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Electron Devices, IEEE Transactions on

Issue 2 • Date Feb. 1967

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1967 , Page(s): c1
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    Freely Available from IEEE
  • Theoretical study of a Gunn diode in a resonant circuit

    Publication Year: 1967 , Page(s): 55 - 58
    Cited by:  Papers (38)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (448 KB)  

    A computer simulation of a GaAs Gunn diode in a parallel resonant circuit has been made to determine the optimum device and circuit parameters. The maximum dc to RF efficiency, 5 to 8 percent, is obtained when the product of doping and length is between 1012and 2 × 1012cm-2, the product of frequency and length is 107cm/s, and the bias voltage divided by length is 8000 V/cm for a load resistance of 30 R_{0} where R0is the low-voltage resistance of the diode. The product of output power and load resistance varies with frequency f as C f^{2} where C is 12,000 watt-ohm-GHz2for a load resistance of 50 R_{0} . The frequency can be varied over an octave tuning range by the resonant circuit. View full abstract»

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  • Temperature effects in bulk GaAs amplifiers

    Publication Year: 1967 , Page(s): 59 - 62
    Cited by:  Papers (10)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (440 KB)  

    The microwave-gain characteristics of a bulk GaAs amplifier have been investigated experimentally as a function of temperature. The resistivity of the samples showed a strong temperature dependence, hence the results have been interpreted in terms of changing carrier concentration assuming a constant mobility. It has been found that stable amplification only occurs within a narrow range of temperature (carrier concentration). The highest n . L product (carrier density × sample length) for which gain has been observed was about 5 . 1011cm-2, and this is in agreement with earlier results and theory. Amplification did not occur below n . L = 8 . 10^{10} cm-2. The frequency band where negative conductance appears was found to be strongly dependent on temperature (carrier density) and bias field. Noise figures, measured at temperatures where gain occurred, lay between 20 and 30 dB. Noise figure appears to be nearly independent of temperature. Gain versus field measurements on a stable amplifier indicate that the peak field of the velocity-field curve is about 4000 V/cm. Gain versus frequency and noise figure have also been measured on a bulk semiconductor amplifier which was operated with a coaxial transformer to increase the gain over a broad microwave frequency range. View full abstract»

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  • The capacitance of p-n heterojunctions including the effects of interface states

    Publication Year: 1967 , Page(s): 63 - 68
    Cited by:  Papers (9)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (584 KB)  

    The theoretical capacitance of abrupt p-n heterojunctions including the effects of interface states is examined. The interface effects depend on the bulk impurity concentrations and their ratio, as well as the density and distribution of interface states. In the Ge-GaAs junctions studied, the impurity concentrations and density of interface states are such that interface effects have only a negligible influence on the capacitance of these devices. Interface states have a considerable effect on the capacitance of the Ge-Si junctions studied, however. They affect the apparent diffusion voltages obtained by extrapolating 1/C2to zero and add a significant frequency-dependent term on many diodes. The frequency-dependent term is due to the rate limited charging and discharging of interface states. View full abstract»

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  • Analysis of double-gate thin-film transistor

    Publication Year: 1967 , Page(s): 69 - 74
    Cited by:  Papers (3)  |  Patents (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (472 KB)  

    An analysis is made of a double-gate thin-film transistor structure, and equations are derived for current flow for different input conditions on each gate. The use of two independent gates allows the possibility of simultaneously maintaining depletion and enhancement regions along the channel, and Poisson's equation is used to find the field and potential distribution along the channel. It is shown that by proper manipulation of the second gate, characteristic curves ranging from the normal TFT "pentode" curves to "triode" curves can be obtained from the same device. A comparison is given of experimental and theoretical results. View full abstract»

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  • Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices

    Publication Year: 1967 , Page(s): 75 - 81
    Cited by:  Papers (6)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (728 KB)  

    An analysis of devices with drift fields formed by an impurity gradient is carried out allowing for lifetime and mobility variations with impurity concentration. In the case of silicon n-on-p photovoltaic solar cells, a field width of about twice the diffusion length of the minority carriers maximizes the collection efficiency. For lifetimes longer than one microsecond the optimum field width is about 25 µm, a value governed by the absorption characteristics rather than the diffusion length. In most cases, increasing the concentration ratio above 3 orders of magnitude is of little or no assistance in improving the collection efficiency. It is also shown that if the constant relating lifetime to high energy-particle flux is a strong function of impurity concentration, there is little advantage in using drift-field solar cell structures to enhance radiation resistance. View full abstract»

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  • A transient component in the breakdown voltage of silicon p-n junction rectifiers

    Publication Year: 1967 , Page(s): 81 - 86
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (672 KB)  

