IEEE Transactions on Electron Devices

Issue 1 • Jan. 1969

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Displaying Results 1 - 24 of 24
  • [Front cover and table of contents]

    Publication Year: 1969, Page(s): c1
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    Freely Available from IEEE
  • Magnetic compression of axially symmetric Brillouin-focused electron beams

    Publication Year: 1969, Page(s):1 - 5
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (544 KB)

    A study has been made of high-current density Brillouin-focused electron beams formed with magnetic compression. Analysis of the problem was by numerical calculation of electron trajectories using a digital computer. Electrostatic field data were measured using a resistance network analog. The effect of the magnetic field was calculated as an equivalent potential. An experimental system based on t... View full abstract»

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  • A 26- to 40-GHz fast-acting plasma waveguide switch

    Publication Year: 1969, Page(s):6 - 18
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (912 KB)

    A fast-acting broad-band plasma waveguide switch has been developed which provides greater than 60-dB isolation and less than 0.25-dB cold loss over the 26-to 40-GHz frequency range. Switching times are under 200 ns, and the actuating trigger signal is a 150-volt 0.5-µs pulse from a high-impedance source. Geometrical enhancement of plasma density by employing metallic convergence cones is use... View full abstract»

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  • Microwave harmonic generation in a plasma capacitor

    Publication Year: 1969, Page(s):18 - 29
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1216 KB)

    Microwave harmonic generation in a plasma capacitor is investigated both theoretically and experimentally. Deficiencies of previous harmonic generation theories are pointed out and a nonlinear one-dimensional mathematical model, which includes the reactive nonlinearities due to the spatial variation of E, is developed. This nonlinear plasma capacitor model indicates that under certain electron-den... View full abstract»

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  • In situ amplification of a signal stored upon a dielectric surface

    Publication Year: 1969, Page(s):30 - 35
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (704 KB)

    Electrostatic latent image development (ELID) is a method of amplifying storage tube information in which electronic charge patterns stored upon a target may be enhanced by secondary emission upon the incidence of a flood beam. Experimental evidence is given for this effect, using the WX-4384 electrostatic slow scan vidicon and the WX-5074 Optechon storage camera tube, showing measured gains great... View full abstract»

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  • A silicon MOS magnetic field transducer of high sensitivity

    Publication Year: 1969, Page(s):35 - 39
    Cited by:  Papers (39)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (416 KB)

    A structure has been devised which converts magnetic flux density change to a change in output current. The structure is essentially a P-channel MOST with the drain diffusion split into two halves. A magnetic field normal to the silicon surface deflects device current towards one half-drain. By operating the MOST in the "pinched-off" mode (VDS> VGS-VT) the outpu... View full abstract»

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  • Current gain and cutoff frequency falloff at high currents

    Publication Year: 1969, Page(s):39 - 57
    Cited by:  Papers (66)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1664 KB)

    A theoretical and experimental study of the effects of high-level injection of carriers into a reverse-biased collector-base junction has been performed. Two models which describe the high-current behavior of the junction space-charge region are discussed. The first deals with the formation of a current-induced base region at space-charge-limited current densities. The second model assumes that tw... View full abstract»

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  • p-n junction—Schottky barrier hybrid diode

    Publication Year: 1969, Page(s):58 - 63
    Cited by:  Papers (32)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (632 KB)

    A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and reverse electrical characteristics are in excellent agreement with simple theory, and that the excess noise normally found in passivated Schottky barrier diodes has been significantly reduced. The inf... View full abstract»

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  • Large-signal analysis of a silicon Read diode oscillator

    Publication Year: 1969, Page(s):64 - 77
    Cited by:  Papers (1340)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1064 KB)

    This paper presents theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode. A simplified theory is employed to obtain a starting design. This design is then modified to achieve higher efficiency operation as specific device limitations are reached in large-signal (computer) operation. Self-consistent numerical solutions are obtaine... View full abstract»

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  • Frequency conversion in IMPATT diodes

    Publication Year: 1969, Page(s):78 - 87
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (776 KB)

    A large-signal model of the Read-type IMPATT diode has been used to analyze the frequency-mixing properties of the oscillating diode. The self-oscillating, two-port frequency converter is described in terms of its short-circuit admittance parameters. It is shown that in the proper circuit, parametric frequency conversion may result in a negative conductance at the input and output ports of the con... View full abstract»

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  • Theory of space-harmonic traveling-wave interactions in semiconductors

    Publication Year: 1969, Page(s):88 - 97
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (872 KB)

    Strong coupling can be obtained between slow space-charge waves in thin biased semiconductors and long-wavelength microwave fields, if the semiconductor is overlaid with an insulated periodic mosaic of tiny metal stripes. Microscopic field perturbations are represented by a set of slow space-harmonic waves traveling in opposite directions, with a standing-wave interference pattern which matches th... View full abstract»

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  • Analysis of the I(V) characteristics of p+-n-π-p+structures for the determination of hole velocity in silicon

    Publication Year: 1969, Page(s):98 - 101
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (401 KB)

    The method of obtaining the velocity field relation from theI(V)characteristics of p+-n-π-p+structures is analyzed using detailed numerical techniques and semiquantitative analytic descriptions. Rodriguez, Ruegg, and Nicolet (RRN) [1] have concluded from differential resistance measurements above punch-through that the hole velocity was saturated and gave 7.5 ... View full abstract»

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  • The realization of a GaAs—Ge wide band gap emitter transistor

    Publication Year: 1969, Page(s):102 - 107
    Cited by:  Papers (9)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (632 KB)

    The fabrication and properties of an n-GaAs emitter, p-Ge base, n-Ge collector transistor which possesses significant current gain is described, These GaAs wide band gap emitter transistors have shown incremental current gains near 15 when operated at current densities up to 3500 A/cm2. The doping level used in the base region was quite high (up to 5×1019/cm3i... View full abstract»

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  • Conductance of MOS transistors in saturation

    Publication Year: 1969, Page(s):108 - 113
    Cited by:  Papers (93)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (536 KB)

    The output conductance of MOS transistors operating in the saturation region is studied theoretically and experimentally. A simple physical model is described which accounts for the modification of the electric field in the drain depletion region near the Si-SiO2interface, due to the presence of the gate electrode. The saturation conductance is shown on the basis of this model to be a s... View full abstract»

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  • Characteristics of two-region saturation phenomena

    Publication Year: 1969, Page(s):113 - 116
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (361 KB)

    Diffused base bipolar transistors, especially high-voltage types, often exhibit two pronounced saturation regions. This paper elucidates the qualitative and quantitative features of this behavior which is due to conductivity modulation of the lightly doped collector region. The transport equations for ambipolar conduction in the collector region are solved with a minimum of simplifying assumptions... View full abstract»

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  • Investigation of current-gain temperature dependence in silicon transistors

    Publication Year: 1969, Page(s):117 - 124
    Cited by:  Papers (32)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (736 KB)

    This paper presents the results of an investigation of the factors influencing transistor current-gain temperature dependence. Phase one of the investigation demonstrated experimentally that current-gain temperature dependence is an inverse log function of the average active base resistivity. Devices were found to be less temperature sensitive with lighter base doping levels. Phase two of the inve... View full abstract»

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  • Design, fabrication, and characterization of a germanium microwave transistor

    Publication Year: 1969, Page(s):125 - 138
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1240 KB)

    This paper summarizes the design, fabrication, and characterization of a p-n-p planar epitaxial germanium transistor for use as an amplifier in the 1-to 4-GHz frequency range and as a high-speed switch. The analytical basis for the geometry and impurity profile arrived at in the development of this transistor is presented in conjunction with experimental measurements. It is shown that good agreeme... View full abstract»

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  • Relativistic beam-loading admittance

    Publication Year: 1969, Page(s): 139
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (83 KB)

    The expressions for the beam-loading admittance for relativistic electron beams in gridless klystron gaps is derived. Computer results show the values to be about twice those computed with nonrelativistic formulas foru_{0}/cnear 0.4. View full abstract»

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  • A slide rule for computing UFand the bulk doping from MIS-capacitor high-frequency C-V curves

    Publication Year: 1969, Page(s):140 - 147
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (278 KB)

    A slide rule has been developed for the rapid and accurate calculation of the normalized doping parameter UFand the bulk doping of silicon substrates from high-frequency MIS-capacitorC-Vdata. The slide rule can be employed for ambient temperatures from -20 to 100°C, and for a wide range of insulator thicknesses and dielectric constants. View full abstract»

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  • Theory of cylindrically symmetric unijunction transistors

    Publication Year: 1969, Page(s):147 - 149
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (320 KB)

    A general theory for near-intrinsic homogenous semiconductor material is extended to the base region of an ideal cylindrical-geometry unijunction transistor. The theory predicts static emitter characteristics for planar geometries with cylindrical symmetry. These predicted characteristics include the effects of drift, diffusion, and simple recombination, and qualitatively agree with experimental d... View full abstract»

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  • Frequency modulation of three-terminal Gunn devices by optical means

    Publication Year: 1969, Page(s):149 - 151
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (368 KB)

    The three-terminal Gunn device first reported by Petzinger et al. has been frequency modulated by shining light either on the n-type gallium arsenide or the p-n junction of the device. Different sensitivities are achieved in those two modes of operation. While the device was oscillating in the bias-circuit mode at about 500 MHz, frequency variations linearly dependent on the intensity of the light... View full abstract»

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  • A space-charge connected high-voltage silicon-controlled rectifier

    Publication Year: 1969, Page(s):151 - 153
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (416 KB)

    First Page of the Article
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  • Analysis of transistor ICBOexcess currents by gamma irradiation

    Publication Year: 1969, Page(s):153 - 154
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (224 KB)

    Excess ICBOcurrents on silicon planar transistors can be due to surface inversion layers over either the base or collector regions of the wafer. For n-p-n transistors, a collector inversion layer would be associated with a negative charge in the protective oxide over the silicon chip. On the other hand, a base inversion would be associated with a positive oxide charge. Since gamma irrad... View full abstract»

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  • [Back cover]

    Publication Year: 1969, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it