IEEE Transactions on Electron Devices

Issue 8 • Aug. 1965

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Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
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  • Velocity tapering in microwave amplifiers

    Publication Year: 1965, Page(s):441 - 447
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    The low-to-moderate RF conversion efficiencies characteristic of kinetic energy conversion devices may be enhanced by appropriately tapering the RF circuit phase velocity. The nonlinear interaction equations have been solved in closed form for an HKB (hard-kernel-bunch) model to obtain an optimum taper form. Several velocity taper forms have been investigated in experimental amplifiers and the pow... View full abstract»

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  • On the effects of boundary conditions at the cathode on the equations of steady space-charge flow

    Publication Year: 1965, Page(s):447 - 449
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (291 KB)

    The steady, zero-temperature, space-charge flow problem has a unique solution if formulated in the differential equation form. However, if the differential equations are approximated by a difference equation formulation, it is shown that the solution is no longer unique. The effect is demonstrated by the example of the Langmuir planar diode. It is proved theoretically for the planar diode, and dem... View full abstract»

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  • Electron images of vidicon cathodes

    Publication Year: 1965, Page(s):449 - 457
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3224 KB)

    Excessive patchiness of the emission from the oxide-coated cathodes used in cathode-ray tubes, camera tubes and traveling-wave tubes can have adverse effects on their performance or useful life. There is a simple technique for forming an electron image of a CRT cathode directly on the view screen. This technique, which has been known for more than 30 years, may be used to show patchiness when it e... View full abstract»

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  • Evaluation of voltage dependent series resistance of epitaxial varactor diodes at microwave frequencies

    Publication Year: 1965, Page(s):457 - 470
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1392 KB)

    The series resistance of a high-quality varactor diode is primarily determined by the resistance of the semiconductor material close to the junction. With increasing reverse bias, the width of the space-charge region becomes greater, and the series resistance decreases. Theoretical models of graded and step junctions have been assumed, and calculations have been made of the series resistance as a ... View full abstract»

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  • Effect of thickness on short-circuit current of silicon solar cells

    Publication Year: 1965, Page(s):470 - 474
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (668 KB)

    It has been found that the parameters of present high performanceN/Psilicon solar cells are such that even small reductions in the thickness of the cells result in noticeable decreases of the short-circuit current due to lower collection efficiency at long wavelengths. Theoretical and experimental results of an investigation into the change of short-circuit current as function of thickn... View full abstract»

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  • A simple method for determining the impurity distribution near a p-n junction

    Publication Year: 1965, Page(s):475 - 477
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (341 KB)

    It is well known that the form of the dependence upon bias voltage of the incremental space-charge layer capacitance of an asymmetrically-dopedp-njunction depends (in a rather complicated way) upon the concentration profile of the impurity charge on the high-resistivity side. It is shown in this paper that this impurity profile is related, in a very simple way, to the dependence of the ... View full abstract»

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  • Correction of deflection-aberrations by analog computer

    Publication Year: 1965, Page(s):478 - 484
    Cited by:  Papers (6)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1284 KB)

    For wide-angle deflection (±25°) of microspot tubes (spot size-8 microns), dynamic correction of focal length (DCF) alone is no longer capable of conserving resolution. It is found, however, that complete recovery of ultra-high resolution (3000 lines per inch) is practical by adding dynamic correction of astigmatism (DCA) to DCF. The laws of error distribution on the tube face are found ... View full abstract»

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  • [Back cover]

    Publication Year: 1965, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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