Electron Devices, IEEE Transactions on
Issue 9 • Date Sept. 1967
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Displaying Results 1 - 25 of 96
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[Front cover and table of contents]
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PDF (237 KB)
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Introduction
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PDF (168 KB)
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Small-signal behavior of Gunn diodes
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PDF (608 KB)
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Detailed theory of the negative conductance of bulk negative mobility amplifiers, in the limit of zero ion density
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PDF (1536 KB)
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An analytic approach to the LSA mode
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PDF (536 KB)
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Measurements of the current-field strength characteristic of n-type gallium arsenide using various high-power microwave techniques
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PDF (704 KB)
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Localized temporary increase in material conductivity following impact ionization in a Gunn-effect domain
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PDF (648 KB)
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Functional bulk semiconductor oscillators
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PDF (1024 KB)
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Gunn effect in CdTe
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PDF (856 KB)
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Two types of microwave emission from InSb
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PDF (408 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
