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Electron Devices, IEEE Transactions on

Issue 6 • Date June 1967

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1967 , Page(s): c1
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    Freely Available from IEEE
  • A charge-storage diode Vidicon camera tube

    Publication Year: 1967 , Page(s): 285 - 291
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (816 KB)  

    A theory is given for the design of junction diodes which can simultaneously exhibit high photosensitivity and a reverse-biased dark charge-storage time greater than 1/30 second with calculations specifically carried out for silicon and germanium photo-junctions. The charge-storage problem associated with the use of narrower bandgap materials as vidicon targets is thus overcome, and a microarray o... View full abstract»

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  • The field-effect tube, a new device for generating and amplifying RF energy

    Publication Year: 1967 , Page(s): 292 - 296
    Request Permissions | Click to expandAbstract | PDF file iconPDF (576 KB)  

    The paper describes a tube in which the intensity of a short hollow beam of electrons is modulated by varying the electric field in the emitter-collector space. The modulating electrode (gate) surrounds the beam but intercepts only a marginal number of electrons because an axial magnetic field prevents divergence of the beam. In spite of the relatively low gm, very high power gains are ... View full abstract»

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  • Field theory on excitation of space-charge waves through a gridless modulating gap

    Publication Year: 1967 , Page(s): 297 - 301
    Request Permissions | Click to expandAbstract | PDF file iconPDF (456 KB)  

    A novel field-theoretic approach is presented to treat the system composed of a drift tube, a gridless modulating gap and an electron beam. It is mentioned that no space-charge wave can propagate just to the front of the plane of discontinuity of the electronic waveguide. The field component is expressed by a Fourier integral, and the amplitude of any of the excited space-charge waves is calculate... View full abstract»

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  • PPM focusing of convergent beams emerging from partially shielded cathodes

    Publication Year: 1967 , Page(s): 301 - 305
    Cited by:  Papers (1)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (392 KB)  

    Beam entrance conditions were investigated for PPM focusing of a convergent electron beam emerging from a cathode partially shielded from the magnetic field. The investigation was carried out with the aid of an analog computer and has resulted in a useful design procedure. A discussion of the theoretical aspects of the design procedure is presented along with verifying computer results. Experiment... View full abstract»

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  • The physical mechanism of the chargistor in terms of minority carrier exclusion and injection

    Publication Year: 1967 , Page(s): 306 - 313
    Cited by:  Patents (1)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (824 KB)  

    The chargistor, invented by Yu [1], is here found to consist of a somewhat different structure. He reported the mechanism of its operation in terms of both minority carrier exclusion and high level injection. Three types of electrical behavior are distinguished. Characteristic curves, potential plots, and transconductance data are given. View full abstract»

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  • Small-signal impedance of avalanching junctions with unequal electron and hole ionization rates and drift velocities

    Publication Year: 1967 , Page(s): 313 - 322
    Cited by:  Papers (16)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (768 KB)  

    A small-signal analysis of an avalanching semiconductor junction is presented for unequal electron and hole ionization rates and saturated drift velocities. The model consists of a thin ionization layer in a thicker depletion layer. The ionization rates are assumed independent of distance in the ionization layer and zero elsewhere. This analysis is an improvement of Read's, and is sufficiently rea... View full abstract»

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  • Small-signal impedance of bulk semiconductor amplifier having a nonuniform doping profile

    Publication Year: 1967 , Page(s): 323 - 329
    Cited by:  Papers (3)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (560 KB)  

    A convenient method for studying the small-signal impedance of a bulk semiconductor amplifier having a nonuniform doping profile is presented. The small-signal impedance is represented as a two-dimensional sum of the interaction impedance which represents the electrical interaction between various sections in the amplifier due to the transport effect. When the diffusion current is negligible, the ... View full abstract»

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  • A bilateral silicon switch

    Publication Year: 1967 , Page(s): 330 - 333
    Cited by:  Papers (3)  |  Patents (4)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (392 KB)  

    The bilateral switch is a new semiconductor device which abruptly lowers its impedance as a result of the application of a voltage of sufficient amplitude. The switch is used for pulse generation, and more specifically for the precise firing of Triacs and silicon controlled rectifiers. The switch is in the form of a monolithic circuit of the planar passivated type. The tested device has a switchin... View full abstract»

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  • On the measurement of nanosecond recovery time in receiver protectors

    Publication Year: 1967 , Page(s): 334 - 336
    Cited by:  Papers (1)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (440 KB)  

    The measurement of the recovery period in multistage receiver protectors is analyzed. It is shown that the accepted IEEE definition is unsatisfactory for the recent class of fast-recovery receiver protectors. We consider here the problem encountered when the recovery period is roughly equal to the falltime of the main transmitter pulse. It is found that accurate measurements are possible only when... View full abstract»

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  • Noise in p-n-p-n diodes

    Publication Year: 1967 , Page(s): 336 - 338
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (240 KB)  

    First Page of the Article
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  • Minimum yield for economical probing of semiconductor devices

    Publication Year: 1967 , Page(s): 338 - 339
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    First Page of the Article
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  • [Back cover]

    Publication Year: 1967 , Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego