IEEE Transactions on Electron Devices

Issue 10 • Oct. 1965

Filter Results

Displaying Results 1 - 10 of 10
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (145 KB)
    Freely Available from IEEE
  • A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device

    Publication Year: 1965, Page(s):513 - 531
    Cited by:  Papers (50)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1264 KB)

    A distributed model for a junction transistor has been analyzed to include both dc and ac biasing effects in the active base region, with particular emphasis on a small-geometry diffused base planar transistor. For such devices with extremely narrow base width, dc biasing effects cannot be neglected. At high frequencies, the response of these devices is greatly modified by ac biasing effects which... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Characteristics of a GaAs spontaneous infrared source with 40 percent efficiency

    Publication Year: 1965, Page(s):531 - 535
    Cited by:  Papers (41)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    The external quantum efficiency of a forward-biased GaAs p-n junction device selected for high efficiency measures 40.5, 32, and 7.3 percent at 20, 77, and 295°K, respectively. The optical exit path is through bulk material doped to a 1017donors/cm2level. The infrared emission is measured directly with a silicon solar cell. The effective transmissivity of the GaAs bulk d... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Coupled-mode description of space-charge waves on nonuniform beams

    Publication Year: 1965, Page(s):536 - 547
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB)

    Coupled-mode theory is employed to describe space-charge wave propagation on an electron beam drifting in a non-uniform region. The nonuniformity may arise in several ways. These include a potential variation, a beam-radius variation, or a drift-region-radius variation. To demonstrate the utility of this method of description, closed-form solutions are obtained for several particular variations of... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A coupled-monotron analysis of band-edge oscillations in high-power traveling-wave tubes

    Publication Year: 1965, Page(s):547 - 556
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1090 KB)

    A theoretical analysis of the interaction of an electron beam with a coupled-cavity structure near a band-edge frequency is presented. The analysis utilizes the resonant modes of the individual cavities in a way such that the details of the electronic interaction within each distinct cavity are identical to those of the monotron theory, but the coupling between adjacent cavities is taken into acco... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Automatic positioning of device electrodes using the scanning electron microscope

    Publication Year: 1965, Page(s):556 - 563
    Cited by:  Papers (13)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1208 KB)

    In current technology, the edge definition that can be achieved by the photoresist process is approximately ten times sharper than the registration accuracy that can be maintained over a workpiece of any reasonable size. A description is presented of an attempt to improve registration through feedback from the workpiece itself; the servo signal is generated by the photoresist-exposing radiation, a... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Resistance network analog simulation of the magnetic field produced by a solenoid

    Publication Year: 1965, Page(s):564 - 573
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (984 KB)

    A method is proposed for the analog simulation of the magnetic field produced by a solenoid with an arbitrary axially symmetric shape, having magnetic pole pieces also with arbitrary axially symmetric shapes. The ordinary resistance network analog for solving axially symmetric Poisson's problems is used in this method. The simulated magnetic field configurations for some specific cases are compare... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Correction [to "IEEE standard test procedure for semiconductor diodes"]

    Publication Year: 1965, Page(s): 573
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (74 KB)

    Summary form only given, as follows. Attention has been called to the incorrect Committee listing in the "IEEE Standard Test Procedure for Semiconductor Diodes," which appeared on pages 398-402 of the August, 1964, issue of these Transactions. The second paragraph of the 'ACKNOWLEDGMENT' should read as follows. "This publication was prepared by the IEEE Task Group 28.4.10 composed of: B. Jacobs, C... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Depletion capacitance of four-terminal field-effect transistors

    Publication Year: 1965, Page(s): 574
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    First Page of the Article
    View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1965, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (556 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it