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IEEE Transactions on Electron Devices

Issue 4 • April 1968

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1968, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1968, Page(s): 189
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  • Introduction to solid-state imaging issue

    Publication Year: 1968, Page(s): 190
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  • Developmental solid-state imaging system

    Publication Year: 1968, Page(s):191 - 196
    Cited by:  Papers (9)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1016 KB)

    A developmental imaging system has been constructed as part of a long-term program to develop a high quality, high performance, all solid-state television camera for NASA. The purpose of the developmental system is to provide a test and demonstration vehicle for solid-state mosaics developed on the program and to obtain limited operational information in a nonlaboratory environment. The system, lo... View full abstract»

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  • Integrated arrays of silicon photodetectors for image sensing

    Publication Year: 1968, Page(s):196 - 201
    Cited by:  Papers (38)  |  Patents (32)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    Development of linear and area arrays of silicon photodetectors operating in a photon flux integration mode is described. This mode of operation, which permits the trade of gain for bandwidth, is reviewed. It is possible to obtain full frame storage at commercial TV frame rates from area arrays of silicon phototransistors. Practical integrated structures of both diode and transistor arrays will be... View full abstract»

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  • Self-scanned silicon image detector arrays

    Publication Year: 1968, Page(s):202 - 209
    Cited by:  Papers (65)  |  Patents (36)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1008 KB)

    The basic principle of operation of each bit in a matrix of image detectors is described, together with the derivation of appropriate operating formulas. The necessary circuitry to make a functional two-dimensional array is also described, including the scanning circuitry integrally constructed with the photodetector matrix. The necessary design considerations for operation of the matrix are discu... View full abstract»

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  • Monolithic silicon mosaics for far-infrared imaging

    Publication Year: 1968, Page(s):209 - 214
    Cited by:  Papers (2)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    Monolithic detector mosaics were constructed for image sensing at wavelengths from three to 30 µm. The mosaics use impurity photoconduction in silicon to sense infrared radiation. Operation in the 25 to 40°K temperature range is obtained with closed-cycle cooling. Photosensor elements, spaced on 32 mil centers, are formed by solid-state diffusion, and a junction diode is constructed in s... View full abstract»

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  • Thin-film circuits for scanning image-sensor arrays

    Publication Year: 1968, Page(s):215 - 219
    Cited by:  Papers (5)  |  Patents (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    Integrated circuits for scanning a photosensitive array at standard television scan rates have been fabricated by evaporated thin-film techniques. These include: 1) A 264-stage parallel-output complementary shift register with a driver stage at each output. 2) A 256-output transistor decoder with video coupling circuits for scanning an array with line storage. A single line of 256 photoconductordi... View full abstract»

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  • A solid-state image converter

    Publication Year: 1968, Page(s):220 - 225
    Cited by:  Papers (1)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    An EL-PC image converter has been designed to convert the near-IR radiation obtained from light-emitting semiconductor diodes into visible radiation. In addition to wavelength conversion, a quantum gain was also obtained. High contrast ratios are shown to be dependent upon photoconductor capacitance. Concentric, noncoplanar electrode structures have been uti... View full abstract»

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  • Transfer functions of imaging mosaics utilizing the charge storage phenomena of transistor structures

    Publication Year: 1968, Page(s):226 - 237
    Cited by:  Papers (5)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1024 KB)

    Silicon phototransistors operating in the integration mode have been used in light detection and imaging systems. A solid-state imaging system employing a monolithic mosaic of 12 800 n-p-n phototransistors has been developed. An analysis of the integration mode of operation of a silicon phototransistor is presented. The analysis employs a simplified equivale... View full abstract»

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  • Phototransistor operation in the charge storage mode

    Publication Year: 1968, Page(s):237 - 248
    Cited by:  Papers (16)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1104 KB)

    Phototransistor performance is considered for the charge storage mode, in which the phototransistor is briefly pulsed and then permitted to remain with both junctions reverse-biased while in the presence of illumination. The charge delivered with the next pulse is proportional to the integral of light received since the last pulse. A lumped model of the transistor, amended here to account for phot... View full abstract»

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  • Performance characteristics of pulsed phototransistor structures under various conditions

    Publication Year: 1968, Page(s):248 - 256
    Cited by:  Papers (2)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (992 KB)

    Measurements are made on linear and area arrays of phototransistors operating in the steady-state and pulsed (integration) modes of operation. Description of the experimental setup is given. A simplified analysis of the pulsed mode of operation is presented. The heart of the study is concerned with measuring parameters critical to pulsed mode performance. The effects of temperature, readout voltag... View full abstract»

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  • Solid-state imaging—Methods of approach

    Publication Year: 1968, Page(s):256 - 261
    Cited by:  Papers (3)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    Various approaches to solid-state imaging systems are summarized, and characteristic features reviewed. The paper assumes some familiarity with the work reported in preceding papers and attempts to relate the generalized tradeoffs between the various approaches. It is concluded that the capability has been developed to realize limited performance solid-state imaging systems, but that considerable ... View full abstract»

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  • [Back cover]

    Publication Year: 1968, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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