IEEE Transactions on Electron Devices

Issue 5 • May 1969

Filter Results

Displaying Results 1 - 19 of 19
  • [Front cover and table of contents]

    Publication Year: 1969, Page(s): c1
    Request permission for commercial reuse | |PDF file iconPDF (133 KB)
    Freely Available from IEEE
  • Change in editorial board

    Publication Year: 1969, Page(s): 417
    Request permission for commercial reuse | |PDF file iconPDF (151 KB)
    Freely Available from IEEE
  • A bulk semiconductor imaging device for millimeter and submillimeter radiation

    Publication Year: 1969, Page(s):419 - 424
    Cited by:  Papers (4)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (512 KB)

    A device is described whereby millimeter or submillimeter wave images obtained from reflecting targets can be converted to visible displays providing a cathode ray tube presentation. The principle of the technique is based on the fact that transmitted power at these wavelengths can be modulated by a semiconductor panel in which the bulk conductivity is changed by electronic means. Experimental dat... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The saturated photovoltage of a p-n junction

    Publication Year: 1969, Page(s):424 - 427
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (464 KB)

    This paper explores the relationship between the energy-gap voltage of a p-n junction and the saturation value of the open-circuit photovoltage produced by high-intensity illumination. It is shown that high excess-carrier concentrations in the quasi-neutral regions are accompanied by significant open-circuit drops in the quasi-Fermi voltages of both carriers in these regions. When these drops are ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High-frequency FET noise parameters and approximation of the optimum source admittance

    Publication Year: 1969, Page(s):428 - 431
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (368 KB)

    High-frequency noise parameters of junction FETs and MOSFETs have been determined experimentally. It is shown that the usual noise specifications given in present-day data sheets are not sufficient to describe the noise behavior. A very important noise parameter is the source admittance. However, the exact evaluation of the optimum source admittance, which yields the minimum noise figure, is very ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Thermal filaments in vanadium dioxide

    Publication Year: 1969, Page(s):432 - 437
    Cited by:  Papers (9)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (624 KB)

    A relatively simple thin-film structure using vanadium dioxide is analyzed in detail to show that high-temperature, low-resistivity filaments can exist in VO2under appropriate electrical bias. These filaments will dominate both the static and dynamic electrical behavior of the structure, giving rise to V-I characteristics similar to those expected from materials exhibiting current-contr... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A method for heat flow resistance measurements in avalanche diodes

    Publication Year: 1969, Page(s):438 - 444
    Cited by:  Papers (35)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (712 KB)

    Avalanche transit time oscillators are operating at power densities approaching 106W/cm2, unprecedented in semiconductor device history. At such power densities, heat flow resistance problems at the interface between the flip-chip mounted silicon chips and the metal substrate, as well as between the package and the heat sink, are extremely critical. This paper describes a new... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A technique for directly plotting the inverse doping profile of semiconductor wafers

    Publication Year: 1969, Page(s):445 - 449
    Cited by:  Papers (17)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (448 KB)

    A new technique for plotting doping profiles of semiconductor wafers is described. This technique involves driving a Schottky diode deposited on the surface with a small constant RF current (a few hundred microamperes at 5 MHz). The depth of the depletion layer is varied by changing the dc bias, but this is the only role of the dc voltage. The inverse doping profile n-1(x) is obtained b... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Barrier height diminution in Schottky diodes due to electrostatic screening

    Publication Year: 1969, Page(s):450 - 454
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (576 KB)

    Electrostatic screening in the metal contact of a Schottky (metal-semiconductor) diode is shown to influence the calculated electrical characteristics of the diode. A thin space-charge layer is formed at the surface of the metal contact by capacitively induced free charges, This results in a voltage dependent diminution of the barrier height of the diode that increases in magnitude with increasing... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High injection in epitaxial transistors

    Publication Year: 1969, Page(s):455 - 457
    Cited by:  Papers (48)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (269 KB)

