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Electron Devices, IEEE Transactions on

Issue 9 • Date Sept. 1969

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Page(s): c1
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    Freely Available from IEEE
  • High-efficiency operation of a Gunn oscillator in the domain mode

    Page(s): 735 - 748
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    An examination of the problem of obtaining high-efficiency operation of a Gunn oscillator is given in this paper. The results are based on an assumed form of I-V characteristic of the Gunn diode, the ideal voltage and current waveforms being found for high-efficiency operation. The theory for a square wave of current through and voltage across the diode is worked out in detail and shown to predict the experimental results well. It is shown that a voltage waveform consisting of only a fundamental and second harmonic component could give efficiencies in the 20-28 percent range, as much as a factor of 3 larger than for a simple sinusoid. This is a reasonable approximation to the ideal voltage waveform, which is a half sinusoid of voltage. In this paper the charge and discharge time of the domain is neglected. An estimate of these times is given in the Appendix, and it is shown that the efficiency theory should be relevant to operation with diodes for whichnL gg 10^{12}cm-2. The theory may also describe certain types of "LSA mode" operation. View full abstract»

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  • Two-dimensional Gunn-domain dynamics

    Page(s): 748 - 758
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    In two-dimensional bulk GaAs devices, each small segment of a high-field domain can be considered to move normal to its front, with a velocity equal to that of a one-dimensional domain having the same domain potential. Using this simple model, an equation describing the domain shape in two-dimensional samples was obtained. When edge nucleation effects are taken into account, the solution of the equation provides a good explanation for most of the domain motions observed experimentally in various samples of non-uniform shape. The experimental observations were made using a resistive probe. The probe experiments enable one to visualize how domains behave in devices with sudden or gradual changes in width, with sharp or gradual bends, and with multiple terminals. In an Appendix, the simple model of two-dimensional domains is justified using a perturbation theory. View full abstract»

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  • Modulation of space-charge-limited current flow in insulated-gate field-effect tetrodes

    Page(s): 759 - 766
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    The electrical characteristics of n-channel depletion-type and p-channel enhancement-type space-charge-limited tetrodes are presented. The devices are derived from the MOSFET structure and are fabricated on nearly intrinsic silicon substrates with very small channel lengths. In both structures, the current flowing between drain and source can be modulated by either of two high-impedance control terminals. The dominant conduction mechanism is space-charge-limited current flow, and the observed current-voltage characteristics of each device follow the Mott and Gurney relationship at high current levels. View full abstract»

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  • ZnSe—Ge heterojunction transistors

    Page(s): 766 - 774
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    Heterojunction transistors are described consisting of n ZnSe epitaxially deposited on Ge base-collector junctions. The low-frequency common-emitter current gain is analyzed in terms of the injection efficiency and base transport factor. The injection efficiency is limited by interface recombination and capture-tunneling components in the emitter current, and the transport factor by low base lifetimes resulting from lattice and thermal mismatches involved with heterojunctions. Experimentally, the gain is constant at low injection levels and varies as a fractional power of the current at higher levels. The gain improves with decreased base widths and higher fields. Increasing the emitter resistivity reduces the capture-tunneling component in the emitter current, and increases the gain. Relatively small temperature dependence is observed, with β decreasing slightly at lower temperatures. View full abstract»

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  • Charge control approach to the small signal theory of field-effect devices

    Page(s): 775 - 781
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    The operation of a field-effect device is described in terms of the total charge in the channel region. The analysis is primarily developed for the small-signal operation for which the charge control equations are linear and have constant coefficients. The complete expressions for the small signal admittance parameters are obtained in both the linear and the pinch-off regions leading directly to equivalent circuits. It is believed that the charge control approach not only simplifies the mathematics involved, but provides new insights into device operation as well. View full abstract»

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  • The tunistor: A mechanical resonator for microcircuits

    Page(s): 781 - 787
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    The tunistor is a new mechanically resonant device which utilizes piezoelectric film transducers and a free-free flexural mode of resonance. Monolithic silicon tunistors have been demonstrated at frequencies up to 500 kHz with Qs to several thousand and temperature coefficients of frequency of 40 ppm/°C or less. Frequencies to several MHz should be feasible, and extensional modes should permit the frequency range to be increased even further. Metal tunistors which are compatible with hybrid microcircuits have been demonstrated down to several hundred Hz, and may be made relatively immune to external vibration. This paper describes the results obtained to date, and the technique used to fabricate tunistors. View full abstract»

