IEEE Transactions on Electron Devices

Issue 4 • April 1966

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Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1966, Page(s): c1
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    Freely Available from IEEE
  • The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors

    Publication Year: 1966, Page(s):393 - 409
    Cited by:  Papers (103)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1927 KB)

    The theory of the characteristics of the MOS transistors is developed based on a model in which both the bulk charge due to the ionized impurity in the semiconductor substrate and the difference between the electrostatic potential and the voltage drop in the channel are included. A detailed comparison of the theory is made with experimental data of gate capacitance, drain current voltage character... View full abstract»

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  • The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors

    Publication Year: 1966, Page(s):410 - 414
    Cited by:  Papers (39)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    The theory of the thermal noise due to channel conductance fluctuation is extended for insulated gate (MOS) field effect transistors with the gate voltage induced channel structure by including the bulk charge from the ionized impurities in the semiconductor substrate. In the saturation range of the drain characteristics, the theory shows thatR_{gns} g_{ms} geq 2/3, where the equality c... View full abstract»

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  • Determination of the pump modulation factor of varactor diodes under operating conditions

    Publication Year: 1966, Page(s):415 - 420
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (587 KB)

    The pump modulation factorsmof various GaAs and Si varactor diodes have been measured under operating conditions. The device used for the measurements was a phase sensitive degenerate parametric amplifier with a signal frequency of 5.85 Gc/s phase locked with a pump frequency at 11.7 Gc/s. The input impedance of the amplifier varies with relative phase of pumped elastance (θp<... View full abstract»

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  • Low-energy proton bombardment of GaAs and Si solar cells

    Publication Year: 1966, Page(s):420 - 426
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (773 KB)

    GaAs, Si n/p, and Si p/n solar cells were irradiated with 185-530 keV protons. The short-circuit current of the GaAs and the open-circuit voltage of the Si cells decreased severely as a result of bombardment. The short-circuit current of the Si cells was independent of flux at first, but it then fell rapidly. The damage produced in both the GaAs and Si cells increased with the proton energy. A mod... View full abstract»

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  • Solar thermoelectric generator for near-earth space applications

    Publication Year: 1966, Page(s):426 - 432
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (828 KB)

    The theory, design, fabrication, and testing of flat plate thermoelectric generator panels for near-earth orbits are described. These panels are capable of producing 3 watts/ft2and 15 watts/pound when operating in a near-earth orbit. The potential advantages of these solar energy converters, as compared to photovoltaic cells, are discussed and include higher radiation resistance, improv... View full abstract»

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  • Low voltage firing characteristics of a triggered vacuum gap

    Publication Year: 1966, Page(s):432 - 438
    Cited by:  Papers (46)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (901 KB)

    The triggered vacuum gap is a normally nonconducting device in which a high-current metal-vapor arc can be established by a suitable pulse of current to a triggering electrode. While this gap is well suited to switching applications at high voltage, it has properties which make it useful at low voltage as well. The operation of the triggered vacuum gap has, therefore, been studied in the range 100... View full abstract»

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  • An extended-interaction klystron: Efficiency and bandwidth

    Publication Year: 1966, Page(s):439 - 447
    Cited by:  Papers (13)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1201 KB)

    A three-cavity extended-interaction klystron, with cavities consisting of resonated sections of ring-bar structure, was tested in pulsed operation near 25 kV at 1100 Mc/s. The active length of the output resonator was variable between one and five resonant half wavelengths. The input and the intermediate cavities were tuned continuously to simulate a wide-band stagger-tuned bunching section. The d... View full abstract»

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  • [Back cover]

    Publication Year: 1966, Page(s): c4
    Cited by:  Papers (1)
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Politecnico di Torino,
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