IEEE Transactions on Electron Devices

Issue 11 • Nov. 1968

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  • [Front cover and table of contents]

    Publication Year: 1968, Page(s): c1
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    Freely Available from IEEE
  • The Gunn effect under imperfect cathode boundary conditions

    Publication Year: 1968, Page(s):819 - 837
    Cited by:  Papers (34)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1776 KB)

    The usual assumption in the theory of the Gunn effect of a well-behaved cathode is replaced by a more general set of boundary conditions adapted to the treatment of cathode contacts with some interface resistance. The treatment is in terms of a "control characteristic": that is, the current-field characteristic of the cathode interface itself. For contacts with an interface resistance, the control... View full abstract»

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  • Characterization and modeling of IMPATT oscillators

    Publication Year: 1968, Page(s):838 - 846
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    A method has been found for large-signal characterization of IMPATT diodes. Waveguides of different heights are used so that the effect on efficiency of load impedance at a fixed oscillation frequency can be observed. Experimental large-signal admittance plane plots for two p-n diodes operating in Ku-band are presented. A nonlinear phenomenological model of an IMPATT oscillator is developed which ... View full abstract»

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  • Computer calculations of avalanche-induced relaxation oscillations in silicon diodes

    Publication Year: 1968, Page(s):847 - 851
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    A digital computer program has been employed to study relaxation oscillations of a silicon p-i-n junction diode reverse-biased into avalanche. The computed plots of diode current and voltage versus time and of diode current versus diode voltage are in good agreement with those obtained experimentally by Hoefflinger. The electric field and charge density distributions across the junction are given ... View full abstract»

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  • Forward transient characteristics of gold-doped silicon p+-n-n+diodes

    Publication Year: 1968, Page(s):852 - 854
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (552 KB)

    The transient response of high-resistivity long-base low-lifetime p+-n-n+silicon diodes was examined experimentally. The diodes were doped with gold in order to reduce the minority carrier lifetime. Voltage oscillations were observed at different current levels. A large inductive effect was shown to exist when the diode was forward biased in a negative resistance region of th... View full abstract»

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  • Some limitations of the power output capability of VHF transistors

    Publication Year: 1968, Page(s):855 - 860
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    The power output capability of a VHF transistor is often limited by the RF saturation resistance. The resistance is set up by the constriction of the emitter current to the geometric edges of the device. The contributions of large current densities and high frequencies to current crowding are discussed in this paper. An extension of this discussion leads to an interpretation of the first-order eff... View full abstract»

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  • Nonlinear background-to-signal coupling in lateral photoeffects

    Publication Year: 1968, Page(s):860 - 864
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (406 KB)

    An analysis of the effect of a large spatially uniform time-independent background illumination on the lateral electric fields produced by a small space- and time-varying illumination of ap-njunction is presented. It is shown that a nonlinear coupling between background and signal results in a decrease in the signal electric fields. A general solution is obtained, and a solution in term... View full abstract»

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  • The electrostatic storage display tube

    Publication Year: 1968, Page(s):865 - 868
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    The electrostatic storage display tube is a special vacuum tube which combines the intrinsic charge-storage property of a dielectric membrane with the high-speed high-resolution capability of a newly developed electron gun and an independent optical system to provide bright high-contrast large-screen displays. Writing and recording functions have been completely separated from the actual display f... View full abstract»

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  • The performance characteristics of yttrium oxysulfide—A new red phosphor for color television

    Publication Year: 1968, Page(s):868 - 872
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    A new red phosphor, europium-activated yttrium oxy-sulfide, has a luminous efficiency 40 percent greater than that of yttrium vanadate. The use of this phosphor in the P22 color screen of color television receivers results in gun-current ratios which are close to unity when balancedfor a "white" color temperature of 9300°K The white-field luminance is increased 20 percent as compared to that ... View full abstract»

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  • Physical processes in duplexer discharges in chlorine and oxygen

    Publication Year: 1968, Page(s):873 - 882
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (997 KB)

