IEEE Transactions on Electron Devices

Issue 10 • Oct. 1969

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1969, Page(s): c1
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  • Introduction

    Publication Year: 1969, Page(s): 835
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  • Properties of semiconductors useful for sensors

    Publication Year: 1969, Page(s):836 - 839
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (448 KB)

    Different types of solid state sensors demand different basic properties of the semiconductor materials from which they are made. The best transistor material is not necessarily the best material for a certain sensor. One must choose a semiconductor for a particular sensor on the basis of its fundamental properties, such as energy band structure. For example, piezoresistance sensors are made of si... View full abstract»

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  • The Josephson effect

    Publication Year: 1969, Page(s):840 - 844
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    This is a review of the Josephson effect in superconductors, with emphasis on the electrical properties of Josephson junctions and their application to devices and measurement techniques. View full abstract»

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  • Microwave ferrite acceleration sensors

    Publication Year: 1969, Page(s):845 - 849
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    This paper presents a new and potentially simple method of producing a frequency shift proportional to sensed acceleration in a passive microwave device. Magnetostriction effects in microwave ferrite rods are employed to convert an applied stress (acceleration) to a shift in resonant frequency. Equations for the ferrite effective permeability are derived in terms of the internal field component. E... View full abstract»

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  • The heterode strain sensor: An evaporated heterojunction device

    Publication Year: 1969, Page(s):850 - 855
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    A new type of strain sensor has been demonstrated in the laboratory. The basic device is a p-n heterojunction diode that is fabricated by vacuum evaporation techniques directly onto a flexible substrate. Its two important properties are 1) its mechanical input characteristics are determined by the flexible substrate used in fabricating the heterojunction and 2) it functions as a low-output-impedan... View full abstract»

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  • Semiconductor mechanical sensors

    Publication Year: 1969, Page(s):855 - 860
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    The purpose of this paper is to briefly review the concepts proposed to explain the piezojunction effect and to describe the techniques employed in its application. Several experimental transducers which have been constructed and evaluated are described. View full abstract»

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  • Self-compensating silicon load cell with an electronic converter

    Publication Year: 1969, Page(s):861 - 866
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    A diffused strain-gauge transducer has been developed for application in either a load cell or differential pressure configuration. The diffused strain elements eliminate the need for bonding material and insure transmission of the applied load to the sensing elements, One unique feature of the transducer is its ability to provide an electrical signal which is proportional to temperature as well a... View full abstract»

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  • A silicon integrated circuit force sensor

    Publication Year: 1969, Page(s):867 - 870
    Cited by:  Papers (8)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (432 KB)

    A piezoresistive bridge and integrated circuit amplifier can be made in the same silicon cantilever. The purpose of the amplifier is to linearize as well as amplify the output. View full abstract»

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  • Solid-state digital pressure transducer

    Publication Year: 1969, Page(s):870 - 876
    Cited by:  Papers (24)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    The solid-state digital transducer represents a new standard in precision pressure transduction for the next generation of airborne sensors. The pressure transducer produces pulse train outputs as a measure of pressure by developing strains in a silicon diaphragm which incorporates piezoresistive sensing elements. These elements are distributed resistance-capacitance (RC) networks which are diffus... View full abstract»

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  • Total active area silicon photodiode array

    Publication Year: 1969, Page(s):877 - 879
    Cited by:  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    A novel approach is described for fabricating high resolution silicon photodiode arrays whereby virtually none of the irradiated array area is lost for interelement isolation or lead contacting requirements. Element isolation is achieved by biasing a p-v-n diode so that the depletion layer reaches a pattern of grooves etched into the side opposite the radiation. Experiments illustrating the concep... View full abstract»

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  • Mercury cadmium telluride as an infrared detector material

    Publication Year: 1969, Page(s):880 - 884
    Cited by:  Papers (1)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    The properties of the alloy semiconductor Hg1-xCdxTe and its application as an infrared detector material are reviewed. The selection of this alloy system as an infrared detector material is discussed. Bulk and epitaxial crystal growth techniques are described and representative electrical data presented which show the free carrier concentration to be in the 1014-1... View full abstract»

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  • 1-2 micron (Hg, Cd)Te photodetectors

    Publication Year: 1969, Page(s):885 - 890
    Cited by:  Papers (1)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    The performance of mercury cadmium telluride detectors in the 1-2 micron spectral region has been predicted from basic material parameters. Photovoltaic devices should be characterized by specific responsivities of 1 A/W for a 1000 ohm load when transit time limited to less than 20 ns. Photoconductive detectors made from n-type material should have radiative lifetimes of 1 ms. The feasibility of h... View full abstract»

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  • [Back cover]

    Publication Year: 1969, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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