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IEEE Transactions on Electron Devices

Issue 3 • Date March 1969

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Displaying Results 1 - 11 of 11
  • [Front cover and table of contents]

    Publication Year: 1969, Page(s): c1
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    Freely Available from IEEE
  • Transport of noise fluctuations in convergent flow crossed-field electron guns

    Publication Year: 1969, Page(s):261 - 277
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1472 KB)

    The transport of noise fluctuations in convergent flow or so-called Kino-type crossed-field electron guns is investigated in terms of a two-dimensional computer simulation of the gun by the well-known Monte Carlo method for studying stochastic processes. The exact electrode configurations are simulated in the computer memory. After sufficient time has elapsed for the electron flow to achieve a ste... View full abstract»

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  • Harmonic generation in TR tubes

    Publication Year: 1969, Page(s):278 - 283
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (592 KB)

    Spurious harmonic power generated in TR tubes was investigated to determine if intersystem interference problems exist and to provide design criteria for controlling spurious signal generation. Harmonic power radiated from typical TR tubes was measured as a function of incident power, pressure, and geometry for discharges in chlorine, water vapor, hydrogen, nitrogen, and argon. Harmonic power decr... View full abstract»

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  • An electrostatic image tube with planar photocathode

    Publication Year: 1969, Page(s):284 - 292
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (928 KB)

    It has been possible to flatten the electron image of a planar photocathode sufficiently well to obtain images with good center-to-edge focus on a planar screen. The essential element in the new tube is a spherical mesh with strong curvature. This mesh serves the dual function of a prefocusing lens in the approach space, and a field-flattening lens in the image space following. Additional advantag... View full abstract»

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  • Multiple-electrode triggered vacuum gaps

    Publication Year: 1969, Page(s):293 - 296
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    Since the design criteria for reliable operation of a single gap at 300 kV are not well known, multiple-electrode triggered vacuum gaps were constructed. A six-gap structure was initially studied. It had excessive time delay in the initiation of the arc. Subsequently, a three-gap structure was built. Time delays in initiation of the arc were satisfactory, but the rate of rise of current was slow. ... View full abstract»

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  • Charge pumping in MOS devices

    Publication Year: 1969, Page(s):297 - 302
    Cited by:  Papers (296)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (552 KB)

    Gate pulses applied to MOS transistors were found to stimulate a net flow of charge into the substrate. Investigation of this effect revealed a charge-pumping phenomeonon in MOS gate-controlled-diode structures. A first-order theory is given, whereby the injected charge is separated into two components. One component involves coupling via fast surface states at the Si-SiO2interface unde... View full abstract»

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  • Frequency response of spontaneous mode electroluminescent diode at low injection levels

    Publication Year: 1969, Page(s):303 - 309
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    The expression for the emitted photon flux of a non coherent electroluminescent diode of flat geometry is determined. Analysis covers both steady-state and transient response; the latter is related to the area and edge emission, respectively, and found to be limited by the diode impedance, by transit time effects in the p and n regions, and by radiation absorption losses. The possibility of an inc... View full abstract»

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  • Efficiency calculations of heterojunction solar energy converters

    Publication Year: 1969, Page(s):309 - 312
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    A theoretical evaluation of the maximum attainable solar conversion efficiencies of p-n and n-p heterodiodes is presented. The calculations are made for some of the theoretically efficient and feasible heterojunctions of IV and III-V group semiconductors. In these calculations, the Anderson diffusion model is used and carrier concentrations of the two semiconductors are so chosen that photo-carrie... View full abstract»

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  • Cutoff frequency of punch-through diodes

    Publication Year: 1969, Page(s):313 - 314
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (200 KB)

    The cutoff frequency of punch-through diodes has been derived in a form which includes the dependence of bias voltage and extrinsic series resistance. The conditions for high cutoff frequency are described. Lower cutoff frequencies are predicted for thin epitaxial diodes. View full abstract»

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  • An ac-primed quartz—chlorine stage for X-band receiver protectors

    Publication Year: 1969, Page(s):314 - 316
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    A gas discharge waveguide limiter in X-band with relatively fast recovery characteristics is discussed. The problem of supplying priming electrons at a sufficiently high rate to the microwave gap (to ensure first pulse breakdown at the beginning of the pulse) in a halogen-gas quartz system is overcome by using an ac ignitor. The ac ignitor voltage is coupled through the gas reservoir wall to maint... View full abstract»

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  • [Back cover]

    Publication Year: 1969, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Politecnico di Torino,
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