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IEEE Transactions on Electron Devices

Issue 9 • Sept. 1967

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Displaying Results 1 - 25 of 96
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1967, Page(s): 459
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  • Introduction

    Publication Year: 1967, Page(s): 460
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  • Characterization of bulk negative-resistance diode behavior

    Publication Year: 1967, Page(s):461 - 463
    Cited by:  Papers (10)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    Over certain ranges of frequency, bulk negative-resistance diodes can act as amplifiers or as oscillators depending on the doping, length between contacts, and external circuit. This behavior can be divided into four classes: Gunn oscillation, stable amplification, LSA oscillation, and bias-circuit oscillation. The four classes of behavior are discussed generally with references to the more detail... View full abstract»

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  • Small-signal behavior of Gunn diodes

    Publication Year: 1967, Page(s):464 - 469
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    Calculations of small-signal impedance have been made for Gunn diodes over a broad range of length and bias current density, taking into account the spatial inhomogeneity of the dc electric field. The nature of the impedance functions was found to vary with the above parameters, and was distinctly different for amplifying diodes, oscillatory diodes, and diodes biased below the threshold for active... View full abstract»

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  • Microwave circuit characteristics of bulk GaAs oscillators

    Publication Year: 1967, Page(s):469 - 476
    Cited by:  Papers (16)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (727 KB)

    The microwave circuit characteristics of bulk GaAs transit-time mode and limited space-charge accumulation (LSA) mode oscillators have been evaluated experimentally and theoretically. Experimental measurements were performed with a waveguide-coaxial microwave circuit having two experimental degrees of freedom in which the circuit radiation impedance at the device contacts was evaluated by a dyadic... View full abstract»

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  • Detailed theory of the negative conductance of bulk negative mobility amplifiers, in the limit of zero ion density

    Publication Year: 1967, Page(s):476 - 492
    Cited by:  Papers (16)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1536 KB)

    The complex admittance behavior is calculated for a bulk negative conductivity semiconductor, such as n-type GaAs, in the limit of zero doping and zero trapping, when all electrons are due to space-charge limited emissions from the cathode. Two different approximations are used: in the first, in closed analytical form, electron diffusion is neglected; in the second, by computer simulation of the i... View full abstract»

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  • An analytic approach to the LSA mode

    Publication Year: 1967, Page(s):492 - 497
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    The conditions necessary for operation in the limited space-charge accumulation (LSA) mode, and the efficiencies that can be obtained, have been calculated for a range of low-field mobilities in GaAs. The analysis follows the theory published by Copeland, but the expression chosen to describe the velocity field characteristics allows direct solution of the integrals that occur in the theory, and t... View full abstract»

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  • Doping uniformity and geometry of LSA oscillator diodes

    Publication Year: 1967, Page(s):497 - 500
    Cited by:  Papers (14)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (400 KB)

    For maximum dc to RF power conversion efficiency, the dc and RF electric-field amplitudes must be properly related throughout the volume of a limited space-charge accumulation (LSA) diode. Space-charge due to a few percent fluctuation in the relative doping can distort the electric field enough to reduce the maximum attainable efficiency. Standing-wave effects with the diode limit the width in the... View full abstract»

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  • LSA operation of large volume bulk GaAs samples

    Publication Year: 1967, Page(s):500 - 504
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    Peak pulse powers of 350 watts, with 3 percent efficiency at X-band frequencies, were obtained from large volume GaAs devices operating in the LSA mode. Experimental dependence of the LSA mode on circuit loading, applied voltage, and the ratio of carrier concentration to frequency are reported. The results are shown to be in excellent agreement with Copeland's theoretical calculations. The high-cu... View full abstract»

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  • Measurements of the current-field strength characteristic of n-type gallium arsenide using various high-power microwave techniques

    Publication Year: 1967, Page(s):505 - 511
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    Determination of the current density/field strength characteristic of n-GaAs in the range of negative differential mobility is made difficult by field distortions and instabilities. In the present work these problems are eliminated by using microwave heating of the electrons. Various microwave techniques and the results obtained by them are described. Data on materials of various conductivities ar... View full abstract»

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  • Localized temporary increase in material conductivity following impact ionization in a Gunn-effect domain

    Publication Year: 1967, Page(s):512 - 517
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    It has been found that raising the applied bias on a long sample containing a high-field domain can result in a temporary increase in material conductivity over the region of the sample traversed by the domain while the higher bias was applied. The effect can be explained in terms of intrinsic impact ionization within the domain in the presence of a deep impurity level. The measured decay time of ... View full abstract»

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  • Linear microwave amplification with Gunn oscillators

    Publication Year: 1967, Page(s):517 - 522
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (558 KB)

    Linear microwave amplifiers with continuous power outputs of 100 mW have been constructed utilizing the frequency-independent negative conductance observed externally in Gunn oscillators. This negative conductance is exhibited only in samples containing propagating dipole layers, in other words,n_{0} . Lmust be larger than 1012cm-2for n-GaAs. The output power obtai... View full abstract»

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  • The performance of X-band Gunn oscillators over the temperature range 30°C to 120°C

    Publication Year: 1967, Page(s):522 - 525
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    The output power of a cavity-controlled Gunn oscillator has been measured at a frequency of 10 GHz, as a function of bias voltage over the temperature range 30°C to 120°C. The measurements were made using 500-ns pulses to avoid significant changes in-device temperature during a pulse, and at a duty cycle of 20:1 to maintain a low mean input power. The device was operated in a coaxial cav... View full abstract»