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  • Dc flow considerations for crossed-field acoustic amplifiers and other solid-state traveling-wave devices

    Page(s): 787 - 797
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    The direct Current flow in two simple device structures used for crossed-field, traveling-wave devices is analyzed, and some properties of the flow which can affect the RF performance are studied in detail. The results show nonuniform flow to be significant only in localized regions, which can be made small by a proper choice of electrode and sample geometry. Approximate formulas are derived for estimating the important flow parameters of interest in specific applications. As an example, the effect of nonuniform flow on the acoustic amplifier is estimated. The deflection and refraction of a shear-wave acoustic beam in InSb at 77°K is found to be negligible, but the gain is reduced appreciably for large µB0. Considerations entering into device design, such as heat sinking and the provision of an RF circuit, are also discussed with regard to an optimum choice of electrode configuration for a rectangular device. View full abstract»

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  • Air core coils for deflecting micron-size electron beams

    Page(s): 798 - 803
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    Bobbin-type air core coils have been designed and experimentally evaluated for astigmatic properties in line scan operation over deflection angles of ± 20°. The approximate design technique is successful in specifying the proper operating focal distance when this is comparable to the coil length. Line fields in excess of 20 000 spot diameters have been measured using a 10 kV beam having a 5 × 10-3radian convergence half-angle. View full abstract»

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  • A further contribution to the theory of electrostatic focusing

    Page(s): 803 - 812
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    An attempt has been made to obtain an accurate analytical solution to the equation of motion of an electron in a periodic electrostatic field. It has been shown that the equation is of the inhomogeneous Mathieu type. The general solution has been obtained and the effect of various parameters is discussed. It is hoped that this solution will find applications in many problems of particle dynamics. View full abstract»

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  • Some aspects of circuit power dissipation in high power CW helix traveling-wave tubes, part I: General theory

    Page(s): 813 - 820
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    This paper describes the basic theory underlying calculations of the thermal behavior of helix-type slow wave circuits used in high power traveling-wave tubes. Typically, the helix is supported by means of three ceramic rods in a metal shell with the helix brazed to the rods. At the highest power levels the support rods are also brazed to the tube shell. The results of calculations on specific structures are presented which show the use of different support rod and helix materials, of beam interception, and of brazing the support rods to the shell. Of particular interest is the conclusion that the temperature difference between the hottest and coldest parts of the helix can be significantly larger than the temperature drop across the support rods when using high thermal conductivity ceramic materials brazed to the tube shell. View full abstract»

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  • Some aspects of circuit power dissipation in high power CW helix traveling-wave tubes, part II: Scaling laws

    Page(s): 821 - 826
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    This paper extends the basic theory of the thermal behavior or helix-type slow wave circuits described in Part I [1] to show the effect of scaling to higher frequencies. The differences in the scaling laws which result from the alternative assumptions of constant beam voltage or constant beam perveance are discussed, and a simplified formulation permitting the thermal behavior to be described in terms of universal curves is presented. View full abstract»

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  • The positively tapered traveling-wave tube

    Page(s): 827 - 828
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    A new and unexpected concept of TWT circuit modification which results in high basic beam and depressed collector efficiencies is described. The test results which are presented disclose that 50 percent depressed collector efficiency has been achieved over a 10 per cent bandwidth, and that maxima of 42 and 52 percent, respectively, of beam and depressed collector efficiency have been measured at spot frequencies. The tube which produced these results contained a single continuous helix tapered at the output end so that the phase velocity of the fundamental circuit wave was increased. View full abstract»

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  • Small-signal impedance of gold-doped P+-N-N+silicon diodes

    Page(s): 828 - 830
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    Experimental results of impedance measurements on a long-base, gold-doped silicon diode show a substantial inductive effect. Various terminal characteristics are given and discussed with respect to possible contributing mechanisms. View full abstract»

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  • [Back cover]

    Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology