IEEE Transactions on Electron Devices

Issue 5 • May 1965

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
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  • Nonlinear coupling with silicon tunnel junctions in integrated logic

    Publication Year: 1965, Page(s):237 - 241
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (552 KB)

    Most of the logic schemes that are amenable to integrated semiconductor construction utilize resistances to couple transistor stages to a power supply and to other stages. It is shown that the coupling functions ideally require nonlinear rather than linear current-voltage characteristics. Tunnel junctions can provide very attractive nonlinear characteristics for coupling purposes, and this is the ... View full abstract»

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  • Analysis of GaAs tunnel diode oscillators

    Publication Year: 1965, Page(s):242 - 245
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    GaAs tunnel diode oscillators are analyzed using a tenth-order power series approximation of the current-voltage characteristics of the diodes. The analysis yields significantly better agreement between measured and calculated power outputs than previous analyses which were based on a cubic approximation of the current-voltage characteristics. View full abstract»

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  • Four-terminal field-effect transistors

    Publication Year: 1965, Page(s):246 - 247
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (176 KB)

    A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor. Curves are presented showing variations of normalized transconductance with applied gate-source EMF. View full abstract»

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  • Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

    Publication Year: 1965, Page(s):248 - 254
    Cited by:  Papers (57)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (776 KB)

    Extensive measurements of electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces were performed using the field effect conductance technique. It was found that both electron and hole mobilities are practically constant and approximately equal to one half of their respective bulk values up to a surface field of about 1.5 × 105volts/cm, corresponding ... View full abstract»

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  • A comparison of radiation tolerance of field effect and bipolar transistors

    Publication Year: 1965, Page(s):254 - 258
    Cited by:  Papers (5)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    An analytical comparison of the radiation tolerance of conventional silicon field effect transistors and of silicon bipolar transistors has been performed. The channel or base thickness has been used as the respective critical variable, since it measures the degree of difficulty of device fabrication. For field effect transistors, the pinch-off voltage has been used as a free parameter. Based on r... View full abstract»

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  • Rotational-beam power theorems

    Publication Year: 1965, Page(s):258 - 263
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (568 KB)

    General power theorems for rotational electron beams and some moving plasmas are derived by using three sets of variables: Clebsch variables, Lin's variables, and polarization variables. In each case, the most general power theorem, with unspecified linear operators, is given and for the polarization-variable case this is specialized to some cases of interest. Unfortunately, the physical interpret... View full abstract»

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  • Limiting stable currents in bounded electron and ion streams

    Publication Year: 1965, Page(s):264 - 272
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (888 KB)

    The classical static analysis of the infinite planar diode has been extended to include the effects of finite transverse beam size. Simple expressions have been found for the increase in maximum stable current density over that of an infinite stream for finite cylindrical and strip streams flowing between plates of infinite diodes. The results are also given in terms of stream perveance. The effec... View full abstract»

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  • The optimum grid to cathode spacing in planar triodes

    Publication Year: 1965, Page(s):273 - 280
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    The behavior of planar triodes with close grid-to-cathode spacings is investigated theoretically and experimentally. Special attention is paid to island formation dimensional variation initial electron velocity and cathode coating resistance. A formula is derived for the optimum grid-to-cathode spacing which yields maximum transconductance, maximum power gain-band product and minimum noise figure. View full abstract»

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  • An analysis of TM11mode beam blowup in linear electron accelerators

    Publication Year: 1965, Page(s):281 - 288
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    The "beam-blowup" phenomenon associated with traveling-wave linear electron accelerators is examined. An equation describing the interaction between the electron beam and the TM11backward-wave mode is developed, and solutions of the equation presented. Computed blowup times as a function of beam current are compared, and show good agreement, with experimental results obtained elsewhere.... View full abstract»

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  • The backward-wave converter, an electronically swept receiver

    Publication Year: 1965, Page(s):289 - 295
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    The backward-wave converter is a hybrid device that combines the essential elements of an electronically swept receiver front end in a single vacuum envelope. The device directly converts an RF signal to an IF signal with the mixing processes taking place in an electron beam. The tuning is completely electronic, and octave frequency coverage has been achieved. Compared to the conventional crystal ... View full abstract»

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  • Dip testing, effect on life of tube

    Publication Year: 1965, Page(s): 296
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (128 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1965, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
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