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IEEE Transactions on Electron Devices

Issue 10 • Oct. 1967

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Displaying Results 1 - 18 of 18
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1967, Page(s): 639
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  • A low-frequency analog for a Gunn-effect oscillator

    Publication Year: 1967, Page(s):640 - 656
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2776 KB)

    After a brief introduction to the Gunn effect and an explanation of the proposed equivalent circuit of the Gunn diode, a low-frequency (5 Hz) lumped-circuit analog is described. The analog is able to simulate the initiation and circuit quenching of the domain, the transit time of a dipole domain, and the dynamic negative-resistance characteristic associated with the domain. Thus the analog can qua... View full abstract»

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  • An analysis of current instabilities in semi-insulating piezoelectric crystals

    Publication Year: 1967, Page(s):656 - 663
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    The conditions for current oscillation in a semi-insulating piezoelectric crystal with nonuniform carrier concentration are obtained using a simplified electron-phonon interaction law and the Weinreich momentum relationship. Start-oscillation conditions are then obtained as a function of the applied field, the carrier concentration ratio in the two parts of the crystal and the ratio of their lengt... View full abstract»

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  • Characteristics and applications of domains in semiconducting CdS

    Publication Year: 1967, Page(s):663 - 668
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (752 KB)

    The characteristics of domains due to electron-phonon coupling in semiconducting CdS are measured using a high resolution probe. The behavior of domains in CdS for applications such as domain originated function generators is discussed and the results are compared with previous work on electron transfer domains in GaAs. View full abstract»

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  • Direct synthesis of crossed-field electron guns—A novel gun for producing Brillouin flow

    Publication Year: 1967, Page(s):669 - 676
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    A direct approach to the synthesis of crossed-field electron guns is presented. An iterative approximation to the desired beam form is achieved by application of the paraxial ray equation alternatively solving for potential and curvature along the beam while maintaining certain end-point conditions and the desired convergence pattern. When sufficient accuracy is obtained, polynomial approximations... View full abstract»

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  • The range of magnetron injection gun parameters

    Publication Year: 1967, Page(s):676 - 685
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1112 KB)

    Here, for the first time, the computer designs of axially symmetric magnetron injection guns are given in detail, and the practical problems of computing the electrodes are discussed. These designs have been experimentally used, showing that the design procedure is sufficiently accurate for predicting the characteristics. The important design parameters such as perveance, area convergence and magn... View full abstract»

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  • Equilibrium solutions for partially immersed relativistic electron beams

    Publication Year: 1967, Page(s):686 - 693
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    The equations relating the beam radius and axial electron velocity to easily measurable external beam parameters are developed for solid, relativistic beams. The beam parameters are tunnel voltage, beam current, axial magnetic field, cathode magnetic field, tunnel radius, and cathode radius. The equations are sufficiently complex to warrant the use of a digital computer if many cases are to be eva... View full abstract»

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  • Deflection defocusing correction by means of rotationally symmetrical lenses only

    Publication Year: 1967, Page(s):694 - 699
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    The design of an electrostatic deflection field is described, whose defocusing effects may be corrected by means of the dynamic focusing method involving rotational symmetrical lens elements only. The method of analysis used is simple and approximate, and numerical results are illustrative rather than accurate. View full abstract»

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  • Klystrons for the Stanford linear accelerator center

    Publication Year: 1967, Page(s):700 - 705
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (768 KB)

    A 2-mile-long linear accelerator has been built at Stanford University that uses 245 klystrons to produce an electron beam with an energy up to 20 GeV. Although most of the tubes used are being procured from industry, a major portion of the development work has been and is still being done at Stanford. We will review the important results of this work. In general, the klystrons are designed to pro... View full abstract»

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  • Planar beam-lead gallium arsenide electroluminescent arrays

    Publication Year: 1967, Page(s):705 - 709
    Cited by:  Papers (7)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1280 KB)

    The application of planar and beam-lead technologies to GaAs has permitted the fabrication of integrated arrays of electroluminescent diodes. The arrays, to date, have consisted of 4 × 4 matrices, and larger arrays are now considered to be feasible. The diodes are Zn-diffused on 0.010-in centers, with Zn masking being provided by a composite structure of thermally deposited SiO2and... View full abstract»

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  • Field-effect transistor (FET) bibliography

    Publication Year: 1967, Page(s):710 - 717
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    This list of references contains over 200 entries, and no claims are made as to its completeness. The references for the era 1939 through 1963 refer to field-effect transistors, in general, and were obtained mostly from J. T. Wallmark's article, "The Field-Effect Transistor--An Old Device with New Promise," IEEE Spectrum, vol. 1, pp. 182-191, March 1964. The subsequent references (1964 to mid-1967... View full abstract»

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  • Frequency modulation of Gunn-effect oscillators

    Publication Year: 1967, Page(s):717 - 718
    Cited by:  Papers (10)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Electronic tuning in CW X-band Gunn effect oscillators is reported. Several mechanisms which may account for the effects observed are discussed and discounted on the basis of simple models. An explanation in terms of growing domains is proposed. View full abstract»

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  • Power output and efficiency of voltage controlled negative resistance oscillators

    Publication Year: 1967, Page(s):718 - 719
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB)

    This correspondence summarizes the equations for power output and efficiency of voltage controlled negative resistance oscillators with cubic current-voltage characteristics, and considers the application of these equations to bulk GaAs oscillators. View full abstract»

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  • Signature of the LSA mode

    Publication Year: 1967, Page(s):719 - 720
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    First Page of the Article
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  • On the shape of traveling domains in gallium arsenide

    Publication Year: 1967, Page(s):720 - 721
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    First Page of the Article
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  • Traveling-wave tube interaction circuits

    Publication Year: 1967, Page(s):721 - 723
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1967, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it