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IEEE Transactions on Electron Devices

Issue 3 • March 1967

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • The resonant gate transistor

    Publication Year: 1967, Page(s):117 - 133
    Cited by:  Papers (590)  |  Patents (39)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1937 KB)

    A device is described which permits high-Qfrequency selection to be incorporated into silicon integrated circuits. It is essentially an electrostatically excited tuning fork employing field-effect transistor "readout." The device, which is called the resonant gate transistor (RGT), can be batch-fabricated in a manner consistent with silicon technology. Experimental RGT's with gold vibra... View full abstract»

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  • A model for shifts in the gate turn-on voltage of insulated-gate field-effect devices induced by ionizing radiation

    Publication Year: 1967, Page(s):134 - 138
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    Insulated gate field-effect devices with thermally grown silicon dioxide and deposited nitride insulation were subjected to electron irradiation up to a total dose of sufficient magnitude to establish dynamic equilibrium. The resultant linear shift of the gate turn-on voltage with applied gate bias over a wide range of biasing conditions has been interpreted by a model postulating a positive space... View full abstract»

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  • Frequency response of PIN avalanching photodiodes

    Publication Year: 1967, Page(s):139 - 145
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (649 KB)

    The frequency response of a PIN avalanching photodiode has been analyzed without the usual assumption that the electrons and the holes have equal ionization rates (alpha_{n} = alpha_{p}) and equal scattering-limited velocities (v_{n} = v_{p}). A general formula for the frequency response is first derived for the case in which the photons are absorbed in the space charge regio... View full abstract»

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  • Properties of avalanche injection and its application to fast pulse generation and switching

    Publication Year: 1967, Page(s):146 - 157
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1480 KB)

    The positive- and negative-resistance characteristics of the avalanche-injection diode are derived from a set of fundamental equations. The field dependence of the ionization rate-constant, the resistivity of the avalanching region, and the injected current are taken into account to compute the final voltage-current characteristics. From these characteristics, the transient electrical time constan... View full abstract»

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  • Effect of surface fields on the breakdown voltage of planar silicon p-n junctions

    Publication Year: 1967, Page(s):157 - 162
    Cited by:  Papers (121)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (643 KB)

    The effect of surface fields on the breakdown voltage of planar silicon diodes is studied experimentally and theoretically. It is shown that the breakdown voltage can be modulated over a very wide range by the application of an external surface field and that it tends to saturation at a maximum and at a minimum value as the gate voltage is varied in such a way as to deplete the lowly doped and hig... View full abstract»

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  • A mixed-field type of Vidicon

    Publication Year: 1967, Page(s):163 - 170
    Cited by:  Papers (16)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1304 KB)

    A new type of Vidicon has been developed which uses magnetic focus and electrostatic deflection. Since both fields are superimposed in the same space, Focus Projection and Scanning (FPS) is accomplished simultaneously. In this way, Vidicon tubes of very compact size can be realized (typically a format of 1 inch by 4½ inches overall). The electron optics of this FPS system is outlined. It is d... View full abstract»

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  • Corrections [to "Static V-I relationships in transistors at high injection levels"]

    Publication Year: 1967, Page(s): 170
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (94 KB)

    For the above-named work, which appeared on pages 692-700 of the October, 1966, issue of this Transactions, the paragraph on page 696 which contains Eqs. (1) through (3) is corrected, revising these equations. View full abstract»

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  • Corrections [to "Transistor failure by secondary breakdown"]

    Publication Year: 1967, Page(s): 170
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (94 KB)

    The authors of the above-named work, which appeared on pages 651-655 of the August/September, 1966, issue of this Transactions, note that Equations (10) and (16) are incorrect as originally given. Revised versions are provided. View full abstract»

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  • Noise-figure expressions for crossed-field amplifiers

    Publication Year: 1967, Page(s):171 - 172
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    Noise-figure expressions for crossed-field amplifiers are presented in a compact and unified form by making use of normal-mode amplitudes. Expressions are given for space-charge-wave amplifiers and cyclotron-wave amplifiers, and are applicable for both forward- and backward-wave amplifiers when the power gain appropriate to each amplifier is used. View full abstract»

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  • Noise in p-i-n junction diodes

    Publication Year: 1967, Page(s):172 - 173
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (222 KB)

    It is the aim of this correspondence to give noise measurements for p-i-n diodes. As will be seen, the results are comparable to those obtained for normal p-n diodes. View full abstract»

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  • A crossed-field gain mechanism employing discontinuities

    Publication Year: 1967, Page(s):173 - 174
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (241 KB)

    An extension of an earlier analysis by the author gives results which predict a gain enhancement in a crossed-field amplifier via discontinuities. The discontinuities are introduced into the slowwave structure as short drift-tube sections. The resultant gain is larger than could be obtained without the interspersed drift-tube sections, i.e., larger than would be obtained with an equivalent length ... View full abstract»

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  • Nonreciprocal tunnel diode distributed amplifier

    Publication Year: 1967, Page(s):174 - 175
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (232 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1967, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it