    A transient component in the breakdown voltage of silicon n+-p junctions, at the onset of breakdown in the region of intermittent microplasma conduction, has been studied. The rates of transition from initial to final values of VBhave been found to be proportional to the relative on-time of the microplasma pulses, and the magnitude of the change in VBreaches a maximum at the temperature at which the position of the equilibrium Fermi level coincides with the energy level of the trapping centers. The effect is explained on the basis of the filling of traps during microplasma conduction, thus changing the net ionized impurity concentration and hence the breakdown voltage. View full abstract»

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  • Circuit aspects of transistor parametric frequency doublers

    Publication Year: 1967 , Page(s): 86 - 89
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    Factors determining the performance of a transistor parametric frequency doubler are considered from the transistor equivalent network viewpoint, emphasising the integral nature of the active and parametric regions. On the basis of a simple transistor model connected as a frequency doubler, it is shown that a higher loading of the harmonic circuit is required than for a conventional varactor multiplier. By use of circuit models which incorporate parasitics inherent in a high-power, high-frequency planar transistor structure, it is shown that more efficient pumping of the varactor region is possible than would be predicted from the standard equivalent circuit models. View full abstract»

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  • Measurements on nonlinear space-charge waves

    Publication Year: 1967 , Page(s): 89 - 97
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    Results of measurements on the nonlinear ac currents in a velocity modulated confined electron beam are reported. The test vehicle is a two cavity klystron type device with an axially movable demodulator. The ac beam currents at the fundamental and at the two lowest harmonic frequencies have been measured as functions of the distance along the beam for various modulation levels and dc beam currents. The work provides experimental data in the transition range between linear space-charge wave-type and ballistic-type behavior of the ac beam current. The experimental results are in good agreement with the nonlinear space-charge wave theory. View full abstract»

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  • The effect of various design parameters on the performance of medium-power traveling-wave tubes

    Publication Year: 1967 , Page(s): 97 - 101
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (528 KB)  

    In the design of traveling-wave tubes, the effect of changing such design parameters as beam current, frequency, or helix diameter is usually not immediately obvious. This paper makes the effect of some major design parameters more apparent by introducing certain approximations. Within the limits of the approximations, the gain-helix radius product is shown to depend only on beam perveance and a geometry-determined factor F. For a given geometry (defined as the ratios of all radial dimensions), C and QC are derived from \gamma a and beam perveance. Thus, universal graphs for gain per unit length, C and QC , are evolved. By keeping \gamma a , beam perveance and tube geometry invariable, the RF behavior of traveling-wave tubes can be preserved. Consequently, scaling equations for traveling-wave tubes can be derived, and are presented in this paper. View full abstract»

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  • Minimum noise figure for magnetron injection guns

    Publication Year: 1967 , Page(s): 102 - 109
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    A minimum noise figure has been derived for the magnetron injection gun. This theoretical expression is based upon RF equations which were developed to calculate the transport of current and velocity fluctuations along a planar 3-dimensional space-charge flow. Current and velocity fluctuations at the magnetron gun output were found to be correlated regardless of the assumed cathode conditions. The resultant minimum noise figure expression incorporating correlation is valid for any planar, lossless O-type device utilizing a magnetron injection gun. The variations of magnetron gun-velocity fluctuations, current fluctuations, and minimum noise figure versus transit angle and cathode-magnetic field angle were plotted assuming that the noise at the potential minimum consisted of the traditional values of uncorrelated shot current and mean-square velocity fluctuations. The noise figure for the other values of the dc magnetron-gun parameters and assumed cathode-noise conditions are easily calculated since all expressions are in closed mathematical form. Comparisons between this theoretical minimum noise figure and the noise performance of an operational multicavity klystron were made. View full abstract»

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  • Field-dependent mobility effects in the excess noise of junction-gate field-effect transistors

    Publication Year: 1967 , Page(s): 110 - 111
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (216 KB)  

    According to Sah's theory (1964) of excess noise in junction-gate field effect transistors the equivalent saturated diode current Ieq of the drain noise should vary as Vd5/2 below saturation (where Vd is the drain to source voltage) and rapidly turn over into its saturated value at saturation. Experimentally, one finds in many units that Ieqa ries as Vd5/2 at low currents, roughly as Vd3/2 at intermediate currents and that IeQ gradually turns over into its saturated value at saturation. We shall see that this behavior can be explained by field-dependent mobility effects. View full abstract»

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  • Equivalent two-port thermal-noise representation of metal-oxide semiconductor transistors

    Publication Year: 1967 , Page(s): 111 - 112
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (194 KB)  

    In this contribution, the authors suggest that the simplification of a single equivalent-noise generator or an equivalent-noise resistance can be a misleading step and useful only where the operating conditions, and the input terminations yield noise-figures far removed from the optimum. View full abstract»

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  • [Back cover]

    Publication Year: 1967 , Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego