By Topic

IEEE Transactions on Electron Devices

Issue 11 • Date Nov. 1969

Filter Results

Displaying Results 1 - 19 of 19
  • [Front cover and table of contents]

    Publication Year: 1969, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (198 KB)
    Freely Available from IEEE
  • Studies of a magnetically compressed electron beam

    Publication Year: 1969, Page(s):897 - 904
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (848 KB)

    An experimental investigation of the problem of magnetically compressing a perveance 0.54 \times 10^{-6} A/V3/2beam is reported. The feasibility of magnetic compression is demonstrated by passing this beam, compressed in area by a factor of 1000, through a drift tube 0.014 inch in diameter and 1 inch long with 95 percent transmission. The success ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Low-frequency high-efficiency oscillations in germanium IMPATT diodes

    Publication Year: 1969, Page(s):905 - 911
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    Pulsed operation of germanium IMPATT diodes has produced oscillations from 10 MHz to 12 GHz, with efficiencies exceeding 40 percent for frequencies between 2 and 3 GHz. Recorded waveforms show that IMPATT oscillations are required to initiate the lower frequency high-efficiency modes. The diodes are epitaxial diffused junction n-p-p+mesa structures, with depletion widths ∼ 5 micro... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Applications of junction compensation techniques in reducing transient gamma radiation effects in transistor circuits

    Publication Year: 1969, Page(s):912 - 916
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    Any transistor exposed to transient gamma radiation will produce a large transient photocurrent output pulse unless the circuit is hardened or protected against this effect. The hardening technique described in this paper consists of adding a reverse-biased junction between the collector and the base of a transistor, producing a photocurrent which cancels or compensates for the radiation-induced c... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A GaAs avalanche diode analysis and an approximate indirect measurement of hole saturation velocity

    Publication Year: 1969, Page(s):917 - 922
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    GaAs avalanche diodes are observed to operate at frequencies considerably lower than those of Si or Ge diodes with similar doping profiles and dc characteristics. This observed behavior and the analysis shown in this paper enable us to evaluate an approximate hole saturation velocity in GaAs. Small signal impedances and Q's of GaAs avalanche diodes with breakdown voltages of 17, 36, and 58 are cal... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Computer-aided design of a Si avalanche photodiode

    Publication Year: 1969, Page(s):923 - 927
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    A computer-aided design of a Si avalanche photodiode is presented. As an example, the design of the boron diffused photodiode with a desired time constant is carried out. The choice of an area of an active region is not affected by a diffusion condition but primarily by a substrate impurity concentration. For a very high speed response a moderate substrate impurity concentration must be selected. ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • LSA operation of GaAs layers in large-scale tunable microwave circuits

    Publication Year: 1969, Page(s):928 - 934
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    It is shown that the attainment of LSA oscillations in epitaxial layers of GaAs does not rely on operation of the layers in small primary resonant circuits. Restrictions on circuit dimensions have thus been relaxed and LSA oscillations obtained in large scale microwave cavities. Layers of thickness 9-12.5 microns have been operated at frequencies from 26.5-40 GHz, the oscillations being tuned over... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Nonlinear analysis of the avalanche transit-time oscillator

    Publication Year: 1969, Page(s):935 - 945
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1128 KB)

    The nonlinear operating characteristics of the avalanche transit-time oscillator are studied by means of Fourier-series representation. For optimum operation, the oscillator must be designed such that start-oscillation conditions are satisfied simultaneously at the first and the second harmonic of the desired oscillation frequency. Under those conditions the oscillation frequency does not depend o... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Complementary MOS—Bipolar transistor structure

    Publication Year: 1969, Page(s):945 - 951
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    Bipolar transistors can be used to increase the driving capabilities of complementary MOS transistors while retaining the low power dissipation feature. The fabrication of n-p-n bipolar transistors is compatible with the fabrication of the complementary MOS transistors in a monolithic structure. Common collector n-p-n transistors can be fabricated using a diffused n+source-drain region ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Noise of field-effect transistors at very high frequencies

    Publication Year: 1969, Page(s):952 - 957
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    The minimum noise factor of a field-effect transistor has been computed at high frequencies on the basis of the thermal noise of the real parts of the equivalent circuit. A treatment of the intrinsic FET is followed by a consideration of the influence of feedback, parasitic output impedance and parasitic impedance in series with the source on the noise factor. Moreover, the difference between comm... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Field-effect transistor (FET) bibliography 1967, 1968

    Publication Year: 1969, Page(s):957 - 963
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (800 KB)

    This bibliography covers the years 1967 and 1968. It is a continuation of the field-effect transistor bibliography printed in the IEEE Trans. Electron Devices, Vol. ED-14, pp. 710-717, October 1967, covering the years from 1939-1966, and 28 references for 1967. For the sake of completeness, the aforementioned 28 references have been included in the present bibliography. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Infrared detection properties of Zn-doped Si p-i-n diodes

    Publication Year: 1969, Page(s):963 - 964
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    Double-injection p-i-n diodes containing appropriate trapping centers exhibit extremely light sensitive space charge limited current characteristics. Small variations in the i-region space charge induced by low light levels results in lalge changes in the forward current. The detectivity D* of typical Zn-doped devices is approximately 1013. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Propagation of microwaves through InSb in a transverse dc magnetic field

    Publication Year: 1969, Page(s):964 - 965
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    Experiments on the propagation of microwave power through InSb in a transverse dc magnetic field demonstrate the feasibility of low-loss propagation. The results correlate well with theoretical predictions. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A new low-loss mode in semiconductor magnetoplasmas

    Publication Year: 1969, Page(s):965 - 966
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    A new semiconductor plasma wave mode that can propagate with very little attenuation at frequencies smaller than the plasma collision frequency is described. The wave propagates at right angles to a dc magnetic field and may be used for modulation of lasers or for tunable filters in the microwave /millimeter wave region. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An alternative derivation of the small-signal low-frequency admittance matrix for a semiconductor integrated circuit

    Publication Year: 1969, Page(s):966 - 968
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    A four-layer monolithic semiconductor device is considered as a combination of p-n-p and an n-p-n transistor in order to derive more tangible rational approximate admittance parameters. One example of an external connection of such a device is evaluated. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Stability of transistors in avalanche region

    Publication Year: 1969, Page(s):968 - 970
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (392 KB)

    The stability in an avalanche transistor is shown to depend in a very simple way on emitter-base voltage and on collector current. This dependence is quite general, since it is common to transistors of various types and structures (n-p-n, p-n-p, Ge, Si, planar, micro alloy diffused, mesa and drift); moreover the stability conditions show that the punch-through hypothesis is not essential to explai... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comments on static negative resistance in avalanching silicon p+-i-n+junctions

    Publication Year: 1969, Page(s):970 - 972
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (383 KB)

    The dependence of calculated static space-charge-induced negative resistance, in avalanching silicon diodes, upon the form of the ionization rate function is investigated. It is shown that the conversion efficiency calculated using a commonly employed function for the ionization rate is greatly overestimated. It is concluded that the mechanism of static space-charge-induced negative resistance is ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comments on "Magnetic compression of axially symmetric Brillouin focused electron beams"

    Publication Year: 1969, Page(s): 972
    Request permission for commercial reuse | PDF file iconPDF (169 KB)
    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1969, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (884 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it