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IEEE Transactions on Electron Devices

Issue 2 • Date Feb. 1967

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Theoretical study of a Gunn diode in a resonant circuit

    Publication Year: 1967, Page(s):55 - 58
    Cited by:  Papers (42)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (448 KB)

    A computer simulation of a GaAs Gunn diode in a parallel resonant circuit has been made to determine the optimum device and circuit parameters. The maximum dc to RF efficiency, 5 to 8 percent, is obtained when the product of doping and length is between 1012and 2 × 1012cm-2, the product of frequency and length is 107cm/s, and the bias voltage divide... View full abstract»

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  • Temperature effects in bulk GaAs amplifiers

    Publication Year: 1967, Page(s):59 - 62
    Cited by:  Papers (13)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    The microwave-gain characteristics of a bulk GaAs amplifier have been investigated experimentally as a function of temperature. The resistivity of the samples showed a strong temperature dependence, hence the results have been interpreted in terms of changing carrier concentration assuming a constant mobility. It has been found that stable amplification only occurs within a narrow range of tempera... View full abstract»

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  • The capacitance of p-n heterojunctions including the effects of interface states

    Publication Year: 1967, Page(s):63 - 68
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (584 KB)

    The theoretical capacitance of abrupt p-n heterojunctions including the effects of interface states is examined. The interface effects depend on the bulk impurity concentrations and their ratio, as well as the density and distribution of interface states. In the Ge-GaAs junctions studied, the impurity concentrations and density of interface states are such that interface effects have only a neglig... View full abstract»

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  • Analysis of double-gate thin-film transistor

    Publication Year: 1967, Page(s):69 - 74
    Cited by:  Papers (14)  |  Patents (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    An analysis is made of a double-gate thin-film transistor structure, and equations are derived for current flow for different input conditions on each gate. The use of two independent gates allows the possibility of simultaneously maintaining depletion and enhancement regions along the channel, and Poisson's equation is used to find the field and potential distribution along the channel. It is sho... View full abstract»

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  • Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices

    Publication Year: 1967, Page(s):75 - 81
    Cited by:  Papers (7)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (728 KB)

    An analysis of devices with drift fields formed by an impurity gradient is carried out allowing for lifetime and mobility variations with impurity concentration. In the case of silicon n-on-p photovoltaic solar cells, a field width of about twice the diffusion length of the minority carriers maximizes the collection efficiency. For lifetimes longer than one microsecond the optimum field width is a... View full abstract»

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  • A transient component in the breakdown voltage of silicon p-n junction rectifiers

    Publication Year: 1967, Page(s):81 - 86
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    A transient component in the breakdown voltage of silicon n+-p junctions, at the onset of breakdown in the region of intermittent microplasma conduction, has been studied. The rates of transition from initial to final values of VBhave been found to be proportional to the relative on-time of the microplasma pulses, and the magnitude of the change in VBreaches a maxi... View full abstract»

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  • Circuit aspects of transistor parametric frequency doublers

    Publication Year: 1967, Page(s):86 - 89
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    Factors determining the performance of a transistor parametric frequency doubler are considered from the transistor equivalent network viewpoint, emphasising the integral nature of the active and parametric regions. On the basis of a simple transistor model connected as a frequency doubler, it is shown that a higher loading of the harmonic circuit is required than for a conventional varactor multi... View full abstract»

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  • Measurements on nonlinear space-charge waves

    Publication Year: 1967, Page(s):89 - 97
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB)

    Results of measurements on the nonlinear ac currents in a velocity modulated confined electron beam are reported. The test vehicle is a two cavity klystron type device with an axially movable demodulator. The ac beam currents at the fundamental and at the two lowest harmonic frequencies have been measured as functions of the distance along the beam for various modulation levels and dc beam current... View full abstract»

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  • The effect of various design parameters on the performance of medium-power traveling-wave tubes

    Publication Year: 1967, Page(s):97 - 101
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    In the design of traveling-wave tubes, the effect of changing such design parameters as beam current, frequency, or helix diameter is usually not immediately obvious. This paper makes the effect of some major design parameters more apparent by introducing certain approximations. Within the limits of the approximations, the gain-helix radius product is shown to depend only on beam perveance and a g... View full abstract»

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  • Minimum noise figure for magnetron injection guns

    Publication Year: 1967, Page(s):102 - 109
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (776 KB)

    A minimum noise figure has been derived for the magnetron injection gun. This theoretical expression is based upon RF equations which were developed to calculate the transport of current and velocity fluctuations along a planar 3-dimensional space-charge flow. Current and velocity fluctuations at the magnetron gun output were found to be correlated regardless of the assumed cathode conditions. The... View full abstract»

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  • Field-dependent mobility effects in the excess noise of junction-gate field-effect transistors

    Publication Year: 1967, Page(s):110 - 111
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (216 KB)

    According to Sah's theory (1964) of excess noise in junction-gate field effect transistors the equivalent saturated diode current Ieq of the drain noise should vary as Vd5/2 below saturation (where Vd is the drain to source voltage) and rapidly turn over into its saturated value at saturation. Experimentally, one finds in many units that Ieqa ries as Vd5/2 at low currents, ro... View full abstract»

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  • Equivalent two-port thermal-noise representation of metal-oxide semiconductor transistors

    Publication Year: 1967, Page(s):111 - 112
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (194 KB)

    In this contribution, the authors suggest that the simplification of a single equivalent-noise generator or an equivalent-noise resistance can be a misleading step and useful only where the operating conditions, and the input terminations yield noise-figures far removed from the optimum. View full abstract»

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  • [Back cover]

    Publication Year: 1967, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
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