By Topic

Electron Devices, IEEE Transactions on

Issue 3 • Date March 1969

Filter Results

Displaying Results 1 - 11 of 11
  • [Front cover and table of contents]

    Page(s): c1
    Save to Project icon | Request Permissions | PDF file iconPDF (112 KB)  
    Freely Available from IEEE
  • Transport of noise fluctuations in convergent flow crossed-field electron guns

    Page(s): 261 - 277
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1472 KB)  

    The transport of noise fluctuations in convergent flow or so-called Kino-type crossed-field electron guns is investigated in terms of a two-dimensional computer simulation of the gun by the well-known Monte Carlo method for studying stochastic processes. The exact electrode configurations are simulated in the computer memory. After sufficient time has elapsed for the electron flow to achieve a steady-state condition 2000 additional time intervals are computed and then a statistical analysis is made of the fluctuation quantities. Six emission spots are considered on a finite-width cathode. The analysis is facilitated by the development of a rapid method for the solution of Poisson's equation (two-dimensional). Of particular interest in the results is the improved laminarity of the flow in the KG-M gun and the fact that there is significant space-charge smoothing throughout the gun region in both Kino-type guns. Of greater significance and as yet not explainable is the fact that Ψ versus ωct has local peaks when the space-charge density, which is spatially varying, passes through the Brillouin value ( \omega _{p}-\omega _{c} for this condition). This knowledge could be profitably used in deciding on the location of the gun exit plane. The fact that the laminarity of the flow is sensitive to slight changes in the electric field near the cathode indicates that an absolute evaluation of the noise performance of KG-A and KG-M guns is difficult and may only be obtained through appropriate experiments. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Harmonic generation in TR tubes

    Page(s): 278 - 283
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (592 KB)  

    Spurious harmonic power generated in TR tubes was investigated to determine if intersystem interference problems exist and to provide design criteria for controlling spurious signal generation. Harmonic power radiated from typical TR tubes was measured as a function of incident power, pressure, and geometry for discharges in chlorine, water vapor, hydrogen, nitrogen, and argon. Harmonic power decreased by about 20 dB for each decade increase in total pressure in the 0.2 to 20 torr range. Conversion loss varied from 28 to 70 dB. Harmonic power was radiated in a series of resonant peaks which varied with incident power and pressure. TR tubes meet the desired requirements for spurious radiation of -40 dBm/kHz for incident pulse widths less than 1.0 µs when filled to total pressures in the usual 10 to 15 torr range. At pulse widths greater than about 10 µs it becomes necessary to suppress spurious radiation by either filtering or harmonic trapping to reduce intersystem interference. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An electrostatic image tube with planar photocathode

    Page(s): 284 - 292
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (928 KB)  

    It has been possible to flatten the electron image of a planar photocathode sufficiently well to obtain images with good center-to-edge focus on a planar screen. The essential element in the new tube is a spherical mesh with strong curvature. This mesh serves the dual function of a prefocusing lens in the approach space, and a field-flattening lens in the image space following. Additional advantages include an incidental correction of pin-cushion geometry and improved high voltage stability. Image resolution of over 16 line pairs/millimeter has been realized with meshes as are available at present. Further progress is entirely possible pending future developments in the technology of high-resolution meshes. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Multiple-electrode triggered vacuum gaps

    Page(s): 293 - 296
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (368 KB)  

    Since the design criteria for reliable operation of a single gap at 300 kV are not well known, multiple-electrode triggered vacuum gaps were constructed. A six-gap structure was initially studied. It had excessive time delay in the initiation of the arc. Subsequently, a three-gap structure was built. Time delays in initiation of the arc were satisfactory, but the rate of rise of current was slow. In addition, voltage hold-off capability was marginal. To improve these characteristics, a low pressure of hydrogen, 7 to 25 mtorr, was added. Considerably improved firing characteristics and reliable voltage hold-off at 320 kV were obtained. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Charge pumping in MOS devices

    Page(s): 297 - 302
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (552 KB)  

    Gate pulses applied to MOS transistors were found to stimulate a net flow of charge into the substrate. Investigation of this effect revealed a charge-pumping phenomeonon in MOS gate-controlled-diode structures. A first-order theory is given, whereby the injected charge is separated into two components. One component involves coupling via fast surface states at the Si-SiO2interface under the gate, while the other involves recombination of free inversion-layer charge into the substrate. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Frequency response of spontaneous mode electroluminescent diode at low injection levels

    Page(s): 303 - 309
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (712 KB)  

    The expression for the emitted photon flux of a non coherent electroluminescent diode of flat geometry is determined. Analysis covers both steady-state and transient response; the latter is related to the area and edge emission, respectively, and found to be limited by the diode impedance, by transit time effects in the p and n regions, and by radiation absorption losses. The possibility of an increase of both the external quantum efficiency and modulation cutoff frequency is discussed applying the derived results to the GaAs electroluminescent diode. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Efficiency calculations of heterojunction solar energy converters

    Page(s): 309 - 312
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (336 KB)  

    A theoretical evaluation of the maximum attainable solar conversion efficiencies of p-n and n-p heterodiodes is presented. The calculations are made for some of the theoretically efficient and feasible heterojunctions of IV and III-V group semiconductors. In these calculations, the Anderson diffusion model is used and carrier concentrations of the two semiconductors are so chosen that photo-carriers generated do not have to surmount any junction barrier. The calculated efficiencies are compared with the reported experimental values and with the conventional Si photovoltaic cell. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Cutoff frequency of punch-through diodes

    Page(s): 313 - 314
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (200 KB)  

    The cutoff frequency of punch-through diodes has been derived in a form which includes the dependence of bias voltage and extrinsic series resistance. The conditions for high cutoff frequency are described. Lower cutoff frequencies are predicted for thin epitaxial diodes. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An ac-primed quartz—chlorine stage for X-band receiver protectors

    Page(s): 314 - 316
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (360 KB)  

    A gas discharge waveguide limiter in X-band with relatively fast recovery characteristics is discussed. The problem of supplying priming electrons at a sufficiently high rate to the microwave gap (to ensure first pulse breakdown at the beginning of the pulse) in a halogen-gas quartz system is overcome by using an ac ignitor. The ac ignitor voltage is coupled through the gas reservoir wall to maintain a weak discharge whose free electrons diffuse toward the microwave gap. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Page(s): c4
    Save to Project icon | Request Permissions | PDF file iconPDF (508 KB)  
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego