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IEEE Transactions on Electron Devices

Issue 12 • Date Dec. 1966

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Displaying Results 1 - 25 of 30
  • [Front cover and table of contents]

    Publication Year: 1966, Page(s): c1
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    Freely Available from IEEE
  • Large-signal and small-signal models for arbitrarily-doped four-terminal field-effect transistors

    Publication Year: 1966, Page(s):819 - 829
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1119 KB)

    Models are derived for a four-terminal field-effect transistor (FTFET) with an arbitrary (one-dimensional) impurity distribution. The models apply for both four-terminal and conventional three-terminal devices operated in either the pinch-off or nonpinch-off modes; moreover, they describe behavior when either large or small signals are applied to the gates. The model parameters can be determined e... View full abstract»

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  • Signal and noise response of high speed germanium avalanche photodiodes

    Publication Year: 1966, Page(s):829 - 838
    Cited by:  Papers (41)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1156 KB)

    Germanium avalanche photodiodes, providing gain at microwave frequencies, have been fabricated and tested. The diodes employ a guard ring structure to achieve a uniform, microplasma-free, multiplying region with an active diameter of 40 microns. Low-frequency chopped light current gains of greater than 200, and small-signal 6 GHz current gains of greater than 10 have been obtained at room temperat... View full abstract»

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  • The spatial variation of the quasi-Fermi potentials in p-n junctions

    Publication Year: 1966, Page(s):839 - 846
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (783 KB)

    Approximate analytical solutions are obtained for symmetrical p-n junctions which provide the range of bias for constant quasi-Fermi potentials across the transition region under forward bias and small reverse bias. The solutions also show that the variations of the quasi-Fermi potentials are essentially complete in the transition region for large reverse bias. The actual spatial dependences are c... View full abstract»

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  • An analysis of deep depletion thin-film MOS transistors

    Publication Year: 1966, Page(s):846 - 855
    Cited by:  Papers (15)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1085 KB)

    Consideration is given to the problems associated with the use of an insulated gate to obtain depletion in the channel of a field-effect transistor. It is shown that if an inversion layer forms at the insulator semiconductor interface before the channel is completely depleted complete pinch-off of drain current by the gate will not be observed. It is further shown that channel pinch-off at the dra... View full abstract»

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  • Thin-film silicon-on-sapphire deep depletion MOS transistors

    Publication Year: 1966, Page(s):855 - 862
    Cited by:  Papers (25)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1003 KB)

    This paper describes thin-film MOS transistors in which the entire silicon film forms the conducting channel, not just the surface inversion layer. Single crystal silicon which is epitaxially deposited on sapphire to a thickness of 0.5 to 2.0 microns forms the channel of the field-effect transistor. The oxidations for the channel oxide were done in both steam and dry oxygen ambients resulting in v... View full abstract»

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  • Temperature dependence of MOS transistor characteristics below saturation

    Publication Year: 1966, Page(s):863 - 866
    Cited by:  Papers (27)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (401 KB)

    The temperature dependence of MOS transistor characteristics in the region below saturation is studied theoretically and experimentally. The variation of channel conductance with temperature is shown to be due to the variation of the threshold voltage and of the inversion layer mobility. Both variations can be predicted in reasonable agreement with experimental observations. It is shown that the r... View full abstract»

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  • The electrostrictor—A new type of electromechanical semiconductor oscillator

    Publication Year: 1966, Page(s):866 - 873
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1155 KB)

    An investigation is carried out of unexpected electrical oscillations generated across germanium crystals which are subjected to strong electric fields; the latter are obtained by the application of a current pulse through a small area metallic electrode. The oscillations are found to be of electromechanical nature; i.e., it is shown that the electrical oscillations are accompanied with mechanical... View full abstract»

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  • Avalanche breakdown of diffused silicon p-n junctions

    Publication Year: 1966, Page(s):874 - 881
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (853 KB)

    Using impact ionization rates of Moll et al. [23] and Lee et al. [24], the avalanche breakdown voltages of diffused silicon p-n junctions were calculated by assuming an error function diffused impurity distribution. The theoretical results were verified experimentally with samples having breakdown voltages ranging from 100 volts to 9000 volts. Good agreement was found between the experimental brea... View full abstract»

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  • Calculations of cutoff frequency, breakdown voltage, and capacitance for diffused junctions in thin epitaxial silicon layers

    Publication Year: 1966, Page(s):881 - 896
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1479 KB)

    Recent developments in high-quality silicon varactors for low-noise parametric amplifiers and high-efficiency harmonic generators necessitate the use of epitaxial silicon layers that are thinner than 10 microns, with resistivity less than 1 Ω-cm. This paper extends Breitschwerdt's recent calculations [1] to such thin epitaxial layers, and also includes the calculation of series resistance and... View full abstract»

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  • Development of large-area 200-volt planar voltage-variable capacitance diodes

    Publication Year: 1966, Page(s):896 - 900
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (611 KB)

    A research and development program resulted in fabrication of high-capacitance voltage-variable capacitance diodes for electronic tuning. Devices were fabricated by epitaxial and planar technology, with the diode prepared by diffusion into n-type silicon to approximate an abrupt junction. Objective specifications required devices with capacitance of 250 pF and 1000 pF (-8V), breakdown voltage View full abstract»

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  • UHF photoparametric amplifier

    Publication Year: 1966, Page(s):901 - 903
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (372 KB)

    Measurements on a degenerate UHF photoparametric amplifier using an optical signal modulated at 690 MHz have confirmed the 3 dB noise figure predicted by Penfield and Sawyer. The silicon photoparametric diode served as both the photodetector and varactor and was novel in several respects: the conductivity sequence was p-v-n-n+in contrast to the usual p-v-n+conventionally used... View full abstract»

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  • High-speed current limiters

    Publication Year: 1966, Page(s):904 - 907
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (468 KB)

    Current limiters based on the high-field saturation of electron-drift velocity in germanium have been fabricated by making two closely spaced ohmic contacts to a surface n-layer diffused into Ge. In operation, current flows from contact to contact through the n-layer. Current saturation begins at a voltage V_{s} = E_{s} d , where d is the contact spacing and... View full abstract»

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  • A monolithic mosaic of photon sensors for solid-state imaging applications

    Publication Year: 1966, Page(s):907 - 912
    Cited by:  Papers (18)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1061 KB)

    Monolithic silicon mosaics of photosensor elements have been developed for solid-state imaging applications. The physical structure, design considerations, and performance characteristics of these electrooptical devices as applied to image converter applications are discussed. The sensing monolith consists of a square 50 by 50 mosaic of phototransistor elements on 0.010 inch centers which are inte... View full abstract»

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  • A technique for aging the phosphor of high-resolution cathode-ray tubes with particular application to P-16

    Publication Year: 1966, Page(s):913 - 920
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (735 KB)

    An accelerated aging technique--restricted to P-16 phosphor--that measures a cathode-ray tube screen degradation with use is described. A small area of the screen is aged at high excitation densities and the light output from this area is plotted as a function of deposited charge per unit area. A pre-aged part of the screen is used as a reference level for measuring these light output levels. Meas... View full abstract»

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  • Analysis of interference photocathodes

    Publication Year: 1966, Page(s):921 - 924
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (411 KB)

    The efficiency of photodetection and guidelines for its improvement can be determined by an analysis of the photodetection process. In this paper, the effects of interference within a reflecting-translucent photocathode are studied. Equations to describe the efficiency of generating photoelectrons by optical absorption of narrow-band light are developed, analyzed, and solved numerically using the ... View full abstract»

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  • Orthogonal waves on electron beams

    Publication Year: 1966, Page(s):925 - 929
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (421 KB)

