IEEE Transactions on Electron Devices

Issue 12 • Dec. 1968

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Displaying Results 1 - 16 of 16
  • [Front cover and table of contents]

    Publication Year: 1968, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1968, Page(s): 0
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  • Additional bibliography of metal—Insulator—Semiconductor studies

    Publication Year: 1968, Page(s):951 - 954
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (608 KB)

    A supplementary bibliography containing 158 papers in the field of metal-insulator-semiconductor theory and technology updates the bibliography previously published in this TRANSACTIONS. The classifications are as follows: MOS transistor behavior, physics, preparation of oxide layers, techniques for evaluating insulator layers, device fabrication technology, radiation effects, alternative material... View full abstract»

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  • IGFET Analysis through numerical solution of Poisson's equation

    Publication Year: 1968, Page(s):954 - 961
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (760 KB)

    Numerical techniques have been used to obtain the field distribution in IGFETs under saturated bias conditions. The numerical solution of Poisson's equation is obtained with fewer simplifying assumptions than are necessary to obtain an analytic solution. The numerical solution is used to calculate the change in channel length as bias values are varied. These changes are used to predict the voltage... View full abstract»

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  • Electron microprobe analysis of impurity heterogeneities in thermally grown silicon oxide

    Publication Year: 1968, Page(s):962 - 966
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (555 KB)

    The electron probe X-ray microanalyzer is a powerful tool for studying impurity distribution and motion in thin films. This analytical instrument is capable of detecting metallic impurities present in areas as small as 1 × 10-6mm2and in concentrations of greater than 1 × 1019atoms/cm3. The analysis requires no sample preparation and is essentia... View full abstract»

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  • Some observations on charge buildup and release in silicon dioxide irradiated with low energy electrons

    Publication Year: 1968, Page(s):966 - 973
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (622 KB)

    The positive charge buildup produced in silicon dioxide by low energy electrons (0 to 30 keV) has been investigated as a function of beam energy and oxide thickness. The induced charge, as evidenced by displacement of capacitance versus voltage plots, was found to be a function of the beam energy dissipated within the oxide in the vicinity of the oxide-silicon interface. The charge induced at a pa... View full abstract»

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  • Behavior of surface ions on semiconductor devices

    Publication Year: 1968, Page(s):973 - 979
    Cited by:  Papers (27)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (776 KB)

    A study of the effects and behavior of surface ions on planar semiconductor devices has extended the theoretical understanding to include the case in which the total mobile surface ion density is determined by the net surface ion density induced by the surface potential on the oxide. We describe a useful test structure for the measurement of surface ion behavior and cite its advantages. We have me... View full abstract»

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  • Avalanche drift instability in planar passivated p-n junctions

    Publication Year: 1968, Page(s):980 - 986
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (672 KB)

    Some factors which affect the breakdown voltage of planar passivatedp-njunctions and which influence breakdown drift instability are discussed. Experiments describing these phenomena are reported. An activation energy for walk-out recovery is given as approximately 0.35 eV. It is argued that charge motion parallel to and probably within the oxide-semiconductor interface is occurring. Ex... View full abstract»

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  • Temperature dependence of the saturation current of MOST's

    Publication Year: 1968, Page(s):987 - 989
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (305 KB)

    The saturation current ofn-enhancement silicon MOST's has been investigated as function of temperature. The results are in reasonable agreement with a simple theoretical expression which takes into account the field dependence of electron mobility. It is shown that the effective incremental mobility becomes fairly independent of temperature, and varies inversely proportional to the gate... View full abstract»

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  • Different mechanisms affecting the inversion layer transient response

    Publication Year: 1968, Page(s):990 - 997
    Cited by:  Papers (29)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (744 KB)

    The transient response of the MOS capacitance after the application of a large depleting voltage can be caused by three different mechanisms depending on the distribution of the electric field between the silicon and the oxide. The three different cases were distinguished by measurements of the temperature dependence and the voltage dependence of the relaxation behavior. Relaxation due to thermal ... View full abstract»

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  • Stress at the Si—SiO2interface and its relationship to interface states

    Publication Year: 1968, Page(s):998 - 1003
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (840 KB)

    The existence and origin of the interfacial stress between thermally grown silicon dioxide and single-crystal silicon are demonstrated. An oxide grown at about 1200°C will be under about 50 000 psi compressive stress. Interface state density is shown to be correlated to the magnitude of this compressive stress. An attempt is made to explain the correlation using a vacancy model for the interf... View full abstract»

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  • Surface charges and surface potential in silicon surface inversion layers

    Publication Year: 1968, Page(s):1003 - 1008
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (648 KB)

    The effect of interface charges on the channel conductance in MOS transistors has been investigated. It has been found that, by measuring the conductance as a function of temperature, it is possible to determine both the "fixed" interface charge which is independent of the surface potential and the charge trapped in surface states whose occupancy is a function of the surface potential. The charact... View full abstract»

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  • Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping

    Publication Year: 1968, Page(s):1009 - 1014
    Cited by:  Papers (78)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (576 KB)

    At low temperatures, charge exchange in all surface states except those close to the band edges can occur only by capture of free carriers because emission rates become very slow. If means are provided to supply minority carriers (either from an extended inversion layer or in a gate-controlled diode), pronounced charge-trapping effects can be observed. A ledge in the C-V characteristic is identifi... View full abstract»

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  • Multilayer Al2O3—SiO2combination (MASC) films as a partial H2diffusion barrier for use on Ge surfaces

    Publication Year: 1968, Page(s):1015 - 1018
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (416 KB)

    Multilayer Al2O3-SiO2combination (MASC) films are shown to be superior to SiO2films for Ge surface passivation during a forming-gas annealing cycle. The Al2O3is apparently much less permeable to H2than is SiO2. Hydrogen easily permeates SiO2, producing a high density of surface acceptor states on the... View full abstract»

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  • A silicon vidicon target with electronically variable light sensitivity and spectral response

    Publication Year: 1968, Page(s):1018 - 1023
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (536 KB)

    A silicon vidicon target structure is shown in which light sensitivity and spectral response are controlled by varying the band bending and depletion region depth at the light incident surface. Light sensitivity control ratios of over four orders of magnitude are demonstrated, making the new target suitable for use over a wide range of light conditions without the aid of a mechanical aperture. The... View full abstract»

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  • [Back cover]

    Publication Year: 1968, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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