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IEEE Transactions on Electron Devices

Issue 5 • May 1967

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Device modeling

    Publication Year: 1967, Page(s):229 - 232
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    Models of electronic devices have to express the physical structure of the device, represent its significant properties, and lead to useful equivalent circuits for circuit analysis. The criteria by which a model can be said to achieve each of these three functions are explored and it is shown, with particular reference to transistors, that the demands of each function are so different that no prev... View full abstract»

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  • A model of the avalanche photodiode

    Publication Year: 1967, Page(s):233 - 238
    Cited by:  Papers (7)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (584 KB)

    A general model for the avalanche photodiode is presented. It is shown that the diode consists of four regions: 1) guard ring, 2) uniform avalanche region, 3) high-field absorption region and 4) zero-field absorption region. Expressions are given for the ac quantum efficiency, the dc quantum efficiency, and the transit time cutoff frequency. Material requirements are discussed. Based on an entire ... View full abstract»

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  • An optimized avalanche photodiode

    Publication Year: 1967, Page(s):239 - 251
    Cited by:  Papers (66)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1352 KB)

    The feasibility of a fast, high-gain photodetector based on the phenomenon of avalanche multiplication in semiconductors has been investigated. Based on the process of carrier multiplication in a high electric field, criteria for the design of an optimized avalanche photodiode and for the choice of the best semiconductor material are developed. The device theory of an optimized, realizable avalanc... View full abstract»

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  • Parametric effects in a microwave Read avalanche diode

    Publication Year: 1967, Page(s):251 - 259
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (599 KB)

    The parametric effects in the microwave Read avalanche diode are studied using a simplified one-dimensional model. The signals of frequencies ω1and ω2interact with each via the pumping wave of frequencyomega_{0} = omega_{1} + omega_{2}, through the nonlinearity in avalanche. This paper shows the range in which the microwave Read avalanche diode has the pa... View full abstract»

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  • Thermal properties of high-power transistors

    Publication Year: 1967, Page(s):260 - 263
    Cited by:  Papers (64)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (392 KB)

    The temperature of a transistor can be determined from the emitter-base voltage versus collector-current characteristic. This characteristic was used for studying the stability of parallel pairs of high-frequency high-power transistors. The thermal effect may cause the incremental emitter-base resistance to assume a negative value. This, in turn, will cause the current flow in a pair of transistor... View full abstract»

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  • Electron-optical analog study of image tubes with different types of cathodes

    Publication Year: 1967, Page(s):264 - 266
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB)

    Electron trajectory analog measurements for image tubes show that the serious aberrations of distortion and curvature of the image field, inherent to flat unipotential photocathodes, can be reduced by using a flat gradient cathode. Similar potential distributions as with curved cathodes are thus established. The resulting curvatures of the equipotential surfaces in the vicinity of the flat gradien... View full abstract»

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  • High current density operation of oxide cathodes

    Publication Year: 1967, Page(s):267 - 272
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2248 KB)

    Oxide-coated cathodes have been used widely in electron tubes due to its high-emission efficiency at low operating temperatures. The maximum limit for dc emission of oxide cathodes has been considered at 0.5 A/cm2due to limitations of sparking or overheating due to Joule effect. We have tested successfully oxide cathodes at operating temperatures of 1000°K at current levels from 1.... View full abstract»

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  • The beam-loading admittance of gridless klystron gaps

    Publication Year: 1967, Page(s):273 - 278
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    Expressions for the beam-loading conductance for an electron beam have been derived in Branch and Vlasov. This paper shows that the beam-loading susceptance is the Hilbert transform of the conductance. The expressions for the admittance of the ideal gridded gap and the gridless gap are then derived. In particular, curves of G/G0and B/G0are presented for gridless gaps with dif... View full abstract»

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  • An integrated unijunction structure

    Publication Year: 1967, Page(s): 279
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (168 KB)

    First Page of the Article
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  • The velocity fluctuation noise in field emission devices

    Publication Year: 1967, Page(s): 280
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (112 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1967, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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