By Topic

Electron Devices, IEEE Transactions on

Issue 5 • Date May 1966

Filter Results

Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1966 , Page(s): c1
    Save to Project icon | Request Permissions | PDF file iconPDF (169 KB)  
    Freely Available from IEEE
  • Performance of magnetically compressed O-type electron beams emitted from nonshielded cathodes

    Publication Year: 1966 , Page(s): 453 - 458
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (505 KB)  

    The theory pertaining to the behavior of a cylindrical electron beam emitted from a nonshielded cathode in an axial, monotonically increasing magnetic field is experimentally verified. A convenient technique of measuring the scalloping of electron beams in sealed-off tubes by varying the beam voltage is described. Experimental results include the study of the beam compression and percentage scalloping in several configurations of increasing magnetic fields. It is shown that for such beams the percentage scalloping is fairly independent of the amount of compression. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The use of MOS structure for the design of high value resistors in monolithic integrated circuits

    Publication Year: 1966 , Page(s): 459 - 465
    Cited by:  Papers (11)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (693 KB)  

    The application of P-channel MOS structure as a resistor is studied in detail. The device operates below saturation. Effective sheet resistances of 7-25 kohms/sq. can be achieved with fair controllability. The linearity of the V-I characteristics will be determined by the biasing conditions. The temperature coefficient of such a resistor is ≈0.3-0.35 percent/°C. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A composite varactor for simultaneous high power and high efficiency harmonic generation

    Publication Year: 1966 , Page(s): 466 - 471
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (709 KB)  

    The proposal of connecting several varactor wafers in series to obtain higher breakdown voltages without loss of cutoff frequency is explored theoretically and experimentally. Calculations indicate that for a common wafer and junction geometry, the cutoff frequency of series-stacked varactors will vary approximately as VB-1/2instead of the more rapid VB-1or VB-3/2variation characteristic of a single wafer. The virtue of this scheme has been demonstrated in a 4-to-12 Gc/s multiplier using varactors consisting of 1, 2, 3, and 4 series-connected, epitaxial GaAs, surface barrier wafers. As anticipated, the varactor breakdown voltages increased directly with the number of wafers employed and the power capability as the square of that number, while efficiency decreased only slightly. A maximum power output of 1.2 watts at 12 Gc/s was obtained with 62 percent efficiency in a tripler circuit. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A compatible technique for the formation of thin tantalum film resistors on silicon integrated circuits

    Publication Year: 1966 , Page(s): 472 - 477
    Cited by:  Papers (2)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1477 KB)  

    A problem in the production of silicon integrated circuits has been yield limitation and applicability restriction due to the large variation and temperature sensitivity of diffused silicon resistors. Use of a thin-film resistive complement on silicon integrated circuits improves performance of many microcircuits heretofore made by the silicon planar process alone. The technique for thin-film on silicon integrated circuits is based on a two-metal resistor-conductor system: tantalum and aluminum. Tantalum was selected as the resistive material because it can be cathodically sputtered with ease, and a wide range of specific resistivity is available as a result of the controlled energy sputtering technique. The process involves production of the active element part of the circuit with standard silicon integrated circuit planar techniques, including contacting the cuts with deposited aluminum. The only deviation from the standard process lies in leaving some unetched SiO2surface area for resistor deposition. Tantalum is cathodically sputtered over the wafer, and delineated by standard photolithographic techniques to form resistor, conductor, and pad areas. A second layer of aluminum is then vacuum deposited over the wafer, and this is delineated to cover the pad and conductor areas of the tantalum with a high conductivity overlay. The exposed tantalum is then thermally stabilized and the final sheet resistivity adjusted by the resulting controlled sheet resistivity increase. The resulting circuits contain stable resistors with tolerance distributions of ±5 percent to ±10 percent, and TCR of -200 to -300 PPM/°C. The silicon active elements in the circuits do not degrade as a result of the thin-film resistor formation. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Probed determination of turn-on spread of large area thyristors

    Publication Year: 1966 , Page(s): 478 - 484
    Cited by:  Papers (24)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (880 KB)  

    Thyristors (SCR's) were specially constructed to permit the direct observation of the lateral spread of turn-on within the device. The effects on the spread of turn-on of the load current, basewidths, temperature, anode-cathode voltage, gate control pulse, and a large inhomogeneity were observed. The spreading velocity of the on-state and the load current are related approximately by the expression V^{n} \propto I at high load currents. The spreading velocity is higher in devices with narrower basewidths and increases with temperature. Neither the anode-cathode voltage before turn-on nor the gate control pulse affect the spreading velocity of the on-state. Measurements on end gate devices and center gate linear devices show that triggering at the center enables an equivalent area of the SCR to turn on in less time than occurs when triggering at the end. A large gap in the emitter layer will delay the spread of the on-state but will not necessarily stop the spreading. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Convergence and accuracy criteria of iteration methods for the analysis of axially symmetric and sheet beam electrode shapes with an emitting surface

    Publication Year: 1966 , Page(s): 485 - 493
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (809 KB)  

    Convergence and accuracy criteria have been determined for computer techniques analyzing an axially symmetric or two-dimensional electrode system with an emitting surface. The convergence criterion has been drawn from analytical studies of the one-dimensional model and verified numerically by the computer program for an analytically designed, axially symmetric Pierce-type electrode system. The accuracy of the computer program is illustrated with two electron gun configurations of known analytical solutions, and comparison of cathode current emission, beam minimum radius, and its location is made with experimental data of a high perveance Pierce-type gun. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Coupled-mode analysis of interactions in crossed fields

    Publication Year: 1966 , Page(s): 494 - 501
    Cited by:  Papers (9)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (788 KB)  

    The coupled-mode equations for a thin beam in a crossed-field electron tube are derived, taking into account space-charge effects by which the degeneracy of the space-charge waves is split. The equations are applied to several types of interactions between circuit waves and beam waves. The results obtained are interpreted in terms of power flow. The boundary conditions of a velocity jump in a drift region are derived. The possibility of reducing the noise figure using velocity jumps is considered. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High-performance experimental power triodes

    Publication Year: 1966 , Page(s): 502 - 509
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1704 KB)  

    The plate current, transconductance, gain-bandwidth product, and power output capabilities of small planar triodes have been increased nearly tenfold over that obtained from present day commercial tubes of comparable size and weight. In the new experimental triodes, the cathode can supply a CW current density of 1.6 A/cm2. A closely spaced, rigidly supported grid structure can provide a transconductance of 0.7 mho. The output capacitance is low enough to render a gain-bandwidth product of 22 Gc/s at 1.3 Gc/s. In this frequency range, the CW power output capability is 1 kW, and the pulsed power output capability in a 10-percent bandwidth circuit is 5 kW with 500 μs pulses at a duty factor of 0.07. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A high-power electron stick

    Publication Year: 1966 , Page(s): 510 - 511
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (250 KB)  

    First Page of the Article
    View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Measurement of the effective minority carrier lifetime in the floating region of a P-N-P-N device

    Publication Year: 1966 , Page(s): 511 - 512
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (208 KB)  

    First Page of the Article
    View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1966 , Page(s): c4
    Save to Project icon | Request Permissions | PDF file iconPDF (668 KB)  
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego