IEEE Transactions on Electron Devices

Issue 7 • July 1966

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1966, Page(s): c1
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  • Space-charge waves and stability of electron diodes

    Publication Year: 1966, Page(s):539 - 544
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (519 KB)

    Use of the dc transit time as a new spatial variable and the use of RS beam current multiplied by the dc beam velocity as a new space-charge wave variable simplify the form of the equations for space-charge waves on one-dimensional accelerated electron streams. Using the simplified equations, RF impedance functions are found for electron diodes. Nyquist analysis is used to investigate the stabilit... View full abstract»

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  • Electron optical ray tracing in cathode lenses

    Publication Year: 1966, Page(s):544 - 550
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    In cathode lenses with high anode potential, as used in image tubes, each object point is imaged by a narrow ray bundle, Requirements for a ray-tracing method are 1) computation of a principal ray with allowance for total aberration, and 2) computation of other rays in the imaging bundle in a manner which is "paraxial" with respect to the principal ray; i.e., small departures from the principal ra... View full abstract»

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  • Computer experiments on electron guns

    Publication Year: 1966, Page(s):551 - 554
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (450 KB)

    Computer techniques for analyzing an axially symmetric or two-dimensional electrode system with an emitting surface can be used to obtain cathode current density distribution, beam minimum radius and its location, as well as possible electrode current interception. Here, comparison is made of available experimental data from two axially symmetric Pierce-type guns. The choice of the two axially sym... View full abstract»

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  • End losses in a magnetohydrodynamic channel: Dc channel with fluid having large magnetic reynolds number

    Publication Year: 1966, Page(s):554 - 561
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (740 KB)

    The Wiener-Hopf technique is used to solve for the electric field in a dc magnetohydrodynamic generator channel, under mixed boundary conditions. The ohmic losses are then evaluated. No restriction is made on the magnitude of the magnetic Reynolds number of the working fluid. Two problems of the semi-infinite generator section are solved, namely when the end region is at the channel entrance and w... View full abstract»

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  • Silicon nitride, a new diffusion mask

    Publication Year: 1966, Page(s):561 - 563
    Cited by:  Papers (25)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (590 KB)

    Although in the last decade silicon dioxide has been used extensively as a diffusion mask in semiconductor device fabrication, it has many limitations. It fails to mask many important diffusants such as gallium, aluminum, zinc, and oxygen. The masking properties of silicon nitride have been investigated. The results show that silicon nitride masks not only the same diffusants as silicon dioxide bu... View full abstract»

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  • Optimum bulk drift-field thicknesses in solar cells

    Publication Year: 1966, Page(s):563 - 570
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    Results of the solution of the solar cell continuity equation performed by numerical approximation show that the optimum feld thickness of radiation-resistant drift-field solar cells is between 50 and 75 micrometers. Experimental verification was obtained by fabricating cells with no field, nonoptimum field, and optimum field, and by irradiating them with 1-MeV electrons with total fluxes of 10 View full abstract»

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  • Influence of non-equilibrium carriers on the surface breakdown of diodes and MOS-structures

    Publication Year: 1966, Page(s):570 - 577
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1068 KB)

    The effect of a reduction of breakdown voltageDelta V_{B}by external illumination of an oxide protected planar n+p diode or by non-equilibrium carriers drifting in a surface channel has been investigated. The appearance of a localized area where the external light spot causes maximumDelta V_{B}is described. The influence of light wavelength and ambient has been stu... View full abstract»

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  • Silicon variable capacitance diodes with high voltage sensitivity by low temperature epitaxial growth

    Publication Year: 1966, Page(s):578 - 589
    Cited by:  Papers (19)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1249 KB)

    Low temperature epitaxial vapor growth of silicon has been successfully applied to the fabrication of variable capacitance diodes which have a hyperabrupt impurity distribution profile. These diodes exhibit a strong nonlinear behavior in capacitance voltage characteristics; for example, one of the diodes has the value of n as high as 15 in the differential capacitance formula:dC/C = -n dV/(V ... View full abstract»

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  • Gate turn-off in p-n-p-n devices

    Publication Year: 1966, Page(s):590 - 597
    Cited by:  Papers (80)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (818 KB)

    A simple two-dimensional model for gated turn-off of a p-n-p-n device is used to derive an expression relating the storage time and the turn-off gain. The observed dependence of storage time on turn-off gain fits the derived expression well for devices specially fabricated consistant with the assumptions of the model. The fall time is discussed qualitatively. View full abstract»

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  • Skip turn-on of thyristors

    Publication Year: 1966, Page(s):598 - 604
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (773 KB)

    A lateral current in an emitter layer of a thyristor (SCR) is shown to vary the lateral field in the base layers and also to change the distribution of the current density injected from the emitter to the base. A method of using lateral emitter layer currents in an SCR to increase the spreading velocity of the on-region and, at higher currents, to turn on quickly areas of the SCR remote from the g... View full abstract»

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  • Transistor degradation following second breakdown

    Publication Year: 1966, Page(s): 605
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (178 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1966, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
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