IEEE Transactions on Electron Devices

Issue 4 • April 1965

Filter Results

Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1965, Page(s): c1
    Request permission for commercial reuse | |PDF file iconPDF (151 KB)
    Freely Available from IEEE
  • Parasitic effects in microelectronic circuits

    Publication Year: 1965, Page(s):161 - 167
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (736 KB)

    Since the advent of silicon planar technology, the integrated, monolithic, semiconductor circuit has become a reality. As a result, the use of microelectronic circuits manufactured on a monolithic chip has been rapidly increasing for the past few years. However, the adoption or conversion of standard discrete device semiconductor circuits to the monolithic form has introduced additional parasitic ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The effects of oxide traps on the MOS capacitance

    Publication Year: 1965, Page(s):167 - 178
    Cited by:  Papers (327)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1216 KB)

    The trapping of electrons and holes at a semiconductor surface by traps located in the oxide adjacent to the semiconductor has been considered. It is shown that the effective capture cross section of an oxide trap viewed by a carrier at the semiconductor surface is reduced by a factor which increases exponentially with the distance the trap is located from the interface. A pseudo-Fermi function in... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Limitations of the MOS capacitance method for the determination of semiconductor surface properties

    Publication Year: 1965, Page(s):179 - 193
    Cited by:  Papers (111)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1688 KB)

    For the use of the MOS capacitance method in the study of surface properties, various approximations and assumptions, of a purely conceptual and of an experimental nature, are usually made. These are not always justified. In this paper the applicability of this capacitance method for surface studies is examined critically. It is shown that this method is limited in its applicability and accuracy, ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Breakdown voltages of germanium plane-cylindrical junctions

    Publication Year: 1965, Page(s):193 - 198
    Cited by:  Papers (8)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (640 KB)

    The breakdown voltages of planar n-p diodes in germanium have been found to be consistently lower than those on mesa diodes having the same impurity gradient and junction depth. The measurements were made on circular diodes having a radius of ten mils and junction depths ranging from three-quarter micron to one micron. The lowering of the breakdown voltage in the planar diodes is accounted for by ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Controlled noise generation with avalanche diodes I. Low pulse rate design

    Publication Year: 1965, Page(s):198 - 207
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1160 KB)

    The generation of random noise with uniform avalanche diodes is investigated. A special avalanche noise diode is designed in which the pulse rate is determined by internal field emission and circuit constants, resulting in a small and predictable temperature dependence of the noise output. The spectral noise distribution is calculated for the case of a clipped sawtooth wave with small random fluct... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The growth of peak velocity, noise, and signals in O-type electron beams

    Publication Year: 1965, Page(s):208 - 216
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1208 KB)

    A new phenomenon, the growth of peak velocity of an electron beam originating from a shielded gun, has been investigated. Its behavior with distance, magnetic field, and phasing between beam voltage pulse and heater current zero is presented. This phenomenon bears a general but not a detailed resemblance to the noise growth observed by previous investigators. The noise growth phenomenon has been r... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Investigation of improved magnetic materials for PPM-focused low-noise traveling-wave tubes

    Publication Year: 1965, Page(s):217 - 224
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1352 KB)

    Low-noise traveling-wave tubes focused by a combination of a uniform field in the gun region and periodic field (PPM field) over the remainder of the tube usually have a noise figure from 3 to 5 dB higher than those of tubes focused by a uniform magnetic field (PM field). This paper describes how this disadvantage of higher noise has been largely overcome as a result of improvements in magnetic ma... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Calculation of the heat-affected zone during pulsed electron-beam machining

    Publication Year: 1965, Page(s):224 - 231
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (856 KB)

    The heating effect of a pulsed electron-beam incident onto a solid target is dependent on the beam parameters, on the electron penetration, and on heat conduction effects. The attainable beam current density is limited jointly by the electron-optical brightness condition and by the spherical aberration of the focussing lens. To calculate the temperature rise that exists at the end of the electron ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Correction [to "High speed photodiode signal enhancement at avalanche breakdown voltage"]

    Publication Year: 1965, Page(s): 231
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (136 KB)

    Kenneth M. Johnson, author of the paper, "High Speed Photodiode Signal Enhancement at Avalanche Breakdown Voltage," which appeared on pages 55-63 of the February, 1965, issue of these Transactions has called the following to the attention of the Editor. Acknowledgment should have been included of the support given by the U.S. Army Electronics Laboratory, under Contract No. DA-36-039-AMC-O3250(E). View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Mask translation technology

    Publication Year: 1965, Page(s): 232
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (336 KB)

    First Page of the Article
    View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1965, Page(s): c4
    Request permission for commercial reuse | |PDF file iconPDF (578 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it