    The high-power properties of the input-window discharge of a TR tube are analyzed in terms of the transmission and reflection coefficients of a thin plasma slab terminated by a low-intensity secondary gap discharge. Computer solutions were obtained for equations expressing the TR properties of arc loss, leakage power, recovery time, and phase shift as functions of collision frequency and electron ... View full abstract»

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  • Observations of multipactor in magnetrons

    Publication Year: 1968, Page(s):883 - 889
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    The process of back-bombardment of a magnetron cathode is considered as a single-surface multipactor. Experimental evidence is given, showing that this back-bombardment is concentrated in lines on the cathode surface, whose intensity is controlled by the RF voltage, and position by the dc voltage and magnetic field. The operating equations of a series-field magnetron are given, and experimentally ... View full abstract»

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  • Waves on an electron beam in vacuo and in a plasma

    Publication Year: 1968, Page(s):889 - 895
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    The problems of wave propagation on a cylindrical electron beam in vacuum and in a plasma background are examined in an exact treatment, i.e., from Maxwell's equations, including relativistic effects. It is shown that certain ambiguous features of the more usual nonrelativistic quasistatic analysis are thereby resolved. View full abstract»

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  • Liquid crystal media for electron beam recording

    Publication Year: 1968, Page(s):896 - 906
    Cited by:  Papers (4)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1704 KB)

    A new concept for a recording device providing real-time multicolor images is demonstrated using liquid crystal materials which exhibit color changes resulting from changes in the impressed electrostatic field. Signal intensities are presented as colors rather than as optical densities, with red corresponding to the lowest level and blue corresponding to the highest signal level. Using an appropri... View full abstract»

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  • A method of reducing the effects of anode aperture in high-perveance convergent electron guns

    Publication Year: 1968, Page(s):907 - 914
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    A new theoretical method of designing convergent electron guns of high perveance for use in microwave tubes is presented here. A differential equation which represents electron trajectories in a convergent electron stream has been deduced under certain approximations. Electron trajectories in an electron stream and boundary values along its boundary were numerically calculated by solving the diffe... View full abstract»

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  • Theory of periodic electrostatic focusing of electron beams

    Publication Year: 1968, Page(s):915 - 935
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1680 KB)

    A general theory of periodic electrostatic focusing structures in micowave tubes is presented. A general method for evaluating the properties of focusing systems is developed. The method is based on the use of the Action Function and is applicable to structures whose potential distribution can be found by the method of separable variables. It is shown that this approach can yield results similar t... View full abstract»

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  • Measurement of noise along electrostatically focused electron beams

    Publication Year: 1968, Page(s):936 - 938
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    Noise along periodic-electrostatically focused electron beams have been measured. The noise variation is periodic with the wavelength of the reduced plasma frequency. It is concluded that electrostatic focusing exhibits similar noise properties as magnetic focusing. View full abstract»

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  • High-efficiency X-band GaAs IMPATT diodes

    Publication Year: 1968, Page(s):938 - 939
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB)

    Epitaxial GaAs diodes have been fabricated giving 651mW CW output power at 10 GHz under room temperature operation. A dc to RF efficiency of 10.1 percent was obtained from a diode operating CW while the measured output of another diode was over 20 mW for 3 mA dc with 70-volt biasing. View full abstract»

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  • Low to high injections in double-diffused transistors

    Publication Year: 1968, Page(s):940 - 941
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    It is shown, in this correspondence, that the operation of most double-diffused transistors at all injection levels is equivalent to that of alloy devices with the effective doubling of the diffusion constant. Moreover, the base transit time of a double-diffused transistor exhibiting a fixed basewidth is nearly current-independent. View full abstract»

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  • The effect of illumination on Gunn oscillations in epitaxial GaAs

    Publication Year: 1968, Page(s):941 - 942
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    Coherent Gunn oscillations have been observed in long samples of epitaxial GaAs grown by both the solution and the vapor-transport methods on semi-insulating GaAs substrates. Samples of low carrier concentrations which do not exhibit Gunn oscillations, and samples which oscillate incoherently in the dark, oscillate coherently when illuminated. Illumination is observed to lead to an improvement in ... View full abstract»

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  • [Back cover]

    Publication Year: 1968, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it