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IEEE Transactions on Electron Devices

Issue 11 • Date Nov. 1967

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1967, Page(s): 727
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  • A bibliography of metal-insulator-semiconductor studies

    Publication Year: 1967, Page(s):728 - 749
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2840 KB)

    A bibliography of more than 550 papers in the field of metal-insulator-semiconductor theory and technology provides a catalog of the published work so that investigators can more easily relate their work to that reported by others. In most of the papers, the insulator layer discussed is SiO2or silicon nitride, and the semiconductor is silicon. The information has been arranged according... View full abstract»

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  • Proton and sodium transport in SiO2films

    Publication Year: 1967, Page(s):749 - 759
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1000 KB)

    The results of an investigation into the relative roles of sodium and proton transport in silicon-dioxide films are presented. Tritium oxide (3H2O), tritiated ethanol, neutron activation, and sodium 22 tracer analyses are used to identify the mobile ions directly, and the results of these analyses are then directly correlated with the observed electrical behavior. View full abstract»

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  • Instability in vacuum deposited silicon oxide

    Publication Year: 1967, Page(s):760 - 764
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    The instability of vacuum deposited SiO2in field-effect transistors is described. Results for an Al-SiO2-CdSe system are accounted for by a model in which mobile ions are located predominantly in traps at the SiO2interfaces. The asymmetrical drift rate observed was accounted for by a difference in activation energy for release of ions from the two interfaces. The a... View full abstract»

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  • Radiation-induced space-charge buildup in MOS structures

    Publication Year: 1967, Page(s):764 - 774
    Cited by:  Papers (40)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (984 KB)

    An analysis of a simple model for radiation-induced space-charge buildup in the SiO2layers of MOS structures has been carried out. The model assumes that hole-electron pairs are created in the SiO2by the radiation and that some of the electrons thus created drift out of the SiO2layer under the action of an applied potential across the oxide, VG, while th... View full abstract»

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  • Surface states and 1/f noise in MOS transistors

    Publication Year: 1967, Page(s):775 - 777
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Surface-state density in n-channel MOS transistors operating in the inversion mode has been determined from the channel conductance and related to 1/ f noise in these devices. It has been found that the noise is proportional to the surface-state density at the Fermi level. The surface orientation and temperature affect the noise output only indirectly, through t... View full abstract»

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  • Influence of illumination on MIS capacitances in the strong inversion region

    Publication Year: 1967, Page(s):777 - 780
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    A simple analysis is presented of the effect of illumination on MIS capacitance in the strong inversion region. The two mechanisms responsible for the increase of capacitance under illumination are described: the decrease of the time constant generation of the inversion layer, and the decrease of the space-charge region under illumination. The theoretical results are compared with the experimental... View full abstract»

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  • On the determination of minority carrier lifetime from the transient response of an MOS capacitor

    Publication Year: 1967, Page(s):781 - 784
    Cited by:  Papers (52)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    Minority carrier lifetime greater than 10-10seconds can be determined for silicon at room temperature by observing the transient response of the MOS capacitance after the application of a large depleting voltage. The waveform is exponential for heavily doped samples and nonexponential for lightly doped samples. The transition occurs when the oxide capacitance approximately equals the sp... View full abstract»

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  • Minority carrier lifetime determination from inversion layer transient response

    Publication Year: 1967, Page(s):785 - 786
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (208 KB)

    A simple method is described for the determination of minority carrier lifetime using the small signal response time of an inversion layer in an MOS capacitor. Only a single charge transport electrometer measurement and the oxide thickness are required to compute this lifetime. It is also shown that since the measured response times are generally several orders of magnitude greater than the actual... View full abstract»

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  • Behavior of MOS inversion layers at low temperature

    Publication Year: 1967, Page(s):787 - 789
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    Metal-oxide-silicon capacitance voltage curves in the inversion range at liquid nitrogen temperature are interpreted. Buildup of the inversion charge is very slow, but once it is established it cannot be readily injected. A forward bias of about 0.25 volt must be reached across the space-charge region before noticeable injection occurs. The true inversion capacitance voltage curve can be measured ... View full abstract»

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  • Thermal oxidation of silicon as an impurity-controlled process

    Publication Year: 1967, Page(s):789 - 790
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1967, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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