IEEE Transactions on Electron Devices

Issue 12 • Dec. 1965

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Displaying Results 1 - 8 of 8
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
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  • Small signal properties of field effect devices

    Publication Year: 1965, Page(s):605 - 618
    Cited by:  Papers (28)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1256 KB)

    The small signal properties of field effect devices are treated analytically. The analysis is based upon an active, distributed transmission line analogy to the conductive channel of field effect devices. Within the limitations of the gradual channel approximation, a general analysis is presented which is applicable to both junction and MOS field effect devices. Equivalent circuits are obtained wh... View full abstract»

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  • The origin of channel currents associated with P+regions in silicon

    Publication Year: 1965, Page(s):619 - 626
    Cited by:  Papers (23)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (888 KB)

    The mechanism by which very large channel currents can result in P+N junctions or in PNP transistors having annular P+diffused channel-stop regions was studied in detail using experimental structures whose oxides were intentionally contaminated with sodium ions. It is shown that the onset of channel current flow corresponds quantitatively to the formation of an inversion laye... View full abstract»

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  • Switching waveform prediction of a simple transistor inverter circuit

    Publication Year: 1965, Page(s):626 - 631
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (480 KB)

    This paper presents a brief review of charge control equations for base step current drive transistor switching in the grounded emitter configuration. On the basis of these equations, transient switching waveforms are calculated by a simple piecewise analysis procedure. A switching locus on the ωTvs. ICcurve for the determination of the transient waveforms is introduced.... View full abstract»

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  • A solid-state matrix-addressed display

    Publication Year: 1965, Page(s):632 - 637
    Cited by:  Papers (2)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (544 KB)

    Cadmium selenide (CdSe) switches have been devised to control the luminous emittance of electroluminescent cells in a solid-state display. The technique employed makes use of the hysteresis in CdSe to change the resistance of the material to some low value when a switching voltage is applied. In its low-resistance state, the CdSe switch can energize an electroluminescent cell connected in series w... View full abstract»

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  • Microcircuit photomasks from automatic techniques

    Publication Year: 1965, Page(s):638 - 642
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (952 KB)

    A new method for rapidly constructing photographic masks which are required in the fabrication of microelectronic circuits is described. The method employs an optical projection technique to obtain a precisely defined pencil of light which is used for "writing" on a high resolution photographic plate. The photomask geometry is exposed in a raster-like format by accurate servo-controlled translatio... View full abstract»

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  • GaAs—Si photon-activated switch

    Publication Year: 1965, Page(s):643 - 649
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (584 KB)

    A light-activated low-level switch (LAS) has been developed for multiplexing applications. The switch consists of an electroluminescent GaAs p-n diode and a double-emitter silicon transistor. (Both NPN and PNP units have been made.) The two, light emitter and detector, are coupled optically. The switch is a substantial improvement over existing switching devices used in multiplexers. A general des... View full abstract»

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  • [Back cover]

    Publication Year: 1965, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it