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IEEE Transactions on Electron Devices

Issue 5 • May 1968

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1968, Page(s): c1
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    Freely Available from IEEE
  • Modeling of steady-state optical phenomena in transistors and diodes

    Publication Year: 1968, Page(s):267 - 274
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (557 KB)

    A lumped model is derived for photodiodes and phototransistors from which steady-state spectral properties, such as quantum efficiency, can be determined. The model is derived in a manner such that its utility extends to regions of any length ω that is, there is noomega/Lll1restriction, whereLrepresents the minority-carrier diffusion length in the region. The validity of... View full abstract»

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  • Precision microwave measurement of the internal parasitics of tunnel-diodes

    Publication Year: 1968, Page(s):275 - 282
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (772 KB)

    This paper reports the results of precision microwave standing-wave measurements using a superheterodyne technique from 4 to 11 GHz on the internal parasitics of tunnel-diodes terminating a coaxial-line. Because of past conflicting conjectures as to the frequency dependence of the series resistance, particular attention has been paid to its accurate evaluation. Errors due to transmission-line atte... View full abstract»

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  • An improved dispersion relationship for the p-n junction avalanche diode

    Publication Year: 1968, Page(s):282 - 289
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    A tractable and more physically realistic dispersion relationship for the avalanche diode than previously available has been developed, This includes terms relating to the differences in hole and electron velocities and ionization coefficients. Analysis of this modified dispersion relation indicates new ranges for instabilities. Plots for selected cases are presented. View full abstract»

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  • A metal-insulator-silicon junction seal

    Publication Year: 1968, Page(s):290 - 293
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    Most semiconductor devices today have a costly vacuum-tight encapsulation that provides a microenvironment for high reliability and electrical connections to the circuit in which it is used. A junction seal consisting of a metal-insulator-silicon (MIS) system of materials has been developed to replace the vacuum-tight encapsulation. The MIS junction seal, consisting of platinum silicide-titanium-p... View full abstract»

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  • Theory of nonlinear distortion produced in a semiconductor diode

    Publication Year: 1968, Page(s):294 - 307
    Cited by:  Papers (21)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1632 KB)

    The extensive literature on the nonlinear behavior of semiconductor devices is reviewed. Over and above what is offered in the literature, the general theory of nonlinear distortion is presented in a clear and easily understood manner. Formulas derive for several of the more important kinds of distortion are readily applicable to any nonlinear transfer characteristic describing frequency-independe... View full abstract»

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  • Transistor noise at high injection levels

    Publication Year: 1968, Page(s):307 - 313
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (621 KB)

    Measurements of transistor noise at high injection levels are compared with the predictions made by the low-level injection theory, The noise is represented by an emf eein series with the emitter and a current generator i in parallel with the collector: eeis split into a part ee' fully correlated withiand a part ee" uncorrelated withi View full abstract»

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  • Noise in various electron multiplication methods used in imaging devices

    Publication Year: 1968, Page(s):314 - 320
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (713 KB)

    Noise data are presented for various electron multiplication methods used in imaging devices. It is shown that the noise of these devices can always be represented in the same manner and that it can be described by a noise deterioration factor Γ, which is the ratio of the output noise over the multiplied input noise. In the transmission secondary electron multiplier, Γ decreases with inc... View full abstract»

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  • Television camera tube component noise factors

    Publication Year: 1968, Page(s):320 - 333
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1272 KB)

    The signal-to-noise ratio in the video output from a television camera tube equals the signal-to-noise ratio in the optical exposure divided by the product of the noise factors for each of the tube'S components. The noise factor of each component is determined by the amount by which the component increases the rms fluctuation in the number of quanta representing a picture element. The noise factor... View full abstract»

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  • A cold-cathode gas-discharge pulse modulator

    Publication Year: 1968, Page(s):333 - 336
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    A cold-cathode gas-discharge tube, having an easily vaporizable solid cathode such as cadmium and a gas filling, has been studied as a pulse modulator. The electrical performance of the device has been satisfactory, but the life is limited by gas clean-up. View full abstract»

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  • Studies of the emission from indium antimonide

    Publication Year: 1968, Page(s):337 - 338
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    Experimental studies on the radio-frequency emission-- from InSb under the influence of electric and magnetic fields in the range of 10 MHz to 10 GHz, including the effect of temperature variations around 77° K, are presented. Indications of very weak emission for a narrow range of electric fields in the absence of a magnetic field are observed. View full abstract»

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  • [Back cover]

    Publication Year: 1968, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it