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IEEE Transactions on Electron Devices

Issue 10 • Oct. 1966

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Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1966, Page(s): c1
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    Freely Available from IEEE
  • Noise in silicon double-base diodes

    Publication Year: 1966, Page(s):683 - 687
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (423 KB)

    The power spectrum of the current fluctuations (noise) in the double-base diode has been measured experimentally and calculated theoretically. It has been found that there are two sources of noise in the double-base diode. First, there is the thermal noise of the real part of the ac admittance. The second source of noise is fluctuations in numbers of electrons and holes in the conduction band and ... View full abstract»

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  • Surface aspects of the thermal degradation of GaAs p-n junction lasers and tunnel diodes

    Publication Year: 1966, Page(s):688 - 691
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (452 KB)

    Owing to the similarity of the junction widths and doping levels in epitaxially formed GaAs lasers and conventional tunnel diodes, the gradual degradation of the latter under use might be expected to be intensified in the case of lasers operating under high duty cycle or CW conditions. It was found that the current-voltage characteristics of both the lasers and tunnel diodes underwent considerable... View full abstract»

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  • Static V-I relationships in transistors at high injection levels

    Publication Year: 1966, Page(s):692 - 700
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1043 KB)

    At high injection levels the static V-I characteristics of p-n junction devices must be modified to account for nonlinear transport mechanisms and for relationships between the injected carrier concentrations and the applied voltages which differ from the familiar low-injection relationships. These carrier-concentration-voltage relationships differ in part because of ohmic voltage drops and in par... View full abstract»

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  • Surface states at steam-grown silicon-silicon dioxide interfaces

    Publication Year: 1966, Page(s):701 - 705
    Cited by:  Papers (497)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    A method of determining the energy distribution of surface states at silicon-silicon dioxide interfaces by using low-frequency differential capacitance measurements of MOS structures is described. Low-frequency measurements make it possible to determine the silicon surface potential as a function of MOS voltage directly from the experimental data without requiring knowledge of the Si doping profil... View full abstract»

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  • Azimuthally periodic electrostatically focused electron ribbon beams

    Publication Year: 1966, Page(s):706 - 713
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (929 KB)

    Methods of enhancing transmission of ribbon-shaped electron beams undergoing circular motion in azimuthally periodic cylindrical electrostatic lenses are treated. Lens forces add to the naturally occurring curvature focusing to achieve this increase in beam transmission. Three basic configurations, differing only in the method of applying lens voltages, are treated: symmetrical focusing, deflectio... View full abstract»

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  • A decoder-driver system for magnetic-core memories using a 64-position switch tube

    Publication Year: 1966, Page(s):713 - 719
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1302 KB)

    This paper describes the design, construction, and operation of a driver-decoder subsystem using a novel 64-position switch tube. The system is designed as part of a 10 Mc/s magnetic-core memory. The switch tube is a type of cathode-ray tube (CRT) using as a target, a 64-position matrix of silicon diodes. A split-plate electrostatic deflection system is used to select one diode out of the matrix, ... View full abstract»

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  • A theoretical study of the optimal design of bar lines

    Publication Year: 1966, Page(s):720 - 726
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (640 KB)

    The dispersion characteristics of all bar-type slow-wave structures and filters can be derived in terms of a common bar admittance function. This admittance function, so far known only in infinite series form, is made amenable to direct numerical use by a transformation in the complex plane. The utilization of this result in the optimal design of bar lines is demonstrated with the example of the i... View full abstract»

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  • [Back cover]

    Publication Year: 1966, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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