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IEEE Transactions on Electron Devices

Issue 9 • Date Sept. 1969

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1969, Page(s): c1
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    Freely Available from IEEE
  • High-efficiency operation of a Gunn oscillator in the domain mode

    Publication Year: 1969, Page(s):735 - 748
    Cited by:  Papers (20)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1416 KB)

    An examination of the problem of obtaining high-efficiency operation of a Gunn oscillator is given in this paper. The results are based on an assumed form of I-V characteristic of the Gunn diode, the ideal voltage and current waveforms being found for high-efficiency operation. The theory for a square wave of current through and voltage across the diode is worked out in detail and shown to predict... View full abstract»

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  • Two-dimensional Gunn-domain dynamics

    Publication Year: 1969, Page(s):748 - 758
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    In two-dimensional bulk GaAs devices, each small segment of a high-field domain can be considered to move normal to its front, with a velocity equal to that of a one-dimensional domain having the same domain potential. Using this simple model, an equation describing the domain shape in two-dimensional samples was obtained. When edge nucleation effects are taken into account, the solution of the eq... View full abstract»

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  • Modulation of space-charge-limited current flow in insulated-gate field-effect tetrodes

    Publication Year: 1969, Page(s):759 - 766
    Cited by:  Papers (18)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (752 KB)

    The electrical characteristics of n-channel depletion-type and p-channel enhancement-type space-charge-limited tetrodes are presented. The devices are derived from the MOSFET structure and are fabricated on nearly intrinsic silicon substrates with very small channel lengths. In both structures, the current flowing between drain and source can be modulated by either of two high-impedance control te... View full abstract»

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  • ZnSe—Ge heterojunction transistors

    Publication Year: 1969, Page(s):766 - 774
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (936 KB)

    Heterojunction transistors are described consisting of n ZnSe epitaxially deposited on Ge base-collector junctions. The low-frequency common-emitter current gain is analyzed in terms of the injection efficiency and base transport factor. The injection efficiency is limited by interface recombination and capture-tunneling components in the emitter current, and the transport factor by low base lifet... View full abstract»

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  • Charge control approach to the small signal theory of field-effect devices

    Publication Year: 1969, Page(s):775 - 781
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    The operation of a field-effect device is described in terms of the total charge in the channel region. The analysis is primarily developed for the small-signal operation for which the charge control equations are linear and have constant coefficients. The complete expressions for the small signal admittance parameters are obtained in both the linear and the pinch-off regions leading directly to e... View full abstract»

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  • The tunistor: A mechanical resonator for microcircuits

    Publication Year: 1969, Page(s):781 - 787
    Cited by:  Papers (4)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (888 KB)

    The tunistor is a new mechanically resonant device which utilizes piezoelectric film transducers and a free-free flexural mode of resonance. Monolithic silicon tunistors have been demonstrated at frequencies up to 500 kHz with Qs to several thousand and temperature coefficients of frequency of 40 ppm/°C or less. Frequencies to several MHz should be feasible, and extensional modes should permi... View full abstract»

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  • Dc flow considerations for crossed-field acoustic amplifiers and other solid-state traveling-wave devices

    Publication Year: 1969, Page(s):787 - 797
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1016 KB)

    The direct Current flow in two simple device structures used for crossed-field, traveling-wave devices is analyzed, and some properties of the flow which can affect the RF performance are studied in detail. The results show nonuniform flow to be significant only in localized regions, which can be made small by a proper choice of electrode and sample geometry. Approximate formulas are derived for e... View full abstract»

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  • Air core coils for deflecting micron-size electron beams

    Publication Year: 1969, Page(s):798 - 803
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    Bobbin-type air core coils have been designed and experimentally evaluated for astigmatic properties in line scan operation over deflection angles of ± 20°. The approximate design technique is successful in specifying the proper operating focal distance when this is comparable to the coil length. Line fields in excess of 20 000 spot diameters have been measured using a 10 kV beam having ... View full abstract»

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  • A further contribution to the theory of electrostatic focusing

    Publication Year: 1969, Page(s):803 - 812
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    An attempt has been made to obtain an accurate analytical solution to the equation of motion of an electron in a periodic electrostatic field. It has been shown that the equation is of the inhomogeneous Mathieu type. The general solution has been obtained and the effect of various parameters is discussed. It is hoped that this solution will find applications in many problems of particle dynamics. View full abstract»

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  • Some aspects of circuit power dissipation in high power CW helix traveling-wave tubes, part I: General theory

    Publication Year: 1969, Page(s):813 - 820
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    This paper describes the basic theory underlying calculations of the thermal behavior of helix-type slow wave circuits used in high power traveling-wave tubes. Typically, the helix is supported by means of three ceramic rods in a metal shell with the helix brazed to the rods. At the highest power levels the support rods are also brazed to the tube shell. The results of calculations on specific str... View full abstract»

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  • Some aspects of circuit power dissipation in high power CW helix traveling-wave tubes, part II: Scaling laws

    Publication Year: 1969, Page(s):821 - 826
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    This paper extends the basic theory of the thermal behavior or helix-type slow wave circuits described in Part I [1] to show the effect of scaling to higher frequencies. The differences in the scaling laws which result from the alternative assumptions of constant beam voltage or constant beam perveance are discussed, and a simplified formulation permitting the thermal behavior to be described in t... View full abstract»

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  • The positively tapered traveling-wave tube

    Publication Year: 1969, Page(s):827 - 828
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    A new and unexpected concept of TWT circuit modification which results in high basic beam and depressed collector efficiencies is described. The test results which are presented disclose that 50 percent depressed collector efficiency has been achieved over a 10 per cent bandwidth, and that maxima of 42 and 52 percent, respectively, of beam and depressed collector efficiency have been measured at s... View full abstract»

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  • Small-signal impedance of gold-doped P+-N-N+silicon diodes

    Publication Year: 1969, Page(s):828 - 830
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    Experimental results of impedance measurements on a long-base, gold-doped silicon diode show a substantial inductive effect. Various terminal characteristics are given and discussed with respect to possible contributing mechanisms. View full abstract»

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  • [Back cover]

    Publication Year: 1969, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
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