IEEE Transactions on Electron Devices

Issue 11 • Nov. 1965

Filter Results

Displaying Results 1 - 6 of 6
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
    Request permission for commercial reuse | |PDF file iconPDF (134 KB)
    Freely Available from IEEE
  • Tunable high-pass filter characteristics of a special MOS transistor

    Publication Year: 1965, Page(s):581 - 589
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (920 KB)

    An especially designed epitaxial, metal-oxide-semiconductor transistor has been employed in a novel mode of operation in which the inherent characteristics of the device provide a high-pass filter-type response with insertion gain in the pass band. The low-frequency cutoff property is due to a nonequilibrium phenomenon controlled by the minority carrier generation rate in the channel. The cutoff f... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A metal-insulator-piezoelectric semiconductor electromechanical transducer

    Publication Year: 1965, Page(s):590 - 595
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (736 KB)

    A deposited metal-insulator-piezoelectric-semiconductor (MIPS) transistor can be used as an electromechanical transducer, because of the sensitivity of the power-gain mechanism in a surface field-effect device to fixed charge in the channel. Close correspondence has been obtained between the theory of this effect and experimental observations on deposited CdS MIPS devices. The transducer action de... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Nonlinear distortions and their cancellation in transistors

    Publication Year: 1965, Page(s):595 - 599
    Cited by:  Papers (16)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (496 KB)

    A linear two-port network model of the intrinsic transistor, which accounts for the nonlinear effects at the emitter-base junction, is developed in this paper. From this model nonlinear distortions are calculated and their variations with frequency and operating point are accounted for. With extrinsic parameters incorporated into this model it is shown how third-order distortion cancellation resul... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • On the gain mechanism of acoustic wave amplifiers in terms of coupled waves

    Publication Year: 1965, Page(s):599 - 600
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (224 KB)

    First Page of the Article
    View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1965, Page(s): c4
    Request permission for commercial reuse | |PDF file iconPDF (385 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it