    The propagation of slow electrokinetic waves on finite electron beams which fill a conducting tunnel is discussed for modes of axial symmetry. In addition to the familiar space-charge modes, a pair of modes exists which are related to the vortex frequency ( \omega _{\upsilon } = \omega _{c} - 2\theta_{0} ). The finite magnetic field introduces a coupling bet... View full abstract»

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  • Equivalence of periodic magnetic field to uniform magnetic field in electron beam focusing

    Publication Year: 1966, Page(s):930 - 934
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (467 KB)

    The general solution of the electron trajectory equation in a periodic magnetic field is derived in the form of series expansion, assuming laminar electron flow and small perturbation. It is concluded that if the cathode is not very heavily immersed in a magnetic field, beam focusing by a periodic magnetic field would be almost equivalent to that by a uniform magnetic field except near the unstabl... View full abstract»

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  • Dynamic behavior of a long thin electron beam beyond critical perveance

    Publication Year: 1966, Page(s):934 - 942
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1063 KB)

    A discrete mathematical model is derived for the case of a thin infinite planar electron beam injected with symmetry between two parallel semi-infinite plane conductors separated by a distance d and joined by a third equipotential plane through which the beam is injected. The computer model is first shown correctly to reproduce the calculable space-asymptotic beam velocity for subcritical perveanc... View full abstract»

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  • An improved procedure for the design of periodic-permanent-magnet assemblies for traveling-wave tubes

    Publication Year: 1966, Page(s):942 - 949
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (941 KB)

    A detailed analysis of the magnetic-field configurations in periodic focusing structures and new knowledge related to the design of permanent magnets which are to be used in the presence of fields of other magnets have led to the development of a new procedure for the design of periodic-permanent-magnet (ppm) focusing structures for traveling-wave tubes. With this new procedure, the ppm focusing s... View full abstract»

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  • Experimental analysis of biased gap klystron

    Publication Year: 1966, Page(s):950 - 955
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    A commercially available multicavity klystron rated at 45 percent efficiency and equipped with external cavities was modified so that a dc potential could be applied across the interaction gaps. When the tube was carefully tuned, an efficiency of 60 percent was obtained; when an accelerating bias was applied across the penultimate gap of the tube, efficiencies of 66 percent were recorded without c... View full abstract»

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  • Improvement of traveling-wave tube efficiency through period tapering

    Publication Year: 1966, Page(s):956 - 961
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (835 KB)

    The results of an experimental program with period tapering of the slow-wave structure of a traveling-wave tube which yielded a significant improvement in the efficiency of high-power TWTs are discussed. A method is outlined whereby these results may be applied to other tubes to improve efficiency. The study utilized a novel traveling-wave tube with a helical interaction structure independent of, ... View full abstract»

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  • Measurement of dispersion and interaction impedance characteristics of slow-wave structures by resonance methods

    Publication Year: 1966, Page(s):962 - 969
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (823 KB)

    The measurement of dispersion and interaction impedance of slow-wave structures from cold tests using resonance methods is described. The theory behind the measurements is given, stressing the assumptions made. Some of the shortcomings of the simple perturbation theory of interaction impedance measurement are explained. This simple theory is then developed to take account of two complicating facto... View full abstract»

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  • Evaluation of arc damage to power triode grid wires

    Publication Year: 1966, Page(s):970 - 976
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1275 KB)

    Experiments involving aluminium foil damage tests and a simulated grid structure were performed in order to relate such tests to the minimum energy required to damage the grid structure of a type A-15186C tube. In the case of foil tests conducted in air, it was shown that the energy in a particular fault is related to the foil hole size and is in close agreement with engineering calculations and p... View full abstract»

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  • Transients in high-power modulators

    Publication Year: 1966, Page(s):977 - 984
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (948 KB)

    The physical size involved in the design and construction of high-power modulators introduces high inductance and stray capacitance in the circuit. Analysis shows that under normal operation any inductance between the energy source and the RF device, together with stray capacitance, produces damped oscillations after the "turn-on" and "turn-off" of the RF generator beam. Unfortunately, the need fo... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it