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Electron Devices, IEEE Transactions on

Issue 6 • Date June 1967

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Page(s): c1
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    Freely Available from IEEE
  • A charge-storage diode Vidicon camera tube

    Page(s): 285 - 291
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    A theory is given for the design of junction diodes which can simultaneously exhibit high photosensitivity and a reverse-biased dark charge-storage time greater than 1/30 second with calculations specifically carried out for silicon and germanium photo-junctions. The charge-storage problem associated with the use of narrower bandgap materials as vidicon targets is thus overcome, and a microarray of such junctions can be used as the photosensitive target at room temperature. Experimental data are presented for single element photo junctions in silicon, constructed according to the theoretical specifications for obtaining long time dark state charge storage. It is established that present state-of-the-art microelectronic technology is applicable to the production of the mosaic junction arrays necessary for constructing a completed camera tube. View full abstract»

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  • The field-effect tube, a new device for generating and amplifying RF energy

    Page(s): 292 - 296
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    The paper describes a tube in which the intensity of a short hollow beam of electrons is modulated by varying the electric field in the emitter-collector space. The modulating electrode (gate) surrounds the beam but intercepts only a marginal number of electrons because an axial magnetic field prevents divergence of the beam. In spite of the relatively low gm, very high power gains are possible in the kHz and MHz region. At higher frequencies, transit-time effects reduce seriously both gain and efficiency. Operation at UHF is possible when high voltages and close spacings are used but this necessitates the use of high current density cathodes such as porous tungsten stypes. Rather low knee voltages can be obtained if returning electrodes are reflected towards the center of the emitter. Field-Effect tubes show advantages above gridded tubes in applications where wide load-impedance fluctuations can be expected and where extreme ruggedness is required such as sonar, induction, and dielectric heating. View full abstract»

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  • Field theory on excitation of space-charge waves through a gridless modulating gap

    Page(s): 297 - 301
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    A novel field-theoretic approach is presented to treat the system composed of a drift tube, a gridless modulating gap and an electron beam. It is mentioned that no space-charge wave can propagate just to the front of the plane of discontinuity of the electronic waveguide. The field component is expressed by a Fourier integral, and the amplitude of any of the excited space-charge waves is calculated from the residue at the corresponding pole, in a way similar to the one used for a passive waveguide. The analysis is applicable to the case of an arbitrary field distribution over the gap, not only the single gap but also the multiple gap. It is shown that the ratio of the amplitude of any excited space-charge wave to that of the lowest is independent of the field distribution over the gap. Finally, the beam loading is derived from the standpoint of the space-charge wave theory and is compared with this by the ballistic theory. View full abstract»

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  • PPM focusing of convergent beams emerging from partially shielded cathodes

    Page(s): 301 - 305
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    Beam entrance conditions were investigated for PPM focusing of a convergent electron beam emerging from a cathode partially shielded from the magnetic field. The investigation was carried out with the aid of an analog computer and has resulted in a useful design procedure. A discussion of the theoretical aspects of the design procedure is presented along with verifying computer results. Experimental results which show close agreement with computer results are also presented. View full abstract»

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  • The physical mechanism of the chargistor in terms of minority carrier exclusion and injection

    Page(s): 306 - 313
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    The chargistor, invented by Yu [1], is here found to consist of a somewhat different structure. He reported the mechanism of its operation in terms of both minority carrier exclusion and high level injection. Three types of electrical behavior are distinguished. Characteristic curves, potential plots, and transconductance data are given. View full abstract»

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  • Small-signal impedance of avalanching junctions with unequal electron and hole ionization rates and drift velocities

    Page(s): 313 - 322
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    A small-signal analysis of an avalanching semiconductor junction is presented for unequal electron and hole ionization rates and saturated drift velocities. The model consists of a thin ionization layer in a thicker depletion layer. The ionization rates are assumed independent of distance in the ionization layer and zero elsewhere. This analysis is an improvement of Read's, and is sufficiently realistic to predict most of the small-signal characteristics shown by the computer analysis of Misawa. The linearized differential equations describing the ionization layer are solved with the ionization rates perturbed by the ac electric field. The ac junction impedance is calculated from the solutions of the differential equations. Although the small-signal analysis does not predict the conversion efficiency of an avalanche diode oscillator, it does predict the threshold conditions for oscillation. It may also help predict the conditions for maximum efficiency through knowledge of the input power and the Q of the diode at the onset of oscillation. View full abstract»

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  • Small-signal impedance of bulk semiconductor amplifier having a nonuniform doping profile

    Page(s): 323 - 329
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    A convenient method for studying the small-signal impedance of a bulk semiconductor amplifier having a nonuniform doping profile is presented. The small-signal impedance is represented as a two-dimensional sum of the interaction impedance which represents the electrical interaction between various sections in the amplifier due to the transport effect. When the diffusion current is negligible, the two-dimensional plot of the magnitude of the interaction impedance shows which part of it is important. The two-dimensional representation may provide a convenient method of synthesizing the doping profile of a bulk semiconductor amplifier which gives a desired impedance characteristic. View full abstract»

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  • A bilateral silicon switch

    Page(s): 330 - 333
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    The bilateral switch is a new semiconductor device which abruptly lowers its impedance as a result of the application of a voltage of sufficient amplitude. The switch is used for pulse generation, and more specifically for the precise firing of Triacs and silicon controlled rectifiers. The switch is in the form of a monolithic circuit of the planar passivated type. The tested device has a switching voltage of 6.4 V at 25°C, and the temperature coefficient is less than 0.05 percent/°C. The dc forward current is 200 mA, the peak forward current is 1 A, based on a 10-µs pulsewidth, 1-percent duty cycle, and an ambient temperature of 100°C. The paper describes the principle of operation, the basic design, and shows test data. View full abstract»

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  • On the measurement of nanosecond recovery time in receiver protectors

    Page(s): 334 - 336
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    The measurement of the recovery period in multistage receiver protectors is analyzed. It is shown that the accepted IEEE definition is unsatisfactory for the recent class of fast-recovery receiver protectors. We consider here the problem encountered when the recovery period is roughly equal to the falltime of the main transmitter pulse. It is found that accurate measurements are possible only when the reference point for the recovery measurement is taken at the singular power point located on the falling edge of the transmitter pulse which is equal to the extinguishing power of the stage which has the longest recovery period. Consequently, an alternate definition is offered which is adequate for all classes of duplexers and receiver protectors. View full abstract»

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  • Noise in p-n-p-n diodes

    Page(s): 336 - 338
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    First Page of the Article
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  • [Back cover]

    Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology