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IEEE Transactions on Electron Devices

Issue 1 • Jan. 1966

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Displaying Results 1 - 25 of 46
  • [Front cover and table of contents]

    Publication Year: 1966, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1966, Page(s): 1
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    Freely Available from IEEE
  • Introduction

    Publication Year: 1966, Page(s):2 - 3
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    Freely Available from IEEE
  • Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductors

    Publication Year: 1966, Page(s):4 - 21
    Cited by:  Papers (287)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1924 KB)

    A theory of negative-conductance amplification and of Gunn-effect oscillation in good agreement with experimental observations is developed for "two-valley" semiconductors such as GaAs and InP. The theory is based upon a conduction-band model in which the relative populations of two valleys of vastly different mobility are determined by the average electron temperature, the latter being described ... View full abstract»

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  • High-field distribution function in GaAs

    Publication Year: 1966, Page(s):22 - 27
    Cited by:  Papers (139)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (636 KB)

    Use of the drifted Maxwellian distribution is shown to be unjustified for GaAs samples in which the Gunn effect is usually observed, because the carrier concentration is much too low for electron-electron collisions to predominate. It is pointed out that solution of the Boltzmann equation is considerably simpler at fields high enough so that the average electron energy exceeds several times the op... View full abstract»

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  • Nonlinear space-charge domain dynamics in a semiconductor with negative differential mobility

    Publication Year: 1966, Page(s):27 - 40
    Cited by:  Papers (114)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1350 KB)

    On a semiphenomenological level, the explanation of the Gunn effect is one in terms of a time-independent, negative differential, bulk conductivity. This mechanism is based on the conduction-band structure of GaAs, which provides for two kinds of electrons, light and heavy ones. Light electrons dominate at low fields, heavy ones at high fields. Since the mobility of the heavy electrons is much low... View full abstract»

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  • The inhibition of negative resistance dipole waves and domains in n-GaAs

    Publication Year: 1966, Page(s):41 - 43
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (271 KB)

    Expressions describing the growth and propagation of infinitesimal space-charge waves in the presence of a differential negative resistance are derived, and conditions for the inhibition of dipole waves and domains inn-GaAs of resistivity greater than 10Ω-cm at 300°K are obtained. Thermoelectric effects are estimated and found to be small for carrier densities much less than 1... View full abstract»

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  • Linear, or "Small-signal," theory for the Gunn effect

    Publication Year: 1966, Page(s):44 - 52
    Cited by:  Papers (26)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (868 KB)

    A model wherein the density of free carriers in the conduction band of a semiconductor is dependent on the electric field and decreases at high fields is considered. The growth and phase velocity of an RF wave of small amplitude which propagates through the medium are evaluated. From these properties the threshold electric field and the frequency tuning characteristics vs. electric field for an os... View full abstract»

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  • Current oscillations by coherent excitation of optical phonons

    Publication Year: 1966, Page(s):53 - 57
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (498 KB)

    The theory of the coherent excitation of optical phonons in polar semiconductors is developed by use of the Boltzmann equations in which the collective behavior of carriers is taken into account. The linearized theory gives the critical condition for which the coherent emission of optical phonons exceeds the total damping of the system. Current and phonon wave-amplitude saturations due to non-line... View full abstract»

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  • Streaming instabilities in solids and the role of collisions

    Publication Year: 1966, Page(s):57 - 63
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (755 KB)

    An analysis is made of several solid-state amplifiers using streaming carriers, and the role played by collisions is discussed. In the case of an electron stream interacting with a TM wave there are found to be no "collision-induced" instabilities, in contrast to various statements in the literature; in the case of TEM waves collisions can induce instabilities under proper conditions. For TM-waves... View full abstract»

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  • Effect of variation of energy minima separation on Gunn oscillations

    Publication Year: 1966, Page(s):63 - 67
    Cited by:  Papers (20)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (559 KB)

    The threshold field for Gunn Oscillations depends on the separation in energy of high- and low-mobility conduction-band minima. In GaAs this separation can be reduced by hydrostatic pressure, by uniaxial stress, or by the addition of phosphorus to form GaAsxP1-x. Experiments on the effect of uniaxial stress are described, and the results are compared with those previously rep... View full abstract»

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  • Some properties of the moving high-field domain in Gunn effect devices

    Publication Year: 1966, Page(s):68 - 79
    Cited by:  Papers (78)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2387 KB)

    Some experimentally observed characteristics of the high-field domain in long samples (0.1 to 0.25 cm) of GaAs are described. Accurate determinations of domain velocity and amplitude in a number of devices have been made using a surface potential probe. Although the probe resolution was insufficient to observe the domain widening as it supports more voltage, as is predicted by the Ridley model, it... View full abstract»

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  • The Gunn effect in polar semiconductors

    Publication Year: 1966, Page(s):79 - 87
    Cited by:  Papers (57)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1118 KB)

    The main features of the Gunn effect can be accounted for by the transferred electron model of Ridley and Watkins, which predicts a bulk differential negative resistance and subsequent domain formation if electrons can be transferred sufficiently rapidly from the lowest conduction-band minimum to lower-mobility subsidiary minima. Experimental results forn-GaAs in verification of such a ... View full abstract»

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  • Microwave oscillations in high-resistivity GaAs

    Publication Year: 1966, Page(s):88 - 94
    Cited by:  Papers (25)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (794 KB)

    It has been found that Gunn-effect oscillations in high-resistivity GaAs cease when the product of the conduction electron density and the sample length drops below 1011cm-2as predicted by theory. The samples investigated exhibited impact ionization of a deep donor level lying 0.41 eV below the conduction band edge when subjected to an applied electric field equal to the Gunn... View full abstract»

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  • Microwave phenomena in bulk GaAs

    Publication Year: 1966, Page(s):94 - 105
    Cited by:  Papers (58)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1368 KB)

    CW microwave oscillations were generated at room temperature by usingn-GaAs with a carrier concentration 1013- 1014per cc. Fundamental frequencies between 1 - 10 kMc were excited, and harmonic signals up to 21 kMc were detected. The maximum power output and efficiency on CW basis were 56 mW and 5.2 percent, respectively, at 2 - 3 kMc. A study was made of harmonic c... View full abstract»

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  • High-peak-power gallium arsenide oscillators

    Publication Year: 1966, Page(s):105 - 110
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (697 KB)

    The Gunn effect appears to be the first semiconductor phenomenon capable of generating high peak power at microwave frequencies. This paper describes some preliminary experimental work in which gallium arsenide oscillators were made and operated in the range from 725 to 2000 Mc/s. Two device fabricating techniques and two circuit configurations have been found useful. Individual devices can be mad... View full abstract»

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  • Microwave amplification in a GaAs bulk semiconductor

    Publication Year: 1966, Page(s):110 - 114
    Cited by:  Papers (50)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (526 KB)

    Continuous linear microwave amplification has been obtained usingn-type GaAs at room temperature. Amplification of signals in the 2 to 10 Gc/s range occurred when a dc field applied across semiconductor wafers mounted in a conventional reflection type amplifier circuit exceeded about 3100 volts/cm. Ohmic contacts were applied to wafers 125 µ square and 40 to 120 µ thick. The r... View full abstract»

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  • Microwave oscillations in epitaxial layers of GaAs

    Publication Year: 1966, Page(s):114 - 117
    Cited by:  Papers (8)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (473 KB)

    Microwave oscillations of the type reported by Gunn have been observed in samples prepared from epitaxial layers of gallium arsenide. Descriptions of sample preparation and measuring techniques are included. The frequency of oscillation ranged from 7 to 14 GHz. The samples, which were prepared from 16.5 to 25µ thick layers, had cross sections that were 0.25 mm and 0.5 mm square. Peak output p... View full abstract»

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  • A current-controlled negative-resistance effect in indium antimonide

    Publication Year: 1966, Page(s):117 - 121
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (565 KB)

    A thin wafer of P-InSb exhibits a current-controlled negative resistance between nonsymmetrical ohmic contacts on opposite sides of the wafer. The small contact on one side of the wafer is made positive relative to the large contact on the other side. Most effective samples had small contact diameters one to four times the slab thickness. The negative resistance was present up to a temperature of ... View full abstract»

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  • Current oscillations and microwave emission in indium antimonide

    Publication Year: 1966, Page(s):121 - 131
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1212 KB)

    The oscillatory properties of indium antimonide subjected to comparatively high applied parallel electric and magnetic fields at 77°K have been studied. In particular, the low-frequency oscillations in the current have been characterized by an empirical equivalent circuit. This circuit has been used to help clarify the relationship between these current oscillations and the microwave emission... View full abstract»

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  • The spectrum of microwave radiation from InSb

    Publication Year: 1966, Page(s):132 - 136
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (582 KB)

    The frequency spectrum of the microwave radiation emitted from InSb in the presence of applied electric and magnetic fields at 77°K was observed using a spectrum analyzer. In the frequency region from 7 to 26 Gc/s the spectrum showed oscillatory behavior with a period of 2.2 Gc/s, with the average value decreasing with increasing frequency. Such a structure could be due to a series of harmoni... View full abstract»

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  • Negative resistance in p-n junctions under avalanche breakdown conditions, part I

    Publication Year: 1966, Page(s):137 - 143
    Cited by:  Papers (149)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (661 KB)

    A one-dimensional, small-signal analysis of the space-charge region of a p-n junction in which avalanche occurs uniformly is presented. The impedance is found to have a negative real part. The impedance is Well represented by a parallel connection of the depletion layer capacitance, an inductance, and a negative resistance. The admittance of the latter two is proportional to the bias current. The ... View full abstract»

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  • Negative resistance in p-n junctions under avalanche breakdown conditions, part II

    Publication Year: 1966, Page(s):143 - 151
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    The small-signal impedance of the space-charge region of p-n junctions under avalanche breakdown conditions is calculated using reasonably realistic dependences of electron and hole ionization rates and drift velocities upon electric field. Two structures are analyzed: one is p+νn+structure which has a fairly uniform distribution of avalanche multiplication, and the othe... View full abstract»

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  • High-frequency oscillations of p++-n+-n-n++avalanche diodes below the transit-time cutoff

    Publication Year: 1966, Page(s):151 - 158
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (723 KB)

    According to Read, n++-P+-i-P++diodes should oscillate at special high frequencies determined by carrier transit time in the space-charge layer. Oscillations not affected by transit time were observed with p++-n+- n-n++silicon diodes. The corresponding current-voltage characteristic revealed a negative resistance setting in at a cri... View full abstract»

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  • Noise theory for the read type avalanche diode

    Publication Year: 1966, Page(s):158 - 163
    Cited by:  Papers (83)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (591 KB)

    An analysis is presented for the noise current spectrum of an avalanche diode under assumed conditions of ideal uniform avalanche behavior in a zone which is thin compared with the total high-field depletion zone. The result is applied to the Read diode amplifier. For a typical set of operating parameters, the theory predicts a noise figure on the order of 40 dB. Depending upon particular device p... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it