    An analysis of base widening and the current dependence of the cutoff frequency fThas been given previously [1]. The analysis is approximate and is based on the location of the edges of transition regions. Definition of transition regions becomes problematic in transistors having nonuniform base doping and for high-current densities. Such difficulties are avoided in this paper by use of... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Forward current—Voltage and switching characteristics of p+-n-n+(epitaxial) diodes

    Publication Year: 1969, Page(s):458 - 467
    Cited by:  Papers (27)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (896 KB)

    The forward-biased current-voltage and forward-to-reverse biased switching characteristics of p+-n-n+epitaxial diodes are investigated. The manner in which the n-n+junction affects the flow of injected minority carriers in the epitaxial region is characterized by a leakage parameter a. Experimentally, for diodes with epitaxial film widths much less than a diffusion... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Linear operation of a p-n-p-n tetrode

    Publication Year: 1969, Page(s):468 - 478
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (832 KB)

    At the present time all p-n-p-n devices are used exclusively as switches. The p-n-p-n tetrode however, is also capable of operating as a linear amplifier. A model describing the operation of such a device as a semiconductor tetrode amplifier is presented. The equations characterizing this model are based on the physical structure of a commercially available silicon planar p-n-p-n tetrode; they are... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Emission of visible radiation from extended plasmas in silicon diodes during second breakdown

    Publication Year: 1969, Page(s):479 - 485
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (744 KB)

    Thin film silicon-on-sapphire diodes have been reverse biased into second breakdown and the formation of a filament has been observed between the anode and cathode. This filamentary conduction was accompanied by emission of visible radiation, the light being much more intense than that associated with avalanche or microplasma emission. The filamentary emission appeared to be associated with both t... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Small-signal gain calculations for electrostatically focused klystrons

    Publication Year: 1969, Page(s):486 - 489
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (280 KB)

    The small-signal gain of an electrostatically focused klystron (ESFK) will be different from that of a conventional klystron because the drift tube is not dc field free and the RF bunching process is altered. A method for calculating the small-signal gain of an ESFK, based on a space-charge wave analysis of the lens cell, is presented. Calculated and measured values of small-signal gain for severa... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Gunn effect bibliography supplement

    Publication Year: 1969, Page(s):490 - 494
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (536 KB)

    This list of references has been prepared as a supplement to our "Gunn Effect Bibliography," which appeared in this Transactions, vol. ED-15, pp. 777-788, October 1968. These references represent 1968 articles that have been published since the original bibliography was submitted, as well as additional earlier articles. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The electronic tunable Gunn-diode oscillator

    Publication Year: 1969, Page(s):494 - 496
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (296 KB)

    The propagation coefficient of a microstrip line, into which a two-valley semiconducator is insterted instead of the dielectric layer of the conventional microstrip line, is analyzed. The analytical results show the feasibility of making an electronically tunable Gunn-didode oscillator. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Low-level response of phototransistors operating in the charge storage mode

    Publication Year: 1969, Page(s):496 - 497
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (240 KB)

    A formula is derived relating the peak output voltage of the phototransistor operating in the charge storage mode to the average illumination current for low signal levels. This formula reveals the non-linearity in response apparent at low signal levels caused by the presence of the base-emitter junction. Sensitivity formulas are derived which enable the calculation of uniformity in response from ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Step-like shifts in the voltage—Current characteristics of power thyristors and their effect on transient thermal impedance determinations

    Publication Year: 1969, Page(s):497 - 500
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (400 KB)

    In the course of determining the transient thermal impedance of power thyristors, step-like shifts are often observed in the temperature-sensitive voltage characteristic used to estimate the virtual junction temperature of the device. This correspondence describes investigations which have shown that these step-like shifts are in fact spontaneous voltage transients which are highly sensitive funct... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1969, Page(s): c4
    Request permission for commercial reuse | |PDF file iconPDF (650 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it