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  • Some properties of Gunn-effect oscillations in a biconical cavity

    Publication Year: 1967, Page(s):526 - 531
    Cited by:  Papers (12)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (605 KB)

    Experiments have been performed to measure the parameters of epitaxial GaAs cavity controlled Gunn oscillators withnl sim 10^{12}cm-2over the frequency range of 7 to 20 GHz. It is found that individual devices exhibit a large variation of transit frequency with bias voltage and this is related to their performance in a cavity. The real and imaginary parts of the device reacta... View full abstract»

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  • The selection of GaAs epitaxial layers for CW X-band Gunn diodes

    Publication Year: 1967, Page(s):532 - 534
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (290 KB)

    Results are reported on 1000 diodes made from about 50 GaAs epitaxial layers. The layers are classified for quality according to the power output of the average device, and the correlation between quality and epitaxial layer thicknessland resistivity ρ are examined. It is shown that the quality cannot be linked to the thickness or resistivity alone, but is closely connected with th... View full abstract»

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  • Functional bulk semiconductor oscillators

    Publication Year: 1967, Page(s):535 - 546
    Cited by:  Papers (28)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1024 KB)

    This paper describes the generation of various waveforms with bulk semiconductor (Gunn-effect) oscillators having non-uniform cross sections or connected to external resistive circuits by means of small contacts attached to the bulk between the cathode and anode. In nonuniform oscillators, if the variation of the cross section is gradual, a high-field domain is equivalent to a constant current den... View full abstract»

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  • Gunn effect in CdTe

    Publication Year: 1967, Page(s):547 - 551
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (846 KB)

    We have been examining the response of n-type CdTe to pulsed electric fields. In our best units, prepared to have a uniform cross section, the current remains ohmic, to good approximation, almost to threshold. Above the threshold field of (13±2) kV/cm well-defined Gunn oscillations are observed with a spike amplitude 35-50 percent of the total current. We estimate a domain drift velocity... View full abstract»

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  • Contribution to the experimental study of the Gunn effect in long GaAs samples

    Publication Year: 1967, Page(s):552 - 562
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1360 KB)

    We describe some experimentally observed features of the Gunn effect in long samples (0.1 to 0.4 cm) of GaAs with a resistivity of 1 to 4 Ω. cm at room temperature. The normal behavior of current oscillations and the effect of inhomogeneities may be well understood qualitatively if we take into account the characteristic of the excess voltage in the high-field domain versus the electric field... View full abstract»

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  • Generalized small-signal analysis of avalanche transit-time diodes

    Publication Year: 1967, Page(s):563 - 568
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    The one-dimensional small-signal analysis of avalanche transit-time diodes with distributed multiplication is reduced to the concept of two layers in cascade, each having a constant ionization rate. The interface is located in the distinguished neutral plane of equal direct electron and hole currents. In this configuration the small-signal problem is characterized by two parameters : namely the lo... View full abstract»

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  • A small-signal theory of avalanche noise in IMPATT diodes

    Publication Year: 1967, Page(s):569 - 580
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (946 KB)

    A general small-signal theory of the avalanche noise in IMPATT diodes is presented. The theory is applicable to structures of arbitrary doping profile and uses realistic (alpha neq betain Si) ionization coefficients. The theory accounts in a self-consistent manner for space-charge feedback effects in the avalanche and drift regions. Two single-diffusedn-pdiodes of identical d... View full abstract»

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  • Microwave Si avalanche diode with nearly-abrupt-type junction

    Publication Year: 1967, Page(s):580 - 584
    Cited by:  Papers (13)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (603 KB)

    Microwave Si avalanche diodes with a nearly-abupt-type junction have been made. The maximum output power so far obtained in CW operation is 1.1 watts at 12 GHz with an efficiency of 7.7 percent. The maximum efficiency observed is 8.0 percent. The improved performance over the previously reportedp nu nstructure, for which the best result was 250 mW at 12 GHz with an efficiency of 2.8 per... View full abstract»

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  • Composite avalanche diode structures for increased power capability

    Publication Year: 1967, Page(s):584 - 589
    Cited by:  Papers (23)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    The possibility of operating several avalanche oscillator wafers in parallel to obtain higher power and/or higher efficiency CW operation is explored analytically and experimentally. Experiments show that over a wide range the efficiency is roughly proportional to the power density in the semiconductor. The power densities required for good efficiency are very high and cannot be achieved in large ... View full abstract»

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  • Two types of microwave emission from InSb

    Publication Year: 1967, Page(s):590 - 593
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (393 KB)

    Two types of microwave emission from InSb plasma subjected to the crossed electric and magnetic fields were investigated experimentally. From the simultaneous measurements of Hall effect and microwave emission, the threshold condition of the one type of emission was obtained as(omega_{ce} tau_{e})^{2} cdot Delta n geq 3 times 10^{14}cm-3, whereomega_{ce}, tau_{e}, ... View full abstract»

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  • Microwave instability in n-type indium antimonide

    Publication Year: 1967, Page(s):593 - 596
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (432 KB)

    Indium Antimonide emits microwave noise when it is subjected simultaneously to parallel dc electric and magnetic fields whose values exceed certain thresholds. Comparison of the emission characteristics at 77°K with those at 4.2°K shows two major differences. 1) The threshold magnetic field at 4.2°K is approximately half of that at 77°K. 2) With increasing magnetic field the em... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it