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IEEE Transactions on Electron Devices

Issue 7 • July 1968

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Displaying Results 1 - 24 of 24
  • [Front cover and table of contents]

    Publication Year: 1968, Page(s): c1
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    Freely Available from IEEE
  • Editor's note

    Publication Year: 1968, Page(s): 443
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  • Foreword

    Publication Year: 1968, Page(s): 445
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  • Integrated microwave modules—A prospectus

    Publication Year: 1968, Page(s):446 - 450
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (592 KB)

    Applications of monolithic and hybrid semiconductor circuit technologies to microwaves are discussed from a semitechnical and economic viewpoint. Technical feasibility of performing nearly all functions through millimeter waves is foreseen. Economic success, however, is less tangible and depends mainly on two factors; the willingness of systems people to trade increased initial cost for greatly de... View full abstract»

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  • X-band integrated circuit mixer with reactively terminated image

    Publication Year: 1968, Page(s):450 - 459
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1069 KB)

    AnX-band mixer using GaAS Schottky barrier diodes with a thin-film 500-MHz IF preamplifier was developed using hybrid microwave integrated circuit techniques. The balanced mixer had filters to provide a short circuit at the image frequency. The entire mixer preamplifier occupied an area of only 0.38 square inches and had a noise figure of 6.7 dB which corresponded quite closely to the t... View full abstract»

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  • Hybrid integrated lumped-element microwave amplifiers

    Publication Year: 1968, Page(s):459 - 466
    Cited by:  Papers (19)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1072 KB)

    This paper describes the development of microwave lumped-element thin-film amplifiers. The basic design philosophy underlying lumped inductors and capacitors at microwave frequencies is reviewed, showing how Q's of 100 are achieved. A variety of tunable input, output, and interstage integrated lumped-element networks for transistor amplifiers were fabricated. The gain and efficiency of 2-GHz class... View full abstract»

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  • Ferrite elements for hybrid microwave integrated systems

    Publication Year: 1968, Page(s):467 - 473
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1344 KB)

    Complete realization of the potentialities of hybrid microwave integrated circuits will require both semiconductor and ferrite elements. This paper presents performance data for several microstrip ferrite devices that can play an important role in the exploitation of microwave integrated circuits. Data on both fixed-field and latched microstrip junction circulators are given including a fixed-fiel... View full abstract»

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  • Thin ferrite devices for microwave integrated circuits

    Publication Year: 1968, Page(s):473 - 482
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1728 KB)

    This paper is intended as a review of developments which allow ferrite materials in a planar geometry to be used in the realization of magnetic devices which are compatible in form with other microwave integrated circuits. These devices include phase shifters (reciprocal and nonreciprocal), latching circulators, isolators, and phase and amplitude modulators. The application of some of these device... View full abstract»

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  • A high-performance integrated microwave circuit frequency quadrupler

    Publication Year: 1968, Page(s):482 - 486
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (574 KB)

    AnS- toX-band frequency quadrupler was developed with a 4.0-dB conversion loss and 11-percent bandwidth using hybrid integrated microwave circuit techniques. The multiplier has a low-pass transforming filter on the input and a bandpass filter consisting of half-wavelength lines edge coupled over quarter wavelengths on the output. Design curves for the bandpass filter are give... View full abstract»

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  • Design considerations for an integrated 1.8GHz parametric amplifier

    Publication Year: 1968, Page(s):486 - 490
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (764 KB)

    A hybrid-integrated parametric amplifier has been fabricated in a microstrip transmission-line configuration. General design considerations and their implementation in a microstrip medium are discussed. The amplifier exhibited a power gain of 10 dB and 50-MHz half-power bandwidth with a noise figure of 2.0 dB. It was pumped atX-band frequency and required only 10 mW of pump power. The i... View full abstract»

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  • Computer aided design of wide-band integrated microwave transistor amplifiers on high dielectric substrates

    Publication Year: 1968, Page(s):491 - 501
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1000 KB)

    The problem of wide bandwidth and flat in-band gain response for microwave transistor amplifiers has been reduced to the optimization of a number of important variables from computer prepared design charts. Through the general flexibility of the computer-generated data, a large variety of amplifier responses are possible - using distributed circuit matching networks. As experimental verification o... View full abstract»

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  • An accurate calculation of uniform microstrip transmission lines

    Publication Year: 1968, Page(s):501 - 506
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (568 KB)

