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IEEE Transactions on Electron Devices

Issue 1 • Date Jan. 1967

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1967, Page(s): c1
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    Freely Available from IEEE
  • Papers of fifth photovoltaic specialists conference

    Publication Year: 1967, Page(s): 2
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (160 KB)

    First Page of the Article
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  • An experimental study of drift-field silicon solar cells

    Publication Year: 1967, Page(s):3 - 9
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    Silicon solar cells were constructed with drift fields of various widths and magnitudes. Both initial performance and performance after irradiation with up to 10161 MeV electrons/cm2are compared with theory. Behavior is much as expected if the radiation damage is assumed to vary with doping level. This latter assumption leads to the conclusion that little change in cell perfo... View full abstract»

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  • Ion implantation as a production technique

    Publication Year: 1967, Page(s):10 - 17
    Cited by:  Papers (2)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1056 KB)

    This paper discusses the development of ion implantation techniques for the production of high efficiency n-on-p silicon solar cells. Although the process is still being optimized, ion-implanted cells are already competitive with diffusion produced cells, with air mass zero (AMO) efficiencies of 11 percent having been achieved. A high-current production machine capable of producing 10 000 cells/we... View full abstract»

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  • Some problems of the thin-film cadmium-sulfide solar cell

    Publication Year: 1967, Page(s):18 - 21
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    Studies were made of the degradation of 50 cm2cadmium-sulfide thin-film solar cells caused by exposure to humidity and simulated space environment. Uncovered cells and those laminated with Capran adhesive were degraded at rates proportional to the amount of moisture present. Cells that lost less than 50 percent of their original output could be restored completely by being heated in a v... View full abstract»

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  • A model for the CdS solar cell

    Publication Year: 1967, Page(s):22 - 25
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    The CdS solar cell is a photovoltaic device made from a thin-evaporated film of CdS and a chemically formed layer of copper sulfide. A model is presented which describes the formation of the p-type copper-sulfide layer into the n-type CdS material and the resulting p-n junction. The model explains the physical, electrical, and electrooptical properties of the device and its mode of operation. View full abstract»

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  • GaAs thin-film solar cells

    Publication Year: 1967, Page(s):26 - 30
    Cited by:  Papers (1)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    Thin-film solar cells utilizing polycrystalline gallium-arsenide films have been made and investigated to determine their suitability for future solar-power systems. The gallium-arsenide films are vapor deposited onto substrates of molybdenum or aluminum foil. Of the various junctions investigated, the most successful has been one consisting of a surface barrier employing an evaporated film of pla... View full abstract»

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  • An evaluation by solar simulation of radiation damage in silicon solar cells

    Publication Year: 1967, Page(s):31 - 36
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    From the viewpoint of the space power-systems designer, the most useful data for radiation-damaged solar cells is that of output power as a function of cell voltage, temperature, and radiation. This paper reviews the available results from laboratory radiation experiments where solar simulators were used. The solar cells studied were 1 and 10 ohm-cm n-on-p boron-doped cells, 5 and 10 ohm--cm alumi... View full abstract»

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  • Papers on carrier drift velocities in silicon at high electric field strengths

    Publication Year: 1967, Page(s): 37
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (112 KB)

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  • Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique

    Publication Year: 1967, Page(s):38 - 43
    Cited by:  Papers (33)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    In this paper we describe a time-of-flight technique which has been used to measure the drift velocities of carriers in silicon at high electric fields. Carrier velocities are determined absolutely by measuring the transit time of carriers through a region of approximately uniform electric field and known width in a p+-ν -n+diode. The transit time is obtained directly as... View full abstract»

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  • Measurement of the drift velocity of holes in silicon at high-field strengths

    Publication Year: 1967, Page(s):44 - 46
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    A method is presented which allows the measurement of the velocity-field relationship of charge carriers in a semiconductor. The device used is a four-layer structure. The mode of operation is based on the injection by punch-through of charge carriers into a long depleted region. The velocity can be determined from the VI characteristic of the device and its geometry. Drift velocity saturation is ... View full abstract»

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  • Electron drift velocity in avalanching silicon diodes

    Publication Year: 1967, Page(s):46 - 49
    Cited by:  Papers (27)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    The differential resistance of an avalanching p+nn+junction is used to obtain the electron drift velocity at electric fields where significant avalanching is occurring (2 × 105< E < 4 × 105V/cm). The velocity is also obtained as a function of temperature and is consistent with energetic phonon scattering. View full abstract»

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  • [Back cover]

    Publication Year: 1967, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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