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IEEE Transactions on Electron Devices

Issue 8 • Aug. 1967

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Pulse-driven silicon p-n junction avalanche oscillators for the 0.9 to 20 mm band

    Publication Year: 1967, Page(s):411 - 418
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    The fabrication of pulse-driven, diffused silicon p-n junction avalanche oscillators which have been operated at frequencies from 15 to 341 GHz is described. The experimental behavior of a large number of oscillators has been correlated with readily measurable properties of the p-n junctions, leading to first-order design parameters for construction of oscillators of this type usable at various fr... View full abstract»

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  • Design calculations of reverse bias characteristics for microwave p-i-n diodes

    Publication Year: 1967, Page(s):418 - 428
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (888 KB)

    The derivation of a set of design formulas for predicting the impedance of diffused p-i-n diodes as a function of reverse bias voltage is presented. The diode is divided into five regions, and appropriate approximations are made in each region to simplify the integration of resistive and reactive contributions to the total impedance. Using these formulas, curves of series resistance and capacitanc... View full abstract»

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  • Optical microprobe response of GaAs diodes

    Publication Year: 1967, Page(s):429 - 432
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (392 KB)

    GaAs p-n junction photocurrent response is obtained from an optical microprobe with a dynamic range of at least three decades and a light-spot diameter of about 1.3 µm. The results are found to correlate well with the appropriate theoretical response which includes surface recombination and assumed infinite absorption coefficient. Minority-carrier diffusion lengths computed from the data are ... View full abstract»

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  • The "Hourglass" energy diverter

    Publication Year: 1967, Page(s):433 - 438
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (592 KB)

    A new design for a series spark-gap array for energy diverter usage has been developed. The electrical circuit of this array differs from previously reported energy diverter designs in two respects. First, the capacitors from each electrode to ground are eliminated, and second, the interelectrode capacitances of the gaps are not all equal. By varying the interelectrode capacitances of each gap in ... View full abstract»

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  • Eigenvalues of characteristic noise matrix of an electron beam with half-Maxwellian velocity distribution

    Publication Year: 1967, Page(s):438 - 443
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (584 KB)

    A method is devised for determining the eigenvalue spectra of the characteristic noise matrix of electron beams with continuous velocity distributions. It is found that for an electron beam with a half-Maxwellian velocity distribution, all positive eigenvalues are equal to kTΔf while all negative eigenvalues approach zero. This finding is in agreement with the phenomenon of noise reduction in... View full abstract»

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  • High voltage breakdown of titania in vacuo

    Publication Year: 1967, Page(s):443 - 449
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    The electrical breakdown of titania in a vacuum using static electric fields is investigated experimentally, by examination of current and temperature variation at different applied voltages. Thermal instability is found to occur at voltages above a critical value. This leads to sufficiently high temperatures to cause the reduction of the titania into a lower-order semiconducting oxide, which carr... View full abstract»

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  • Generalized turn-on criterion of p-n-p-n devices

    Publication Year: 1967, Page(s):450 - 451
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (208 KB)

    A generalized turn-on criterion is desired for a p-n-p-n triode. Experimental results are in agreement with theoretical predictions. View full abstract»

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  • Microwave deflection of electron beams

    Publication Year: 1967, Page(s):451 - 452
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    When an electron beam interacts with a time-varying electric field, it is usual to ignore the effect of the induced magnetic field. It is shown that this may cause errors at microwave frequencies even for slow electrons. The particular case of electrons traversing a microwave cavity is examined in detail. View full abstract»

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  • Recombination centers in silicon transistor emitter-base junctions

    Publication Year: 1967, Page(s):452 - 453
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (184 KB)

    Analysis of the temperature dependence of silicon transistor emitter-base junction forward characteristics has yielded information about the recombination centers that give rise to the "non-ideal" component of the base current. The recombination centers are either slightly above midgap with electron capture cross-section much larger than hole capture cross-section, or slightly below midgap with ho... View full abstract»

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  • Correction to "Nonreciprocal tunnel diode distributed amplifier"

    Publication Year: 1967, Page(s): 453
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (99 KB)

    In the above-named work (ibid., vol. EC-14, pp. 174-175, March 1967), on page 175 the diode admittance Ys expression is corrected. The maximum line length is then affected so a corrected expression replaces the one originally given. View full abstract»

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  • [Back cover]

    Publication Year: 1967, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Politecnico di Torino,
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