    An analytical program for calculating the field distribution about a microstrip transmission line bounded by a shielding wall is used to calculate the impedance, velocity, and attenuation parameters. The program input parameters are the dimensions of the strip and shielding wall and the relative dielectric constant of the substrate material. The field distribution about the strip is integrated to ... View full abstract»

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  • Optimization of diode structures for monolithic integrated microwave circuits

    Publication Year: 1968, Page(s):507 - 512
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1056 KB)

    Device requirements of a medium power Ku-band reflective phase shifter are reviewed indicating a requirement for a diode with a 4-Terrahertz cut-off frequency. Various structures are examined to test their suitability for integration and feasibility for meeting specifications. A "pocket version" of a surface oriented device design is chosen and described. It is shown to meet or exceed all electric... View full abstract»

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  • GaAs integrated microwave circuits

    Publication Year: 1968, Page(s):513 - 516
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    GaAs has many desirable features that make it most useful for microwave and millimeter-wave integrated circuits. The process of selective epitaxial depositions of high purity single-crystal GaAs with various doping concentrations into semi-insulating GaAs substrates has been developed. These high-resistivity substrates (>106ohm.cm) provide the electrical isolation between devices, el... View full abstract»

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  • Millimeter-wave integrated circuits

    Publication Year: 1968, Page(s):517 - 523
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1056 KB)

    Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25... View full abstract»

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  • Design of digital loaded-line phase-shift networks for microwave thin-film applications

    Publication Year: 1968, Page(s):524 - 530
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1000 KB)

    This paper decribes the design approach, fabrication techniques, and electrical performance for two types of microwave hybrid thin-film phase shifters. Emphasis is placed on the practical aspects of the overall design and fabrication. A simplified set of design equations for loaded-line phase-shift networks is presented and divided into three categories based on the type of loading employed. The t... View full abstract»

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  • An evaluation of materials and processes for integrated microwave circuits

    Publication Year: 1968, Page(s):531 - 537
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1384 KB)

    This paper presents an evaluation of materials and processes applicable to the fabrication of hybrid microstrip microwave circuits. Substrate materials evaluated included aluminas, beryllias, quartz, and glass of varying purities and surface finishes. Conductor materials evaluated included silver, copper, gold, and aluminum. Fabrication processes studied included vacuum deposition sputtering elect... View full abstract»

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  • A 3-dB directional coupler for microwave integrated circuits

    Publication Year: 1968, Page(s):538 - 539
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    A procedure for designing quarter-wavelength 3-dB directional couplers is described which utilizes a perturbation technique to reduce the number of experimental models needed during the development. Limitations caused by unequal odd and even mode phase velocities and junction parasitics are discussed. The use of thin-film conductors on quartz and glazed ceramic gives a coupling accuracy better tha... View full abstract»

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  • A multistub filter for microstripline

    Publication Year: 1968, Page(s):539 - 542
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    A maximally flat multistub filter was designed using both λ/4 shorted and λ/2 open stubs and constructed on ceramic substrate using microstrip transmission lines. View full abstract»

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  • High-power 1-GHz coplanar Gunn-effect oscillators

    Publication Year: 1968, Page(s):542 - 543
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    High peak pulsed output power (up to 100 watts), co-planar, L-band (1 GHz), epitaxial-layer Gunn oscillators are described. Particular emphasis has been given to minimizing surface damage and to effective heat dissipation. These high-power oscillators have been used in both coaxial and stripline circuits. The latter are adaptable to integrated circuitry. View full abstract»

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  • Hybrid integrated L-band transmitter

    Publication Year: 1968, Page(s):544 - 545
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    Microstrip circuit techniques are applied to the development of a small, light-weight, ruggedized,L-band 200-mW oscillator. Performance data of the oscillator are given and two applications, a radiosonde and a projectile telemetry transmitter, are described. View full abstract»

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  • Recent experimental work on silicon microstrip microwave transmission lines

    Publication Year: 1968, Page(s):545 - 546
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    First Page of the Article
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  • A microstrip nonreciprocal tunable YIG filter

    Publication Year: 1968, Page(s):546 - 548
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (480 KB)

    A nonreciprocal tunable YIG filter in a microstrip configuration has been constructed which makes use of a novel method of generating a circularly, polarized field in the plane of a microstrip circuit. Nonreciprocities in excess of 40 dB have been obtained atXband with relatively low insertion loss and VSWR. View full abstract»

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  • [Back cover]

    Publication Year: 1968, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it