-power crossed-field devices

    Publication Year: 1969, Page(s):977 - 985
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1008 KB)

    The maximum potential of the high-power crossed-field devices has been restricted because of the presence of instability in these devices without any RF drive. The experimental investigation of the crossed-field instability as found from various tubes is briefly reviewed. It is believed that this instability is due to interaction of the slow cyclotron wave with the fast forward circuit wave. The t... View full abstract»

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  • A nonreentrant crossed-field amplifier with cycloiding injected beam

    Publication Year: 1969, Page(s):986 - 995
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    Nonreentrant injected-beam crossed-field amplifiers usually employ a thin laminar beam positioned well above the sole electrode. In operation, the beam is gradually bunched by a phase-focusing action. This paper describes the analysis and demonstration of such an amplifier, with an important difference: the electrons of the beam have random cycloidal trajectories extending to the sole instead of f... View full abstract»

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  • A new type of cathode-ray tube with a crossed-field gun

    Publication Year: 1969, Page(s):995 - 1001
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    This paper introduces a new type of cathode-ray tube with a crossed-field electron gun which produces an electron beam in a region where a nonuniform magnetic field and an electric field cross perpendicularly. The new configuration gives increased freedom in the design of crossed-field guns. As a result, a long, directly heated cathode can be readily applied to a gun structure which makes high per... View full abstract»

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  • Propagation and excitation of perturbations in electron beams with velocity shear

    Publication Year: 1969, Page(s):1002 - 1009
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    A theoretical investigation of the influence of a spatially varying drift velocity on the perturbations in magnetically focused electron beams is presented. The wave propagation on such beams, focused by infinite magnetic fields, is studied under the small-wave assumption. The dispersion relation for slow waves is derived and solved for different transversal boundary conditions. Two sets of infini... View full abstract»

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  • Design formulas for helix dispersion shaping

    Publication Year: 1969, Page(s):1010 - 1014
    Cited by:  Papers (53)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    A simple method of calculating effects of various boundaries around the helix on the dispersion relation and the interaction impedance is presented. The analytical technique is based on the use of equivalent circuit parameters derived from rigorous field analyses. The main advantage of this method is that effects of various perturbing objects (dielectrics, shields, etc.) can be calculated independ... View full abstract»

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  • Excitation of elastic surface waves by spatial harmonics of interdigital transducers

    Publication Year: 1969, Page(s):1014 - 1017
    Cited by:  Papers (135)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    The electric field distribution from a surface wave interdigital transducer is investigated. Expressions for the various spatial harmonics and the capacitance of a transducer applied on an anisotropic, small-coupling propagation medium are derived. Experiments are consistent with the calculations. View full abstract»

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  • Room temperature solid-state plasma nonreciprocal microwave devices

    Publication Year: 1969, Page(s):1018 - 1021
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    Nonreciprocal microwave propagation at room temperature in a waveguide which contains of a thin slab n-InSb has been demonstrated by the construction of an isolator, a three-port circulator, and a variable power divider, all operating at K-band frequencies. A forward loss and an isolation of 3 and 15 dB, respectively, was observed for the isolator; the forward and backward losses between adjacent ... View full abstract»

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  • Current crowding on metal contacts to planar devices

    Publication Year: 1969, Page(s):1022 - 1024
    Cited by:  Papers (128)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    A simple transmission line model is applied to the contact region between metal and diffusion layer in planar devices. Taking into account the sheet resistance of the diffusion layer and an ohmic specific contact resistance between metal and semiconductor the theoretical current distribution across the contact is calculated and compared with the results obtained with a model suggested by Kennedy a... View full abstract»

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  • FM noise in a Gunn-effect oscillator

    Publication Year: 1969, Page(s):1025 - 1035
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1040 KB)

