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IEEE Transactions on Electron Devices

Issue 2 • Feb. 1968

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1968, Page(s): c1
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    Freely Available from IEEE
  • Efficiency improvement of the traveling-wave interaction process

    Publication Year: 1968, Page(s):49 - 59
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1048 KB)

    Experimental evidence that conventionally designed, uniform-period traveling-wave amplifiers are potentially highly efficient devices is presented. Experiments with a traveling-wave re-entrant cavity tube and with a two-helix tube show that substantial improvement is possible when the RF energy of the so-called beam of a saturated traveling-wave tube is used. Tests reported here on the two-helix t... View full abstract»

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  • Large-signal behavior of distributed klystrons

    Publication Year: 1968, Page(s):60 - 69
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    A theoretical large- and small-signal analysis of the behavior of standing-wave-type distributed circuit klystrons, based on a confined flow model, is described. A two-cavity klystron with a π-mode double-gap distributed output circuit and a conventional single-gap input cavity was selected as a specific example for study. The field distribution for the experimental cavities was measured and ... View full abstract»

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  • Approximate formulas for crossed-field potential-minimum parameters

    Publication Year: 1968, Page(s):70 - 74
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    A parabolic potential distribution is assumed in order to study the static properties of the crossed-field potential minimum. The half-Maxwellian normal velocity distribution function and the full-Maxwellian transverse velocity distribution function are integrated over the initial velocity plane with the proper boundary conditions to find an expression for the ratio of beam current to emission cur... View full abstract»

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  • The effect of space charge on shot noise in crossed-field electron guns

    Publication Year: 1968, Page(s):75 - 84
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    The two-dimensional electronic behavior of the crossed-field potential minimum is analyzed by means of a feedback network which provides a vehicle for understanding the complex phenomena, while allowing quantitatively accurate numerical calculations. The solutions, limited to the low-frequency range where transit time may be neglected, Show shot-noise smoothing as a function of magnetic field and ... View full abstract»

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  • Space-charge and secondary emission effects in a computer simulation of crossed-field distributed-emission amplifiers

    Publication Year: 1968, Page(s):85 - 97
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1304 KB)

    A generalized steady-state nonlinear electron-wave interaction theory is developed for the crossed-field distributed-emission or emitting-sole amplifier. The system equations are non-linear integro-differential equations, developed from the one-dimensional equivalent transmission-line equation, the Lorentz force equation, the continuity equation, and Poisson's equation. The effects of dc, RF and s... View full abstract»

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  • Clean-up in TR tubes

    Publication Year: 1968, Page(s):98 - 104
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    Clean-up data taken under controlled conditions applicable to TR tubes are presented for hydrogen in quartz, 7070 glass, copper, nickel, molybdenum, and kovar. The data are related to practical TR discharges where clean-up may take place under several gas-solid conditions. The theoretical and experimental results show that the square-root clean-up rate varies directly with pulse width, pulse repet... View full abstract»

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  • Three-terminal GaAs switches

    Publication Year: 1968, Page(s):105 - 110
    Cited by:  Papers (9)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (616 KB)

    A new three-terminal GaAs device has been developed and its switching characteristics investigated. The third ohmic contact of the device is located on a side surface near the cathode of a conventional two-terminal long n-type GaAs oscillator. High-speed switching of oscillation, with turn-on and turnoff times of one nanosecond, has been successfully obtained by applying single short triggering pu... View full abstract»

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  • Influence of carrier mobility and design parameters on field effect transistor characteristics

    Publication Year: 1968, Page(s):110 - 125
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1045 KB)

    The operation of a field effect transistor (FET) having a plane circular geometry is analyzed. By taking limits, the solution for a plane rectangular geometry is obtained. The carrier mobility is assumed to vary asE(-1/n), whereEis the drift field andnan experimentally determined number depending on the drift field. Assuming the gradual approximation to hold, the d... View full abstract»

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  • Second breakdown of double epitaxial transistors

    Publication Year: 1968, Page(s):125 - 128
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (383 KB)

    This paper deals with the second breakdown of transistors with epitaxial collector, epitaxial base, and diffused emitter. Transistors were fabricated with base width WBin the range of 2 to 18 µ and resistivity in the range of 0.1 to 10 ohm . cm. The optimum values of the resistivity and the thickness of these regions were calculated by computer techniques. The devices were mounted ... View full abstract»

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  • A spherical semiconductor photocell using lateral photoeffect

    Publication Year: 1968, Page(s):129 - 134
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    Previously, photocells using the lateral photoeffect for determining the direction to a light source within a small angle (one pair of contacts), or a small solid angle (two pairs of contacts), have been described. Here, a further development of the lateral photocell, in this case using spherical geometry and three pairs of contacts, is presented. This photocell allows measurement of the direction... View full abstract»

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  • Switching properties of the double-emitter transistor

    Publication Year: 1968, Page(s):135 - 136
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (101 KB)

    On the basis of the extended Ebers-Moll model of the multijunction transistor, theV-Irelationships of the double-emitter transistor switch are given, and the characteristic parameters are calculated. View full abstract»

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  • [Back cover]

    Publication Year: 1968, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it