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IEEE Transactions on Electron Devices

Issue 7 • Date July 1967

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Small-signal power flow and energy density for streaming carriers in the presence of collisions

    Publication Year: 1967, Page(s):345 - 349
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    The Poynting theorem, or equation of continuity relating energy density and power flow, is extended to include the effects of diffusion and collisions. It is shown that the presence of the thermal power due to diffusion is accompanied by an increase in electrokinetic power. The effects of collisions on the electrokinetic power and energy density are examined in detail in the absence of diffusion. ... View full abstract»

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  • Space-charge wavelengths in electron beams

    Publication Year: 1967, Page(s):350 - 357
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (864 KB)

    The discrepancies between measured and calculated small-signal space-charge wavelengths are discussed. It is shown that conventional methods of calculation are inadequate, causing errors up to 40 percent in a typical case. It is demonstrated that these errors cannot be explained by beam scalloping action, and that they are most severe when a high-perveance beam is used at low voltages with a high ... View full abstract»

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  • Computer calculation of deflection aberrations in electron beams

    Publication Year: 1967, Page(s):357 - 365
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    The aberrations of a magnetically deflected electron beam are investigated in detail using an IBM 7094 computer. The computer programming is applicable to the case of one-dimensional deflection through small angles. The beam is treated as a group of electrons having no internal interactions, no energy spread, and producing no external fields. The field distributions that would produce minimum tota... View full abstract»

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  • Noise measurements on a magnetron injection gun beam

    Publication Year: 1967, Page(s):365 - 368
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (432 KB)

    The results of noise measurements conducted on a helix-type traveling-wave amplifier containing a magnetron injection gun are described. A minimum noise figure of 15.3 dB was observed at 760 MHz with an approximate beam power of 1600 watts. The noise figure was minimized by an adjustment of the magnetic field, which determines the transit time of the electrons through a drift region. This optimize... View full abstract»

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  • High-frequency noise of the junction field-effect transistor

    Publication Year: 1967, Page(s):368 - 373
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    Based on Geurst's treatment of the high-frequency value of the admittances of the junction field-effect transistor, the high-frequency noise of the device has been computed, assuming that the noise source is of thermal origin. By applying an appropriate series expansion of the current it is possible to express the noise of the drain and gate current in terms of known quantities, as steady-state tr... View full abstract»

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  • An investigation into transistor cross-modulation at VHF under AGC conditions

    Publication Year: 1967, Page(s):374 - 381
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    The cross-modulation behavior of a transistor is studied for the case where it is operated in the VHF region and gain control is effected by driving it into saturation. It is shown that the observed increase in cross-modulation can be attributed to the fact that in the saturated condition the stored charge in the transistor will depend noulinearly on the collector current. The cross-modulation fac... View full abstract»

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  • A high-performance lateral geometry transistor for complementary integrated circuits

    Publication Year: 1967, Page(s):381 - 385
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    The lateral geometry transistor has shown itself to be highly useful in the realization of low-frequency integrated circuits. This simple structure has been limited essentially to dc applications, however, by bandwidth and switching time performance. The p-n-p device to be described in this paper substantially overcomes these deficiencies by the addition of an n+ diffusion directly beneath the emi... View full abstract»

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  • The characterization of the static behavior of p-n junction devices

    Publication Year: 1967, Page(s):385 - 395
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1000 KB)

    This paper examines the static behavior of certain p-n junction devices that are governed by Van Roosbroeck's differential equations. It is found that this set of first-order differential equations accurately predicts semiconductor static behavior in both the bulk and the transition regions. The purpose of this model is to find the hole and electron concentrations, hole and electron currents, and ... View full abstract»

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  • Tunable, high-power ferrite frequency doubler

    Publication Year: 1967, Page(s):395 - 400
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    The development of a high-efficiency, tunable ferrite frequency doubler operating at 17.0 GHz is described. The optimum efficiencies are from 30 to 40 percent, with incident power levels up to 10 kW peak, 3.0 watts average. The doubler consists of a yttrium-iron-garnet (YIG) disk located at the junction of X- and Ku-band rectangular waveguides. At... View full abstract»

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  • Reverse transient in p-n-p-n triodes

    Publication Year: 1967, Page(s):400 - 402
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    A detailed analysis is presented of the reverse transient in a p-n-p-n triode when a reverse pulse is applied to its gate. Charge analysis as proposed by Baker et al. for p-n-p-n diodes has been extended to cover triodes. Analytical expressions for all phases of the transient consisting of two storage and two fall times have been obtained. Lateral biasing effects due to current flow in the gate ha... View full abstract»

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  • Nondestructive determination of MOSFET gate breakdown voltage

    Publication Year: 1967, Page(s):402 - 403
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    A method is presented which allows the gate breakdown of a MOSFET to be nondestructively determined. The method applies a linear ramp voltage across the gate, allowing the leakage component to be easily separated from the capacitive currents. In this manner, the leakage component can be measured before it becomes large enough to cause a destructive dielectric breakdown in the gate oxide. View full abstract»

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  • CW three-terminal GaAs oscillator

    Publication Year: 1967, Page(s):403 - 404
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    Three-terminal GaAs devices have oscillated coherently at frequencies between 60 MHz and 2500 MHz. Continuous power outputs at room temperature are generally less than 1 mW. Typical units are fabricated from GaAs p-n diodes by sawing into the n side with an 0.0005- or 0.001-inch tungsten wire to a depth close to the depletion region. The resultant device has an n contact on either side of the cut ... View full abstract»

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  • [Back cover]

    Publication Year: 1967, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Politecnico di Torino,
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