    FM noise in a cavity-controlled Gunn oscillator is investigated both theoretically and experimentally. The susceptance of a GaAs Gunn diode fluctuates following velocity fluctuations of high field domains. This results in FM noise. The fluctuations of the velocity are considered to be due mainly to those of carrier concentration fluctuations. Measured FM noise is in good agreement with the model, ... View full abstract»

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  • Application of the distributed equilibrium equivalent circuit model to semiconductor junctions

    Publication Year: 1969, Page(s):1036 - 1041
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (552 KB)

    The small-signal equivalent circuits for a p-n junction at equilibrium and the MOS capacitor in the inversion range are derived from the general transmission line model. Detailed calculations are made to obtain the semiconductor admittance as a function of frequency for a gold-doped n-type silicon substrate. The transmission-line model provides the desired distributed time constant observed in exp... View full abstract»

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  • Large signal turn-on response of the junction transistors including nonlinear effects

    Publication Year: 1969, Page(s):1042 - 1048
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    The large-signal transient behavior of transistors must be considered as nonlinear phenomena. In this paper, the nonlinearity of the transient behavior of transistors in the active region are considered, and the charge control method is extended to include this nonlinearity. Using a one-dimensional homogeneous-base transistor model, the current variation of small-signal time constants in the charg... View full abstract»

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  • High-frequency network properties of MOS transistors including the substrate resistivity effects

    Publication Year: 1969, Page(s):1049 - 1069
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1480 KB)

    The small-signal differential equations describing the intrinsic high-frequency characteristics of MOS transistors are derived under three basic modes of signal application: gate excitation, substrate excitation, and combined gate-substrate excitation. These equations are shown to be analogous to those of a double RC transmission line having a uniformly distributed common resistance but two separa... View full abstract»

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  • Computer analysis of current instabilities in piezoelectric semiconductors

    Publication Year: 1969, Page(s):1069 - 1076
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    A mathematical model is presented which describes the interaction of electrons and phonons in one-dimensional piezo-electric semiconductors. The essential features of the model considered are taken from the theory of Yamashita and Nakamura with the inclusion of both spatial and time variations. Numerical solutions of the basic equations show that the model results in damped current oscillations an... View full abstract»

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  • Relativistic effect in electron cyclotron transverse wave devices

    Publication Year: 1969, Page(s):1077 - 1078
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    This note presents a simple physical argument which demonstrates the importance of relativistic electron bunching interactions between rotating electrons and an RF electric field in the plane of rotation, normal to a dc magnetic field. A magnitude comparison between the relativistic angular bunching and the well-known longitudinal bunching due to the transverse RF magnetic field shows that the clo... View full abstract»

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  • Observation of pulsed magnetron resonant frequency in the preoscillation region

    Publication Year: 1969, Page(s):1078 - 1080
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    A technique has been devised for observing very rapid periodic changes in the match of a microwave component. The method has been used to follow the change of pulsed magnetron resonant frequency in the preoscillation region as the voltage pulse is increased from zero towards threshold. The results are in reasonable agreement with those predicted by a simple theoretical model. View full abstract»

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  • Self-scanned optical transducer using acoustic domains in CdS

    Publication Year: 1969, Page(s):1080 - 1082
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    This paper will present experimental results of a one-dimensional self-scanned optical transducer. Self-scanning is accomplished by the motion of an acoustic domain through a one-cm-long bar of single-crystal CdS. Attached to this bar is a nine-element photoconducting CdS light sensor. When illuminated, the sensors provide a current bypass around the traveling domain, resulting in an output curren... View full abstract»

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  • New method of measurement of diode junction parameters

    Publication Year: 1969, Page(s):1082 - 1083
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    An experimental technique for measuring the two parameters i0and n of the diode equationi=i_{0}[exp (qV/nkT)-1]has been developed. The technique consists of determining n from the ratio of two average currents resulting from two sine waves being impressed-across the diode. Then the value of n is used to determine an amplitude of sine wave to relate i0to the average... View full abstract»

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  • [Back cover]

    Publication Year: 1969, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it